WILLAS FM120-M+ 2SB1073 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR better(PNP) reverse leakage current and thermal resistance. • Low profile surface mounted application in order to FEATURES SOT-89 SOD-123H optimize board space. Low collector-emitter power loss, high saturation efficiency. voltage VCE(sat) • Low High current capability, low forward • Large peak collector current IC voltage drop. • High surge capability. Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing high-speed switching.code suffix ”G” • Ultra Silicon epitaxial planar metal silicon • Halogen free product forchip, packing code junction. suffix “H” Lead-free parts meet environmental standards of • Moisture Sensitivity Level 1 z z z z 0.146(3.7) 0.130(3.3) 1. BASE 2. COLLECTOR 1 0.071(1.8) 0.056(1.4) 2 3. EMITTER MIL-STD-19500 /228 0.012(0.3) Typ. 3 product for(T packing code suffix "G" • RoHS MAXIMUM RATINGS unless otherwise noted) a=25℃ Halogen free product for packing code suffix "H" SymbolMechanical Parameter data VCEO VEBO PC TJ Tstg 0.040(1.0) 0.024(0.6) V : UL94-V0 rated flame retardant -30 • Epoxy Collector-Base Voltage • Case : Molded plastic, SOD-123H Collector-Emitter Voltage -20 V , • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter-Base Voltage Method 2026 Collector Currentby -Continuous • Polarity : Indicated cathode band CollectorPosition Power :Dissipation Any • Mounting • Weight : Approximated Junction Temperature0.011 gram IC Unit 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry VCBO Value -7 V -4 A 0.5 W 150 ℃ Dimensions in inches and (millimeters) ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Storage Temperature -55-150 im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) For capacitive load, derate current by 20% Parameter RATINGS Marking Code FM130-MH FM140-MH FM150-MH FM160-MH Symbol Test conditions MinFM180-MH Typ FM1100-MH Max FM1150-MH Unit FM1200-MH SYMBOL FM120-MH Collector-base breakdown voltage Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Collector-emitter breakdown voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Emitter-base breakdown voltageCurrent 12 13 14 40 15 50 16 60 -30 18 80 10 100 115 150V 120 200 VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Pr el = 0 V(BR)CBO E 30 20 VRRM IC=-10μA,I = V(BR)CEO IC=-1mA,IB 0 IO = IE=-10μA,IC 0 V(BR)EBO 1.0 -7 30 Peak Forward Surge Current 8.3 ms single half sine-wave = ICBOIFSM VCB=-30V,IE 0 Collector cut-off current superimposed on rated load (JEDEC method) = IEBORΘJA VEB=-7V,IC 0 Typicalcut-off Thermalcurrent Resistance (Note 2) Emitter CJ Typical Junction Capacitance (Note 1) hFE TJ DCOperating currentTemperature gain Range Storage Temperature Range Collector-emitter saturation voltage V V -0.1 μA -0.1 μA 40 120 120 -55 to +150 315 - 65 to +175 -1 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH fT V F Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 VCE=-2V,I = C -2A = IC=-3A,IB -100mA VCE(sat) Transition frequency Maximum Forward Voltage at 1.0A DC Collector output capacitance TSTG CHARACTERISTICS -20 @T A=125℃ Cob IR V= = -50mA,f CE=-6V,IC 0.50 200MHz VCB=-20V,I = = E 0,f 1MHz 120 0.85 0.70 0.5 40 10 MHz 0.9 0.92 pF NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. CLASSIFICATION OF hFE 2- Thermal Resistance From Junction to Ambient Rank Range Marking 2012-06 2012-0 Q R 120-205 180-315 IQ IR WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1073THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-89 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry 0.031(0.8) Typ. .063(1.60) .055(1.40) Dimensions in inches and (millimeters) ina • Epoxy : UL94-V0 rated flame retardant .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 .061REF • Polarity : Indicated by cathode band (1.55)REF • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .167(4.25) Marking Code Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH .102(2.60) .154(3.91) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage .023(0.58) 14 VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .016(0.40) 20 Peak Forward Surge Current 8.3 ms single half sine-wave .047(1.2) superimposed on rated load (JEDEC method) .031(0.8) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 13 30 14 15 .091(2.30) 40 50 16 60 18 80 10 100 115 150 120 200 Vo 21 28 35 42 56 70 105 140 Vo 30 40 50 60 80 100 150 200 Vo 1.0 30 40 120 -55 to +125 Am ℃ P -55 to +150 ℃ - 65 to +175 .197(0.52) .017(0.44) .013(0.32) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH .014(0.35) .118TYP 0.9 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ (3.0)TYP Rated DC Blocking Voltage Am @T A=125℃ IR 10 ℃ UN Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC Rev.C CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1073 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Packing capability, low forward voltage drop. • High current Device PN (3) (1) (2) surge capability. • High 2SB1073 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) high-speed switching. • Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Marking for any errors or inaccuracies. Data sheet specifications and its information Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V V RRM contained are intended to provide a product description only. "Typical" parameters V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) use of any product or circuit. ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% -55 to +125 Operating Temperature Range TJ WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature Range TSTG -55 to +150 - 65 to +175 life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U applications where a failure or malfunction of component or circuitry may directly V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in 10 NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.