BSB017N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) V DS 30 V R DS(on),max 1.7 mΩ ID 147 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance CanPAKTM M MG-WDSON-2 • Low profile (<0.7 mm) • 100% avalanche tested • 100% Rg Tested • Double-sided cooling • Pb-free plating; RoHS compliant • Compatible with DirectFET® package MX footprint and outline 1) • Qualified according to JEDEC2) for target applications Type Package Outline Marking BSB017N03LX3 G MG-WDSON-2 MX 1103 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 147 V GS=10 V, T C=100 °C 93 V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Unit A 32 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 40 Avalanche energy, single pulse E AS I D=40 A, R GS=25 Ω 225 mJ Gate source voltage V GS ±20 V 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. 2) J-STD20 and JESD22 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 page 1 2009-05-11 BSB017N03LX3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature Value T C=25 °C 57 T A=25 °C, R thJA=45 K/W 2.8 T j, T stg W -40 ... 150 IEC climatic category; DIN IEC 68-1 Parameter Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - 1.0 - top - - 2.2 6 cm2 cooling area5) - - 45 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 10 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 2.0 2.5 mΩ V GS=10 V, I D=30 A - 1.4 1.7 0.2 0.5 0.8 Ω 65 130 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2009-05-11 BSB017N03LX3 G Parameter Values Symbol Conditions Unit min. typ. max. - 5900 7800 - 2300 3100 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 120 - Turn-on delay time t d(on) - 5.8 - Rise time tr - 6.4 - Turn-off delay time t d(off) - 35 - Fall time tf - 6.0 - Gate to source charge Q gs - 17 - Gate charge at threshold Q g(th) - 9.5 - Gate to drain charge Q gd - 8.2 - Switching charge Q sw - 15 - Gate charge total Qg - 37 49 Gate plateau voltage V plateau - 2.8 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 77 102 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 32 - Output charge Q oss V DD=15 V, V GS=0 V - 50 - - - 57 - - 400 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 6) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.79 - Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 50 6) Rev. 2.0 T C=25 °C A V nC See figure 16 for gate charge parameter definition page 3 2009-05-11 BSB017N03LX3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 160 60 50 120 I D [A] P tot [W] 40 30 80 20 40 10 0 0 0 40 80 120 160 0 40 80 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 T C [°C] T C [°C] 101 limited by on-state resistance 1 µs 10 µs 102 100 100 µs 0.5 10 DC 1 Z thJC [K/W] I D [A] 0.2 1 ms 0.1 10 -1 0.05 0.02 10 ms 0.01 10 0 10 -1 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 2.0 single pulse 10-3 10-1 10 -2 page 4 2009-05-11 BSB017N03LX3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 800 6 720 5 5V 640 4.5 V 560 I D [A] 480 R DS(on) [mΩ] 4 4V 10 V 400 320 3.2 V 3 3.5 V 4V 4.5 V 2 240 5V 10 V 7V 3.5 V 160 1 3.2 V 80 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 400 360 320 320 280 240 I D [A] g fs [S] 240 160 200 160 120 80 80 150 °C 40 25 °C 0 0 0 1 2 3 4 5 Rev. 2.0 0 40 80 120 160 I D [A] V GS [V] page 5 2009-05-11 BSB017N03LX3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 2.8 2.5 2.4 2 98 % 1.6 V GS(th) [V] R DS(on) [mΩ] 2 typ 1.2 1.5 1 0.8 0.5 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 1000 25 °C 150 °C, 98% 104 100 Coss 150 °C I F [A] C [pF] Ciss 103 10 Crss 10 2 101 0 5 10 15 20 25 30 V DS [V] Rev. 2.0 25 °C, 98% 1 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2009-05-11 BSB017N03LX3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 25 °C 100 °C V GS [V] I AV [A] 24 V 8 125 °C 10 6 4 2 1 0 1 10 100 1000 0 16 32 48 64 80 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2009-05-11 BSB017N03LX3 G Package Outline Rev. 2.0 page 8 2009-05-11 BSB017N03LX3 G Package Outline MG-WDSON-2 PG-TDSON-8: Tape Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSB017N03LX3 G Dimensions in mm Recommended stencil thickness 150 µm Rev. 2.0 page 10 2009-05-11 BSB017N03LX3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11