WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. High currentDescription capability, low forward voltage drop. •General • High surge capability. The MOSFETs from WILLAS provide the • Guardring for overvoltage protection. of fast switching, low Ultracombination high-speed switching. •best Silicon epitaxialand planar chip, metal silicon junction. •on-resistance cost-effectiveness. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Features ● ● ● ● Pb-Free package/228 is available MIL-STD-19500 0.012(0.3) Typ. VDS (V) = 20V 0.071(1.8) ID = 600mA 0.056(1.4) RDS(ON) < 350mΩ (VGS = 4.5V) RDS(ON) < 470mΩ (VGS = 2.5V) RoHS product product for code suffix "G" ”G” forpacking packing code suffix •RoHS Halogen free forfor packing codecode suffixsuffix "H" “H” Halogen freeproduct product packing Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Pin configurations • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 See Diagram below • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 SOT-523 50 60 80 100 150 200 Volts MARKING:( IO Peak Forward Surge Current 8.3 ms single half sine-wave MAXIMUM RATINGS (TJ=25°C IFSMunless 1.0 30 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Parameter otherwise noted) RΘJA Drain−to−Source Voltage Typical Junction Capacitance (Note 1) CJ Operating Temperature Range Gate−to−Source Storage Temperature Range Continuous Drain Current(Note1)) CHARACTERISTICS TJ Voltage NOTES: VF @T A=25℃ @T A=125℃ -55 to +125 40 20 120 VGS ±8 Units V ℃/W PF -55 to +150 ℃ V - 65 to +175 0.50 0.70 0.85 mW PD 0.5 170 tp =10 µs IDM 1 A TJ, −55 to °C TSTG 150 IS 250 mA TL 260 °C Operating Junction and Storage Temperature 2- Thermal Resistance From Junction to Ambient Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2013-04 VDSS Value Steady State IR Pulsed Drain Current 2012-06 TSTG 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Symbol Amps TA = 25°C 600 mA Steady ID FM130-MH FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH State TA = 85°C 400 FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC Power Dissipation Maximum Average Reverse Current at (Note 1) Rated DC Blocking Voltage Amps 0.9 0.92 ℃ UNIT Volts mAmps 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) • Low profile surface mounted application in order to Symbol Test Condition optimizeParameter board space. Low power loss, high efficiency. •OFF CHARACTERISTICS • High current capability, low forward voltage drop. Breakdown V(BR)DSS VGS = 0 V, ID = 250 µA High surge capability. •Drain−to−Source Guardring for overvoltage protection. •Voltage Ultra high-speed switching. •Zero Gate Voltage Drain I VGS = 0 V, VDS = 16 V silicon junction. • Silicon epitaxial planar chip, metalDSS Lead-free parts meet environmental standards of •Current MIL-STD-19500 /228 Gate−to−Source Leakage IGSS VDS = 0 V, VGS = ±8 V "G" • RoHS product for packing code suffix Current Halogen free product for packing code suffix "H" SOD-123H Min Typ Max 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 20 V 0.071(1.8) 0.056(1.4) 1 ±10.0 Mechanical data ON CHARACTERISTICS (Note 2) Epoxy : UL94-V0 rated flame retardant •Gate Threshold Voltage VGS = VDS, ID = 250 µA 0.45 VGS(TH) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Drain−to−Source On Resistance VGS = 4.5 V, RDS(on) , ID = 600 mA • Terminals :Plated terminals, solderable per MIL-STD-750 Drain−to−Source Method 2026 On RDS(on) 0.9 VGS = 2.5 V, ID = 500 mA •Resistance Polarity : Indicated by cathode band gFS MountingTransconductance Position : Any •Forward •CHARGES Weight : Approximated 0.011 gram AND CAPACITANCES VDS = 10 V, ID = 400 mA CISS ELECTRICAL GS MAXIMUM RATINGS AND CHARACTERISTICS V = 0 V, f = 1.0 MHz, VDS = 16 V OSS Ratings Output at 25℃ Capacitance ambient temperature unlessCotherwise specified. Single phase half Transfer wave, 60Hz, resistive of inductive Reverse Capacitance CRSS load. For capacitive load, derate current by 20% Total Gate Charge RATINGS Gate−to−Source Charge Marking Code QGS V, ID = 0.25 A 12 20 VDC IO Peak Forward Surge Current ms single half sine-wave Turn−Off Delay8.3 Time td(OFF) IFSM Maximum Average Forward Rectified Current Rise Time tr superimposed on rated load (JEDEC method) VSD Storage Temperature Range TJ TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage mΩ 1.2 S 130 pF 1.4 nC 0.35 14 40 15 50 16 600.55 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 50 606 80 100 150 ns 200 Volts 61.0 2530 13 40 120 VGS = 0 V,-55 toT+125 J = 25°C IS = 200 TJ Amps 0.69 - 65 to +175 =1 Amps ℃/W -551.1 to +150 PF ℃ V ℃ 0.58 mA 25°CFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM130-MH SYMBOL FM120-MH VF Maximum Forward Voltage at 1.0A DC mΩ 13 30 20 = 4.530V, V 40 = VGS DD 10 V, ID = 0.2 A, RG = 10 Ω tf Typical Thermal Resistance (Note 2) RΘJA DRAIN−SOURCE CHARACTERISTICS Typical Junction Capacitance (Note DIODE 1) CJ Fall Time OperatingForward Temperature Range Diode Voltage 470 V 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT QGD VRRM 14 MaximumSWITCHING RMS Voltage VRMS CHARACTERISTICS (Note 3) 370 0.040(1.0) 0.024(0.6) 15 VGS = 4.5 V, VDS = 10 td(ON) 350 µA 21 QG(TOT) ChargeVoltage MaximumGate−to−Drain Recurrent Peak Reverse MaximumTurn−On DC Blocking Voltage Delay Time 280 µA 650 900 Dimensions in inches and (millimeters) VGS = 1.8 V, ID = 350 mA Input Capacitance Unit @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-04 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Typical Electrical Characteristics 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-04 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET Pb Free Product SOD-123+ PACKAGE Package outline Features Electrical Batch process design, excellentCharacteristics power dissipation offers •Typical better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-04 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-523 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .004(0.10)MIN. Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .035(0.90) .028(0.70) .067(1.70) .059(1.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .069(1.75) .057(1.45) Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Operating Temperature Range TJ Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS 115 150 120 200 Volts 56 70 105 140 Volts 80 100 150 200 Volts 40 50 16 60 18 80 14 21 28 35 42 20 30 40 50 60 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR .014(0.35) .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NOTES: .008(0.20) 10 100 .004(0.10) 30 IO IFSM Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 12 20 RΘJA Typical Thermal Resistance (Note 2) VRRM .043(1.10) VRMS .035(0.90)VDC .014(0.35) 13.010(0.25) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 2- Thermal Resistance From Junction to Ambient 0.50 0.70 .035(0.90) .028(0.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.85 0.5 10 0.9 0.92 Volts mAmps Dimensions in inches and (millimeters) 2012-06 2013-04 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SE2102E FM1200-M+ Small Signal MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V 20 V, 600 mA, Single N-Channel MOSFET SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) power loss, high efficiency. • Low Ordering Information: 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (1) (2) overvoltage protection. • Guardring forSE2102E ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) Note: (1) Packing code, Tape & Reel • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. For capacitivespecification herein, to make corrections, modifications, enhancements or other load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS contained are intended to provide a product description only. "Typical" parameters Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermaluse of any product or circuit. Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: 1- Measured at 1 such applications do so at their own risk and shall agree to fully indemnify WILLAS MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code 2012-06 2013-04 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.