BSC026N02KS G OptiMOS™2 Power-Transistor Product Summary Features V DS 20 V R DS(on),max 2.6 mΩ ID 100 A • For fast switching converters and sync. rectification 1) • Qualified according to JEDEC for target applications • Super Logic level 2.5V rated; N-channel PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC026N02KS G PG-TDSON-8 026N02KS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=4.5 V, T C=25 °C 100 V GS=4.5 V, T C=100 °C 85 V GS=2.5 V, T C=25 °C 100 V GS=2.5 V, T C=100 °C 65 V GS=4.5 V, T A=25 °C, R thJA=45 K/W2) I D,pulse T C=25 °C3) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 550 Reverse diode dv /dt dv /dt I D=50 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Rev.1.06 A 25 Pulsed drain current 1) Unit ±12 mJ kV/µs V J-STD20 and JESD22 page 1 2010-07-01 BSC026N02KS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 78 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.8 R thJA=45 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1.6 Thermal characteristics Thermal resistance, junction - case R thJC bottom top SMD version, device on PCB R thJA K/W 18 minimal footprint - - 62 6 cm2 cooling area2) - - 45 20 - - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=200 µA 0.7 0.95 1.2 Zero gate voltage drain current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=125 °C - - 100 V µA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=50 A - 3.4 4.5 mΩ V GS=4.5 V, I D=50 A - 2.1 2.6 - 1.5 - Ω 95 190 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev.1.06 See figure 3 page 2 2010-07-01 BSC026N02KS G Parameter Values Symbol Conditions Unit min. typ. max. - 5900 7800 - 1700 2300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=10 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 250 380 Turn-on delay time t d(on) - 21 - Rise time tr - 115 - Turn-off delay time t d(off) - 52 - Fall time tf - 9 - Gate to source charge Q gs - 11.4 15.2 Gate charge at threshold Q g(th) - 6 7.4 Gate to drain charge Q gd - 7 10.8 Switching charge Q sw - 13 18.6 Gate charge total Qg - 40 52.7 Gate plateau voltage V plateau - 1.9 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 36 48.2 Output charge Q oss V DD=10 V, V GS=0 V - 23 - - - 92 - - 200 V DD=10 V, V GS=4.5 V, I D=50 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=10 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.85 1.2 Reverse recovery charge Q rr V R=10 V, I F=I S, di F/dt =100 A/µs - 28 - 4) Rev.1.06 T C=25 °C A V nC See figure 16 for gate charge parameter definition page 3 2010-07-01 BSC026N02KS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥4.5 V 80 120 70 100 60 80 I D [A] P tot [W] 50 40 60 30 40 20 20 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 10 µs 100 µs 102 100 1 ms 0.5 0.2 101 Z thJC [K/W] I D [A] DC 10 ms 0.1 10-1 0.05 0.02 0.01 10 0 10-2 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev.1.06 single pulse 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-07-01 BSC026N02KS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 10 4V 9 175 3V 8 150 2.5 V 7 2.4 V 100 75 6 R DS(on) [mW] I D [A] 125 2V 5 2.2 V 4 2.2 V 2.5 V 3 3V 50 2 2V 25 1.6 V 0 1 2 4V 1 1.8 V 0 3.5 V 4.5 V 0 3 0 10 V DS [V] 20 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 300 250 75 g fs [S] I D [A] 200 50 150 100 25 25 °C 50 150 °C 0 0 0 1 2 3 Rev.1.06 0 25 50 75 100 I D [A] V GS [V] page 5 2010-07-01 BSC026N02KS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=4.5 V V GS(th)=f(T j); V GS=V DS 5 1.6 4 3 V GS(th) [V] R DS(on) [mΩ] 1.2 98% typ 2 2000 µA 200 µA 0.8 0.4 1 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 102 25 °C I F [A] C [pF] Coss 103 150 °C 150 °C, 98% 101 25 °C, 98% 100 Crss 102 10-1 0 5 10 15 20 V DS [V] Rev.1.06 0 0.5 1 1.5 2 V SD [V] page 6 2010-07-01 BSC026N02KS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 103 5 4 16 V 10 2 25 °C 10 V V GS [V] I AV [A] 3 100 °C 125 °C 10 4V 2 1 1 100 0 100 101 102 103 0 10 t AV [µs] 20 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 24 V GS Qg V BR(DSS) [V] 22 20 V g s(th) 18 Q g(th) Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev.1.06 page 7 2010-07-01 BSC026N02KS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev.1.06 page 8 2010-07-01 BSC026N02KS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev.1.06 page 9 2010-07-01 BSC026N02KS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.06 page 10 2010-07-01