WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-323 High current capability, low forward voltage drop. • N–Channel • High surge capability. Typical applications are dc–dc converters, power management in • Guardring for overvoltage protection. portable and battery–powered products such as computers, printers, switching. • Ultra high-speed cards,planar cellular and cordless Silicon epitaxial chip, metal silicontelephones. junction. • PCMCIA Lead-free parts meet environmental of makes it ideal for low •• Low Threshold Voltage (V GS(th)standards : 0.5V...1.5V) MIL-STD-19500 /228 voltage applications • RoHS product for packing code suffix "G" •Halogen Miniature SOT–323 Surface Package saves board space free product for packing codeMount suffix "H" Mechanical datais available • Pb-Free package : UL94-V0 rated flame retardant • Epoxy RoHS product for packing code suffix ”G” : Molded plastic, SOD-123H • Case Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 3 1 2 SOT–323 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any ORDERING0.011 INFORMATION • Weight : Approximated gram Device Marking Dimensions in inches and (millimeters) Drain 3 Shipping MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 GateFM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS Marking Code 12 20 VRRM Maximum Recurrent Peak Reverse Voltage 14 VRMS Maximum RMS Voltage 13 30 21 Maximum MAXIMUM DC Blocking Voltage 20 noted) 30 VDCotherwise RATINGS (TA = 25 o C unless Maximum Average Forward Rectified Current IO Symbol IFSMV Rating Peak Forward Surge Current 8.3 ms single half sine-wave Drain–to–Source Voltage DSS superimposed on rated load (JEDEC method) Gate–to–Source Voltage Typical Thermal Resistance (Note 2) – Continuous RΘJAVGS CJ Typical Junction (Note 1) DrainCapacitance Current – Continuous Operating Temperature Range@ TA = 25°C TJ I TSTG DM – Pulsed Drain Current (tp ≤ 10 µs) Storage Temperature Range Total Power Dissipation @ TA = 25°C CHARACTERISTICS Operating and Storage Temperature ID PD TJ, Tstg VF Maximum Average Reverse Current at @T A=25℃ 35 42 56 40 50 60 80 100 Unit 50 Vdc ± 20 16 60 150 120 200 Volts 140 Volts 200 Volts Amps Amps Marking Diagram 40 Vdc 120 mA -55 to +125 200 800 150 18 80 1.0 30 ℃/W PF -55 to +150 - 65 to +175 mW – 55 to 150 °C 0.50 Thermal Resistance – Junction–to–Ambient IR RθJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds 260 °C Rated DC Blocking Voltage NOTES: 28 10 115 100 2 Source 150 70 105 Value 15 50 J1 ℃ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Range 14 40 M BSS138WT1 J1 unless 3000 Tape & specified. Reel Ratings at 25℃ ambient temperature otherwise Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ TL 0.70 0.85 0.5 J1 = Device Code M = Month Code 10 0.9 0.92 Volts mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application(T inAorder tounless otherwise noted) • Low ELECTRICAL CHARACTERISTICS = 25°C optimize board space. Symbol • Low power loss, high efficiency.Characteristic OFF current CHARACTERISTICS capability, low forward voltage drop. • High surge capability. • High Drain–to–Source Breakdown Voltage overvoltage protection. • Guardring (VGS = for 0 Vdc, ID = 250 µAdc) • Ultra high-speed switching. Zero Gate Voltage Drain Current epitaxial planar chip, metal silicon junction. • Silicon (VDS = 25 Vdc, VGS = 0 Vdc) meet standards of • Lead-free (V =parts 50 Vdc, V environmental = 0 Vdc) DS • V(BR)DSS Unit – Vdc µAdc – – – – 0.1 0.5 IGSS – – ±0.1 µAdc VGS(th) 0.5 – 1.5 Vdc – – 5.6 – r 0.031(0.8) Typ. DS(on) (VGS = 5.0 Vdc, ID = 200 mAdc) Method 2026 Forward Transconductance Polarity : Indicated by cathode band (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) Mounting Position : Any DYNAMIC CHARACTERISTICS Weight : Approximated 0.011 gram (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Input Capacitance – 0.071(1.8) 0.056(1.4) GS : UL94-V0 flame retardant • Epoxy (VDS = VGS, IDrated = 1.0 mAdc) : Molded plastic, SOD-123H • Case Static Drain–to–Source On–Resistance (VGS =:Plated 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) , • Terminals terminals, solderable per MIL-STD-750 Max 0.012(0.3) Typ. 50 IDSS MIL-STD-19500 /228 Gate–Source (VGS"G" = ± 20 Vdc, VDS = 0 Vdc) RoHS product forLeakage packingCurrent code suffix Halogen free product for packing code suffix "H" ON CHARACTERISTICS (Note 1.) MAXIMUM Output CapacitanceRATINGS Typ 0.130(3.3) Mechanical data Gate–Source Threshold Voltage • • • Min 0.146(3.7) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 10 3.5 Ohms gfs – Dimensions in100 inches and (millimeters) – mmhos Ciss – 40 50 pF AND ELECTRICAL CHARACTERISTICS (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss – 12 25 Ratings at 25℃ ambient temperature unless otherwise Transfer Capacitance (VDG =specified. 