WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. current capability, low forward voltage drop. • High FEATURE surge capability. • High ƽHigh current capacity in compact package. for • Guardring IC = í0.8A.overvoltage protection. high-speed switching. • Ultra ƽEpitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. ƽNPN complement: 2SD1781K • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ƽ We declare that MIL-STD-19500 /228the material of product compliance with RoHS requirements. Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing codecode suffix suffix "H" RoHS product for packing ”G” SOT– 23 Mechanical data Halogen free product for packing code suffix “H” : UL94-V0 rated flame Level retardant • Epoxy Moisture Sensitivity 1 plastic, SOD-123H • Case : Molded DEVICE MARKING AND ORDERING INFORMATION , • Terminals :Plated terminals, solderable per MIL-STD-750 Device Method 2026 Marking 3 0.031(0.8) Typ. 0.031(0.8) Typ. 1 Shipping • Polarity : Indicated by cathode band 2SB1197KQLT1 AHQ Position : Any • Mounting 2SB1197KRLT1 AHR • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) COLLECTOR BASE Dimensions in inches and (millimeters) 3000/Tape&Reel 2 EMITTER 3000/Tape&Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS(Ta=25qC) Ratings at 25℃ ambient temperature unless otherwise specified. Symbol load. Limits Parameter Single phase half wave, 60Hz, resistive of inductive For capacitive load, derate current by 20% VCBO −40 Collector-base voltage Collector-emitter voltage RATINGS Marking Code Emitter-base voltage Maximum Recurrent Reverse Voltage CollectorPeak current Maximum RMS Voltage Collector power dissipation Maximum DC Blocking Voltage Junction temperature Maximum Average Forward Rectified Current Storage temperature −5 12 20 −0.8 VEBO IC VRRM PC VRMS Tj VDC 21 30 IO −55 to 150 Peak Forward Surge Current 8.3 ms single half sine-wave ELECTRICAL CHARACTERISTICS(Ta=25qC) IFSM V 14 A 40 28 W 40 °C °C Tstg Typ. Max. Unit − − V − -55 to−+125 V − − V ICBO − − −0.5 µA Cob − 12 30 pF 15 50 16 60 18 80 10 100 115 150 120 200 V 35 42 56 70 105 140 V 50 60 80 100 150 200 V 1.0 30 Conditions 40 IC= −50µA 120 IC= −1mA A A ℃ P -55 to +150 IE= −50µA - 65 to +175 VCB= −20V Collector cutoff current CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U −0.5 − VEB= −4V − IEBO µA Emitter cutoff current V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 −0.5 VCE(sat) IC/IB= −0.5A/ −50mA − − V Collector-emitter saturation voltage 0.5 Maximum Average Reverse Current at @T A=25℃ m 390 hFE IR 120 − − VCE= −3V, IC= −100mA DC current transfer ratio 10 @T A=125℃ Rated DC Blocking Voltage − − VCE= −5V, IE=50mA, f=100MHz 200 fT MHz Transition frequency NOTES: Output capacitance 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 13 30 14 0.2 20 150 Parameter Symbol Min. Typical Thermal Resistance (Note 2) RΘJA BVCBO −40 Collector-base breakdown voltage Typical Junction Capacitance (Note 1) CJ CEO BV Collector-emitter breakdown voltage Operating Temperature Range TJ −32 BVEBO Emitter-base breakdown voltage Storage Temperature Range TSTG −5 V VCEO SYMBOL FM120-MH −32 FM130-MHVFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U superimposed on rated load (JEDEC method) Unit VCB= −10V, IE=0A, f=1MHz 2- Thermal Resistance From Junction to Ambient hFE values are classified as follows : Item(*) hFE 2012-06 2012- Q 120~270 R 180~390 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1197KxLT1THRU Low Frequency FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 0.146(3.7) 0.130(3.3) .063(1.60) .047(1.20) .006(0.15)MIN. 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .083(2.10) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .080(2.04) .070(1.78) RATINGS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .004(0.10)MAX. superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ .020(0.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 0.92 VF 0.50 0.70 0.85 .012(0.30) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ IR 0.5 10 mA NOTES: Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss,Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (2) (1) 2SB1197K x Tape&Reel: 3 Kpcs/Reel capability. LT1 G ‐WS • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) epitaxial CLASSIFICATION OF h FE RANK planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 which may be included on WILLAS data sheets and/ or specifications can Maximum Recurrent Peak Reverse Voltage Volt VRRM Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 life‐saving implant or other applications intended for life‐sustaining or other related Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.