BSP135 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 600 V R DS(on),max 60 Ω I DSS,min 0.02 A • dv /dt rated SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP135 SOT-223 Q62702-S655 E6327: 1000 pcs/reel BSP135 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.12 T A=70 °C 0.10 0.48 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.12 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 Value 1.8 W -55 ... 150 °C 55/150/56 page 1 2003-04-03 BSP135 Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint - - 115 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=3 V, I D=94 µA -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=600 V, V GS=-3 V, T j=25 °C - - 0.1 V DS=600 V, V GS=-3 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA On-state drain current I DSS V GS=0 V, V DS=10 V 20 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.01A - 30 60 V GS=10 V, I D=0.12 A - 25 45 |V DS|>2|I D|R DS(on)max, I D=0.1 A 0.08 0.16 - Transconductance g fs Ω S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2003-04-03 BSP135 Parameter Values Symbol Conditions Unit min. typ. max. - 98 146 - 8.5 13 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.4 5.1 Turn-on delay time t d(on) - 5.4 8.1 Rise time tr - 5.6 8.4 Turn-off delay time t d(off) - 28 42 Fall time tf - 182 273 Gate to source charge Q gs - 0.24 0.36 Gate to drain charge Q gd - 2.0 3.0 Gate charge total Qg - 3.7 4.9 Gate plateau voltage V plateau - 0.20 - V - - 0.12 A - - 0.48 - 0.78 1.2 V - 87 130 ns - 70 104 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=0.1 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.0 T A=25 °C V GS=-3 V, I F=0.12 A, T j=25 °C V R=300 V, I F=0.1 A, di F/dt =100 A/µs page 3 2003-04-03 BSP135 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 0.15 1.5 I D [A] P tot [W] 0.1 1 0.05 0.5 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 1 100 10 µs limited by on-state resistance 100 µs 0.5 0.1 Z thJA [K/W] I D [A] 1 ms 10 ms 0.2 10 0.1 0.05 0.01 single pulse 0.02 DC 0.01 0.001 1 1 10 100 1000 10 0 -3 100-2 100-1 10 01 10110 10 2 100 t p [s] V DS [V] Rev. 1.0 010-4 page 4 2003-04-03 BSP135 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 100 0.25 -0.2 V 1V 10 V 0.2 V 0V -0.1 V 0.5 V 0.1 V 80 0.2 0.5 V R DS(on) [Ω] I D [A] 0.15 0.2 V 0.1 V 0.1 60 40 0V 1V -0.1 V -0.2 V 10 V 20 0.05 0 0 0 2 4 6 8 0 10 0.04 0.08 V DS [V] 0.12 0.16 0.2 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.25 0.2 0.2 0.15 I D [A] g fs [S] 0.15 0.1 0.1 0.05 0.05 0 0 -2 -1 0 1 V GS [V] Rev. 1.0 0.0 0.0 0.1 0.1 I D [A] page 5 2003-04-03 BSP135 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.01 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=94 µA parameter: I D 160 0 140 -0.5 120 -1 V GS(th) [V] R DS(on) [Ω] 100 80 98 % 98 % typ -1.5 60 -2 2% 40 typ -2.5 20 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. Capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=-3 V; f =1 MHz I F=f(V SD) parameter: T j 10 1000 100 150 °C 1 Ciss 25 °C I F [A] C [pF] 150 °C, 98 % 10 25 °C, 98 % 0.1 Coss Crss 0.01 1 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0 0.5 1 1.5 V SD [V] page 6 2003-04-03 BSP135 14 Typ. gate charge 15 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 8 700 0.5 VDS(max) 0.2 VDS(max) 6 660 0.8 VDS(max) V BR(DSS) [V] V GS [V] 4 2 620 580 0 540 -2 -4 500 0 1 2 3 4 5 Q gate [nC] Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] page 7 2003-04-03 BSP135 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.0 page 8 2003-04-03 BSP135 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2003-04-03