25 Vdc, VGS = 0, f = 1 MHz) Crss – 3.5 5.0 Single phase half wave, 60Hz, resistive of inductive load. SWITCHING CHARACTERISTICS (Note 2.) For capacitive load, derate current by 20% ns Turn–On Delay Time td(on) – – 20 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL RATINGS (VDD = FM120-MH 30 Vdc, IDFM130-MH = 0.2 Adc,) Turn–Off Delay Time t – – 20 Marking Code 12 13 14 15d(off) 16 18 10 115 120 1. Pulse Test: Width ≤ 300 µs, Duty Cycle 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Pulse Reverse Voltage Volts VRRM ≤ 2%.20 2. Switching characteristics are independent of operating junction temperature. Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 20 30 40 50 60 80 100 150 1.0 30 40 120 -55 to +125 Volts 200 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features dissipation offers • Batch process design, excellent power TYPICAL ELECTRICAL CHARACTERISTICS better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.8 0.9 MIL-STD-19500 /228 0.3product for packing code suffix "G" RoHS Halogen 0.2 free product for packing code suffix "H" VDS = 10 V 0.8 I D , DRAIN CURRENT (AMPS) • I D , DRAIN CURRENT (AMPS) • Low powerTJloss, VGS = 3.5 V = 25°Chigh efficiency. • High0.7current capability, low forward voltage drop. VGS = 3.25 V • High surge capability. 0.6 for overvoltage protection. • Guardring VGS = 3.0 V • Ultra0.5high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. VGS = 2.75 V 0.4 parts meet environmental standards of • Lead-free VGS = 2.5 V Mechanical data 0.1 -55°C 0.7 0.071(1.8) 0.056(1.4) 0.5 0.4 0.3 0.2 0.040(1.0) 0.024(0.6) 0 0 0.5 2 2.5 30.031(0.8) 3.5Typ. 4 4.5 Figure 2. Transfer Characteristics Figure 1. On–Region Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Method 2026 Dimensions in inches and (millimeters) 1.25 ID = 1.0 mA 2 RATINGS 1.2 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL ID = 0.8 A 1.8 1.125 Ratings at 25℃ ambient temperature unless otherwise specified. 1.6 wave, 60Hz, resistive of inductive load. Single phase half VGS = 4.5 V For capacitive load, derate current by 20% 1.4 1 ID = 0.5 A Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 13 30 Maximum Recurrent 1 Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 0.8 0.6 Forward Rectified Current Maximum Average -55 -5 IO 95 TEMPERATURE (°C) J, JUNCTION Peak Forward Surge Current 8.3 ms T single half sine-wave IFSM 45 14 40 0.875 28 15 50 35 42 56 70 40 0.75 -55 50 60 80 100 145 Figure 3. On–Resistance Variation with Typical Thermal Resistance (Note 2) RΘJA Temperature CJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Junction Capacitance (Note 1) TJ VDS = 40 V TSTG TJ = 25°C 10 8 NOTES: 115 150 120 200 Volts 105 140 Volts 150 200 Volts 120 145 Amps Amps Figure 4. Threshold Voltage Variation 40 with Temperature 120 ℃/W PF -55 to +150 ℃ - 65 to +175 0.50 0.70 ℃ 0.85 0.5 IR 10 0.9 0.92 Volts mAmps 4 ID = 200 mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 10 100 -5 1.0 20 45 95 70 TJ, JUNCTION TEMPERATURE (°C) 30 -55 to +125 VF @T A=125℃ 18 80 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ 6 Rated DC Blocking Voltage 16 60 -30 superimposed on rated load (JEDEC method) 1 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any 2.2 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 150°C 0.6 0.1 • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case0:0Molded 2 4 5 6 7 8 9 10 1 3 , • Terminals :Plated solderable per MIL-STD-750 VDSterminals, , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 25°C 0.146(3.7) 0.130(3.3) 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features CHARACTERISTICS dissipationELECTRICAL offers • Batch process design, excellent powerTYPICAL better reverse leakage current and thermal resistance. RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) optimize board space. V = 2.5 V GS loss, high efficiency. • Low power 9 • High current capability, low forward voltage drop. 8 • High surge capability. 