WILLAS BSS138WT1

WILLAS
FM120-M+
BSS138WT1
THRU
FM1200-M+
Power MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-323
High current capability,
low forward voltage drop.
• N–Channel
• High surge capability.
Typical applications are dc–dc converters, power management in
• Guardring for overvoltage protection.
portable
and battery–powered
products such as computers, printers,
switching.
• Ultra high-speed
cards,planar
cellular
and
cordless
Silicon epitaxial
chip,
metal
silicontelephones.
junction.
• PCMCIA
Lead-free
parts meet
environmental
of makes it ideal for low
••
Low Threshold
Voltage
(V GS(th)standards
: 0.5V...1.5V)
MIL-STD-19500 /228
voltage applications
• RoHS product for packing code suffix "G"
•Halogen
Miniature
SOT–323
Surface
Package saves board space
free product
for packing
codeMount
suffix "H"
Mechanical
datais available
• Pb-Free package
: UL94-V0 rated flame retardant
• Epoxy
RoHS product for packing code suffix ”G”
: Molded plastic, SOD-123H
• Case
Halogen
free product for packing code suffix “H” ,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
1
2
SOT–323 0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
ORDERING0.011
INFORMATION
• Weight : Approximated
gram
Device
Marking
Dimensions in inches and (millimeters)
Drain
3
Shipping
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
GateFM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
RATINGS
Marking Code
12
20
VRRM
Maximum Recurrent Peak Reverse Voltage
14
VRMS
Maximum RMS Voltage
13
30
21
Maximum MAXIMUM
DC Blocking Voltage
20 noted)
30
VDCotherwise
RATINGS (TA = 25 o C unless
Maximum Average Forward Rectified Current
IO
Symbol
IFSMV
Rating
Peak Forward Surge Current 8.3 ms single half sine-wave
Drain–to–Source Voltage
DSS
superimposed on rated load (JEDEC method)
Gate–to–Source
Voltage
Typical Thermal
Resistance (Note
2) – Continuous
RΘJAVGS
CJ
Typical Junction
(Note 1)
DrainCapacitance
Current
– Continuous
Operating Temperature
Range@ TA = 25°C
TJ
I
TSTG DM
– Pulsed Drain Current (tp ≤ 10 µs)
Storage Temperature Range
Total Power Dissipation @ TA = 25°C
CHARACTERISTICS
Operating
and Storage Temperature
ID
PD
TJ, Tstg
VF
Maximum Average Reverse Current at @T A=25℃
35
42
56
40
50
60
80
100
Unit
50
Vdc
± 20
16
60
150
120
200
Volts
140
Volts
200
Volts
Amps
Amps
Marking Diagram
40
Vdc
120
mA
-55 to +125
200
800
150
18
80
1.0
30
℃/W
PF
-55 to +150
- 65 to +175
mW
– 55 to
150
°C
0.50
Thermal Resistance – Junction–to–Ambient IR RθJA
556
°C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
260
°C
Rated DC Blocking Voltage
NOTES:
28
10
115
100
2 Source 150
70
105
Value
15
50
J1
℃
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward
Voltage at 1.0A DC
Range
14
40
M
BSS138WT1
J1 unless
3000
Tape & specified.
Reel
Ratings at 25℃
ambient temperature
otherwise
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@T A=125℃
TL
0.70
0.85
0.5 J1 = Device Code
M = Month Code
10
0.9
0.92
Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BSS138WT1
THRU
FM1200-M+
Power
MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
profile surface
mounted application(T
inAorder
tounless otherwise noted)
• Low
ELECTRICAL
CHARACTERISTICS
= 25°C
optimize board space.
Symbol
• Low power loss, high efficiency.Characteristic
OFF current
CHARACTERISTICS
capability, low forward voltage drop.
• High
surge capability.
• High
Drain–to–Source
Breakdown Voltage
overvoltage
protection.
• Guardring
(VGS = for
0 Vdc,
ID = 250 µAdc)
• Ultra high-speed switching.
Zero Gate Voltage Drain Current
epitaxial planar chip, metal silicon junction.
• Silicon
(VDS = 25 Vdc, VGS = 0 Vdc)
meet
standards of
• Lead-free
(V =parts
50 Vdc,
V environmental
= 0 Vdc)
DS
•
V(BR)DSS
Unit
–
Vdc
µAdc
–
–
–
–
0.1
0.5
IGSS
–
–
±0.1
µAdc
VGS(th)
0.5
–
1.5
Vdc
–
–
5.6
–
r
0.031(0.8) Typ.
DS(on)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Method 2026
Forward
Transconductance
Polarity : Indicated by cathode band
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Mounting Position : Any
DYNAMIC CHARACTERISTICS
Weight : Approximated 0.011 gram
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Input Capacitance
–
0.071(1.8)
0.056(1.4)
GS
: UL94-V0
flame retardant
• Epoxy
(VDS
= VGS, IDrated
= 1.0 mAdc)
: Molded
plastic, SOD-123H
• Case
Static
Drain–to–Source
On–Resistance
(VGS =:Plated
2.75 Vdc,
ID < 200 mAdc,
TA = –40°C
to +85°C) ,
• Terminals
terminals,
solderable
per MIL-STD-750
Max
0.012(0.3) Typ.
