WILLAS FM120-M+ DTC114TE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features• Low power loss, high efficiency. • • x x x 0.146(3.7) 0.130(3.3) Pb-Free• package iscapability, available High current low forward voltage drop. High surge capability. • RoHS product for packing code suffix ”G” Guardring for overvoltage protection. Halogen• free product for packing code suffix “H” • Ultra high-speed switching. Epoxy meets UL 94 V-0 flammability rating • Silicon epitaxial planar chip, metal silicon junction. Moisure •Sensitivity Level 1 Lead-free parts meet environmental standards of Built-in bias resistors enable MIL-STD-19500 /228 the configuration of an inverter circuit without connecting external input resistors RoHS product for packing code suffix "G"(see equivalent circuit) • The bias resistors consist offor thin-film Halogen free product packing resistors code suffix with "H" complete isolation Mechanical to allow negativedata biasing of the input. They also have the advantage of almost completely eliminating parasitic effects • Epoxy : UL94-V0 rated flame retardant Only the on/off conditions need to be set for operation, making : Molded plastic, SOD-123H • Caseeasy device design , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. SOT-523 0.071(1.8) 0.056(1.4) .067(1.70) .059(1.50) .035(0.90) .028(0.70) • 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 .014(0.35) • Polarity : Indicated by cathode band Absolute Maximum Position : Any • MountingRatings • Weight : ApproximatedSymbol 0.011 gram Parameter Dimensions in inches and (millimeters) .010(0.25) Value Unit RATINGS mW к FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 150 SYMBOL FM120-MH FM130-MH TJ Code Range StorageMarking Temperature TSTG Maximum Recurrent Peak Reverse Voltage -55~150 VRRM 12 20 к 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Electrical Characteristics Peak Forward Surge Current 8.3 ms single half sine-wave Sym V mA .069(1.75) .057(1.45) 150 Junction Temperature V CHARACTERISTICS V .004(0.10)MIN. Collector-Base Voltage VCBO 50 Collector-Emitter Voltage MAXIMUM RATINGS VCEO AND ELECTRICAL 50 Ratings at 25℃ ambient temperature unless otherwise5 specified. Emitter-Base voltage VEBO CollectorSingle Current-Continuous IC of inductive load. 100 phase half wave, 60Hz, resistive CollectorFor Dissipation capacitive load, derate current byP20% C .043(1.10) .035(0.90) Parameter superimposed on rated load (JEDEC method) Min IFSM Typ Max Unit 1.0 30 .008(0.20) .004(0.10) Collector-Base Breakdown Voltage V 50 RΘJA----V(BR)CBO 40 Typical (Note 2) =50uA, IResistance (ICThermal E=0) 120 Typical Junction Capacitance (Note Voltage 1) CJ Collector-Emitter Breakdown .004(0.10)MAX. 50 ----V V(BR)CEO (IC=1mA, IB=0) Range -55 to +125 -55 to +150 Operating Temperature TJ Emitter-Base Breakdown Voltage - 65 to +175 5 ----V V(BR)EBO Storage Temperature Range TSTG (IE=50uA, IC=0) Collector Cut-off Current ----0.5 uA ICBO .014(0.35) (VCB=50V, IE=0) CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .006(0.15) Emitter Cut-off Current 0.9 0.92 VF --0.70 0.85 IEBO Maximum Forward Voltage at 1.0A DC --0.5 uA 0.50 (VEB=4V, IC=0) 0.5 Maximum Average Reverse Current at @T A=25℃ DC Current Gain IR300 100 600 --hFE IC=1mA) 10 @T A=125℃ Rated(V DC Blocking Voltage CE=5V, Dimensions in inches and (millimeters) Collector-Emitter Saturation Voltage ----0.3 V VCE(sat) (IC=10mA, IB=1mA) NOTES: R1 1- Measured Input Resistor 7 VDC. 10 13 K¡ at 1 MHZ and applied reverse voltage of 4.0 Transition Frequency --250 --MHz fT 2- Thermal Resistance From Junction to Ambient (VCE=10V, IE=-5mA, f=100MHz) .035(0.90) .028(0.70) *Marking: 04 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114TE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS NPN Digital Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers FM120-M+ DTC114TE THRU FM1200-M+ Pb Free Product Package outline better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profileInformation: Ordering optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (1) (2) capability, low • High current DTC114TE –T G forward ‐WS voltage drop. Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring high-speed switching. • Ultra (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratingsspecification herein, to make corrections, modifications, enhancements or other at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM which may be included on WILLAS data sheets and/ or specifications can V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Marking Code Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures . 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.