7 for overvoltage protection. • Guardring switching. • Ultra high-speed 6 • Silicon epitaxial planar chip, metal silicon junction. 5 parts meet environmental standards of • Lead-free • 150°C 25°C MIL-STD-19500 /228 4 RoHS product for packing code suffix "G" Halogen3 free product for packing code suffix "H" -55°C Mechanical data 2 • Epoxy :1UL94-V0 rated flame retardant 0.05 SOD-123H 0.15 0 0.1 0.2 plastic, • Case : Molded , ID, DRAIN CURRENT (AMPS) • Terminals :Plated terminals, solderable per MIL-STD-750 0.25 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) SOD-123H surface mounted application in order to • Low profile 10 8 0.071(1.8) 0.056(1.4) 5 4 25°C 3 2 1 -55°C 0.040(1.0) 0.024(0.6) 0 0.031(0.8) Typ. 0.05 0.15 0.1 0.2 0.031(0.8) Typ. 0.25 ID, DRAIN CURRENT (AMPS) 150°C 4.5 VGS = 10 V 4 150°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3.5 4.5 Ratings at 25℃ ambient temperature unless otherwise specified. 4 Single phase half wave, 60Hz, resistive of inductive load. 3 3.5 For capacitive load, derate current by 20% 2.5 25°C 3 25°C FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH RATINGS Marking Code 2.5 12 13 14 2 15 16 18 10 115 120 Maximum Recurrent 2 Peak Reverse Voltage VRRM 20 -55°C 30 Maximum RMS Voltage 1.5 VRMS 14 VDC 0.3 0.35 Maximum Average Forward Rectified Current IO ID, DRAIN CURRENT (AMPS) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 0 0.05 0.1 0.15 0.2 0.25 Figure 8. On–Resistance superimposed on rated load (JEDEC method) CJ Operating Temperature Range TJ 1 I D , DIODE CURRENT (AMPS) Storage Temperature Range 0.1 TJ = 150°C CHARACTERISTICS @T A=125℃ Rated DC Blocking Voltage 40 281.5 40 1 0 50 60 80 100 35 42 56 70 50 0.05 -55 to +125 120 150 200 0.4 0.45 0.5 Volts Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 100 IR ℃ 0.5 60 0.6 0.8 1.0 1.2 0 mAmps 10 Ciss Coss 20 2- Thermal Resistance From Junction to Ambient 0.4 Volts 40 120 40 0.2 Volts 140 30 0.01 0 200 Figure 9. On–Resistance versus Drain Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.001 60 80 100 0.15 0.2 0.25 0.3 0.35 1.0 ID, DRAIN CURRENT (AMPS) 0.1 150 -55°C 105 25°C -55°C FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH Volts 0.9 0.92 VF 0.50 80 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ NOTES: 30 0.5 TSTG Maximum Forward Voltage at 1.0A DC 0.45 RΘJA Typical Junction Capacitance (Note 1) 20 0.4 21 versus Drain Current Typical Thermal Resistance (Note 2) 150°C Dimensions in inches and (millimeters) 5 Maximum DC Blocking Voltage 1 0.012(0.3) Typ. Figure 7. On–Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.146(3.7) 0.130(3.3) 6 Method 2026 Figure 6. On–Resistance versus Drain Current • Polarity : Indicated by cathode band 6 Position : Any • Mounting VGS = 4.5 V 5.5: Approximated 0.011 gram • Weight VGS = 2.75 V 7 Crss 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. Body Diode Forward Voltage 2012-06 2012-0 Figure 11. Capacitance WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BSS138WT1 THRU FM1200-M+ Power MOSFET 200 mAmps, 50 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H SOT−323 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) .054(1.35) .045(1.15) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) .004(0.10)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. .070(1.80) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 .056(1.40) • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 13 30 VRMS 12 .016(0.40) 20 .008(0.20) 14 VDC 20 30 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Maximum DC Blocking Voltage IO Peak Forward Surge Current 8.3 ms single half sine-wave Dimensions IFSM .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. .004(0.10)MAX. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 21 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 Maximum Average Forward Rectified Current in inches and (millimeters) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 IR0.025 0.65 0.70 0.025 0.65 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.075 1.9 0.035 0.9 0.028 0.7 2012-06 2012-0 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.