50
IDSS
MIL-STD-19500 /228
Gate–Source
(VGS"G"
= ± 20 Vdc, VDS = 0 Vdc)
RoHS
product forLeakage
packingCurrent
code suffix
Halogen free product for packing code suffix "H"
ON CHARACTERISTICS (Note 1.)
MAXIMUM
Output
CapacitanceRATINGS
Typ
0.130(3.3)
Mechanical
data
Gate–Source Threshold Voltage
•
•
•
Min
0.146(3.7)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
10
3.5
Ohms
gfs
–
Dimensions
in100
inches and (millimeters)
–
mmhos
Ciss
–
40
50
pF
AND ELECTRICAL
CHARACTERISTICS
(VDS = 25 Vdc, VGS
= 0, f = 1 MHz)
Coss
–
12
25
Ratings at 25℃
ambient
temperature unless otherwise
Transfer
Capacitance
(VDG =specified.
25 Vdc, VGS = 0, f = 1 MHz)
Crss
–
3.5
5.0
Single phase half wave, 60Hz, resistive of inductive load.
SWITCHING CHARACTERISTICS (Note 2.)
For capacitive load, derate current by 20%
ns
Turn–On Delay Time
td(on)
–
–
20
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL
RATINGS
(VDD = FM120-MH
30 Vdc, IDFM130-MH
= 0.2 Adc,)
Turn–Off Delay Time
t
–
–
20
Marking Code
12
13
14
15d(off) 16
18
10
115
120
1. Pulse Test:
Width
≤ 300 µs, Duty Cycle
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Pulse
Reverse
Voltage
Volts
VRRM ≤ 2%.20
2. Switching characteristics are independent of operating junction temperature.
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
20
30
40
50
60
80
100
150
1.0
30
40
120
-55 to +125
Volts
200
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BSS138WT1
THRU
FM1200-M+
Power MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
dissipation offers
• Batch process design, excellent power TYPICAL
ELECTRICAL CHARACTERISTICS
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
0.8
0.9
MIL-STD-19500 /228
0.3product for packing code suffix "G"
RoHS
Halogen
0.2 free product for packing code suffix "H"
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
•
I D , DRAIN CURRENT (AMPS)
• Low powerTJloss,
VGS = 3.5 V
= 25°Chigh efficiency.
• High0.7current capability, low forward voltage drop.
VGS = 3.25 V
• High surge capability.
0.6
for overvoltage protection.
• Guardring
VGS = 3.0 V
• Ultra0.5high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
VGS = 2.75 V
0.4
parts meet environmental standards of
• Lead-free
VGS = 2.5 V
Mechanical data
0.1
-55°C
0.7
0.071(1.8)
0.056(1.4)
0.5
0.4
0.3
0.2
0.040(1.0)
0.024(0.6)
0
0
0.5
2
2.5
30.031(0.8)
3.5Typ. 4
4.5
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Method 2026
Dimensions in inches and (millimeters)
1.25
ID = 1.0 mA
2
RATINGS
1.2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL
ID = 0.8 A
1.8
1.125
Ratings at 25℃ ambient temperature unless otherwise specified.
1.6 wave, 60Hz, resistive of inductive load.
Single phase half
VGS = 4.5 V
For capacitive load, derate current by 20%
1.4
1
ID = 0.5 A
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
20
13
30
Maximum Recurrent
1 Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
0.8
0.6 Forward Rectified Current
Maximum Average
-55
-5
IO
95
TEMPERATURE (°C)
J, JUNCTION
Peak Forward Surge Current 8.3 ms T
single
half sine-wave
IFSM
45
14
40
0.875
28
15
50
35
42
56
70
40
0.75
-55
50
60
80
100
145
Figure 3. On–Resistance Variation with
Typical Thermal Resistance (Note 2)
RΘJA
Temperature
CJ
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Typical Junction Capacitance (Note 1)
TJ
VDS = 40 V
TSTG
TJ = 25°C
10
8
NOTES:
115
150
120
200
Volts
105
140
Volts
150
200
Volts
120
145
Amps
Amps
Figure 4. Threshold Voltage Variation
40
with Temperature
120
℃/W
PF
-55 to +150
℃
- 65 to +175
0.50
0.70
℃
0.85
0.5
IR
10
0.9
0.92
Volts
mAmps
4
ID = 200 mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
10
100
-5 1.0 20
45
95
70
TJ, JUNCTION TEMPERATURE (°C)
30
-55 to +125
VF
@T A=125℃
18
80
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃ 6
Rated DC Blocking Voltage
16
60
-30
superimposed on rated load (JEDEC method)
1
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
2.2
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
150°C
0.6
0.1
• Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
• Case0:0Molded
2
4
5
6
7
8
9
10
1
3
,
• Terminals :Plated
solderable
per MIL-STD-750
VDSterminals,
, DRAIN-TO-SOURCE
VOLTAGE
(VOLTS)
25°C
0.146(3.7)
0.130(3.3)
2
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BSS138WT1
THRU
FM1200-M+
Power
MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
CHARACTERISTICS
dissipationELECTRICAL
offers
• Batch process design, excellent powerTYPICAL
better reverse leakage current and thermal resistance.
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
optimize board space.
V = 2.5 V
GS
loss, high efficiency.
• Low power
9
• High current capability, low forward voltage drop.
8
• High surge capability.
7 for overvoltage protection.
• Guardring
switching.
• Ultra high-speed
6
• Silicon epitaxial planar chip, metal silicon junction.
5 parts meet environmental standards of
• Lead-free
•
150°C
25°C
MIL-STD-19500 /228
4
RoHS product for packing code suffix "G"
Halogen3 free product for packing code suffix "H"
-55°C
Mechanical
data
2
• Epoxy :1UL94-V0 rated flame retardant
0.05 SOD-123H
0.15
0
0.1
0.2
plastic,
• Case : Molded
,
ID, DRAIN CURRENT (AMPS)
• Terminals :Plated terminals, solderable per MIL-STD-750
0.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
SOD-123H
surface mounted application in order to
• Low profile
10
8
0.071(1.8)
0.056(1.4)
5
4
25°C
3
2
1
-55°C
0.040(1.0)
0.024(0.6)
0
0.031(0.8) Typ.
0.05
0.15
0.1
0.2
0.031(0.8) Typ.
0.25
ID, DRAIN CURRENT (AMPS)
150°C
4.5
VGS = 10 V
4
150°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
3.5
4.5
Ratings at 25℃ ambient temperature unless otherwise specified.
4
Single phase half wave, 60Hz, resistive of inductive load.
3
3.5
For capacitive load, derate current by 20%
2.5
25°C
3
25°C
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
RATINGS
Marking Code 2.5
12
13
14 2
15
16
18
10
115
120
Maximum Recurrent
2 Peak Reverse Voltage
VRRM
20 -55°C 30
Maximum RMS Voltage
1.5
VRMS
14
VDC
0.3 0.35
Maximum Average Forward Rectified Current
IO
ID, DRAIN CURRENT (AMPS)
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
0
0.05
0.1
0.15
0.2
0.25
Figure
8. On–Resistance
superimposed on rated
load (JEDEC
method)
CJ
Operating Temperature Range
TJ
1
I D , DIODE CURRENT (AMPS)
Storage Temperature Range
0.1
TJ = 150°C
CHARACTERISTICS
@T A=125℃
Rated DC Blocking Voltage
40
281.5
40 1
0
50
60
80
100
35
42
56
70
50
0.05
-55 to +125
120
150
200
0.4 0.45 0.5
Volts
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
100
IR
℃
0.5
60
0.6
0.8
1.0
1.2
0
mAmps
10
Ciss
Coss
20
2- Thermal Resistance From Junction to Ambient
0.4
Volts
40
120
40
0.2
Volts
140
30
0.01
0
200
Figure 9. On–Resistance versus Drain Current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.001
60
80
100
0.15 0.2 0.25 0.3 0.35
1.0
ID, DRAIN CURRENT (AMPS)
0.1
150
-55°C
105
25°C
-55°C FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
Volts
0.9
0.92
VF
0.50 80
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
NOTES:
30
0.5
TSTG
Maximum Forward Voltage at 1.0A DC
0.45
RΘJA
Typical Junction Capacitance (Note 1)
20
0.4
21
versus Drain Current
Typical Thermal Resistance (Note 2)
150°C
Dimensions in inches and (millimeters)
5
Maximum DC Blocking
Voltage
1
0.012(0.3) Typ.
Figure 7. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
0.146(3.7)
0.130(3.3)
6
Method
2026
Figure
6. On–Resistance
versus Drain Current
• Polarity : Indicated by cathode band
6 Position : Any
• Mounting
VGS = 4.5 V
5.5: Approximated 0.011 gram
• Weight
VGS = 2.75 V
7
Crss
0
5
10
15
20
25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
2012-06
2012-0
Figure 11. Capacitance
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BSS138WT1
THRU
FM1200-M+
Power
MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOD-123H
SOT−323
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
.087(2.20)
• Ultra high-speed switching.
.070(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.056(1.40)
• Polarity : Indicated by cathode band .047(1.20)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
13
30
VRMS
12
.016(0.40)
20
.008(0.20)
14
VDC
20
30
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
IO
Peak Forward Surge Current 8.3 ms single half sine-wave Dimensions
IFSM
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
21
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
1.0
30
Maximum Average Forward Rectified Current
in inches and (millimeters)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50
IR0.025
0.65
0.70
0.025
0.65
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.075
1.9
0.035
0.9
0.028
0.7
2012-06
2012-0
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.