WILLAS FM120-M+ THRU M7002TTD03 FM1200-M+ WBFBP-03A Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. MOSFET( N-Channel ) • Low profile surface mounted application in order to optimize board space. DESCRIPTION • Low power loss, high efficiency. High cellcurrent density, DMOS technology. These drop. products have been designed to capability, low forward voltage • High High surge capability. • minimize on-state resistance while provide rugged, reliable, and fast switching • Guardring for overvoltage protection. performance. They can be used in most applications requiring up to 400mA DC switching. • Ultra high-speed epitaxial planar chip, metal junction. • Silicon and can deliver pulsed currents up tosilicon 2A. These products are particularly suited • Lead-free parts meet environmental standards of D SOD-123H WBFBP-03A TOP (1.6×1.6×0.5) 0.146(3.7) unit: mm 0.130(3.3) 0.012(0.3) Typ. G S 0.071(1.8) 0.056(1.4) D 1. GATE BACK 2. SOURCE for low voltage, low current MIL-STD-19500 /228 applications such as small servo motor control, power 3. DRAIN for packing code suffix "G" applications. • RoHS product MOSFET gate drivers, and other switching Halogen free product for packing code suffix "H" S Mechanical data FEATURES • Epoxy : UL94-V0 rated flame retardant High density cell design for low RDS(ON) : Molded plastic, SOD-123H • Case , Voltage controlled small signal switch • Terminals :Plated terminals, solderable per MIL-STD-750 G 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Rugged and reliable • Polarity : Indicated cathode band High saturation currentby capability Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram APPLICATION N-ChannelMAXIMUM Enhancement Mode Field Effect Transistor CHARACTERISTICS RATINGS AND ELECTRICAL For at portable equipment:(i.e. Mobile MD,CD-ROM, Ratings 25℃ ambient temperature unlessphone,MP3, otherwise specified. Single phase half Note wave,book 60Hz,PC, resistive DVD-ROM, etc.)of inductive load. For capacitive load, derate current by 20% MARKING: 72 Pb-Free package is available SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS D RoHS Marking Code product for packing code suffix ”G” 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM Halogen free product for packing code suffix “H” 72 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 150 200 Volts Maximum Average Forward Rectified Current IO IFSM G 100S Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated RATINGS(T load (JEDEC method) MAXIMUM a=25℃ Typical Thermal Resistance (Note 2) Symbol unless otherwise noted) RΘJA Typical Junction Capacitance (Note 1) Drain-Source Voltage V 1.0 30 DS Operating Temperature Range CJ Parameter TJ 40 120 -55 to +125 ID PD Maximum Drain Current - Pulsed CHARACTERISTICS Power Dissipation Maximum Forward Voltage at 1.0A DC RθJA PF V ℃ V 115 VF 0.50 Thermal Resistance from Junction to Ambient 0.70 ℃ mA 0.85 J Blocking Voltage Rated DC 10 Tstg ℃/W Units 60 -55 to +150 150 0.5 NOTES: Value SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ T Amps ±20 - 65 to +175 VGSS Continuous Storage Temperature Range Gate-Source Voltage -TSTG Amps IR Junction@T Temperature A=125℃ Storage Temperature 833 150 -55-150 mW 0.9 ℃/W ℃ 0.92 Volts mAmps ℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU M7002TTD03 FM1200-M+ WBFBP-03A Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) • Batch process design, excellent power dissipation offers Symbol better reverse leakage current and thermal resistance. Test conditions Parameter Min SOD-123H Typ • Low profile surface mounted application in order to VGS=0V,ID=10μA Drain-Source Breakdown optimize board space. Voltage V(BR)DSS • Low power loss, high efficiency. • High current capability, V(GS)th drop. Gate-Threshold Voltage* low forward voltage High surge capability. • lGSS Gate-Body Leakage • Guardring for overvoltage protection. switching. • Ultra IDSS Zero Gatehigh-speed Voltage Drain Current • Silicon epitaxial planar chip, metal silicon junction. meet environmental standards of • Lead-free ID(ON) On-state Drainparts Current* MIL-STD-19500 /228 for packing code suffix "G"RDS(on) • RoHS product Drain-Source On-Resistance* Halogen free product for packing code suffix "H" Mechanical data Drain-Source On- Voltage * VDS(on) V 60 0.146(3.7) 0.130(3.3) VDS=VGS, ID=250μA 0.012(0.3) Typ. 1 VDS=0V, VGS=±25V ±100 VDS=60V, VGS=0V 1 0.071(1.8) 0.056(1.4) 500 VDS=60V,VGS=0V,Tj=125℃ VGS=10V, VDS=7V 500 nA μA mA VGS=10V, ID=500mA 1 7.2 VGS=5V, ID=50mA 1 7.2 VGS=10V, ID=500mA 3.75 0.040(1.0) 0.024(0.6) Ω V 0.375 80 0.031(0.8) Typ. 1.2 ms V 50 Ciss • Polarity : Indicated by cathode band Coss Output Capacitance Position : Any • Mounting Reverse Transfer Capacitance Crss • Weight : Approximated 0.011 gram Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qd VDS=25V, VGS=0V,f=1MHz Dimensions in inches and (millimeters) 25 pF 5 VDS =30V, VGS =10V, 1 nC 25 I =250mA D MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 5 Ratings at 25℃ ambient temperature unless otherwise specified. *Pulsephase test ,half pulse width≤300μs, duty cycle≤2% . load. Single wave, 60Hz, resistive of inductive Unit 60 VGS=0V,ID=3mA • Epoxy : UL94-V0 rated flame retardant VGS=5V, ID=50mA : Molded plastic, SOD-123H • CaseTranconductance* VDS=10V, ID=200mA gfs Forward 0.031(0.8) Typ. , IS=115mA, VGS=0V VSDper MIL-STD-750 Diode Forward Voltage • Terminals :Plated terminals, solderable Method 2026 Input Capacitance Max For capacitive load, TIME derate current by 20% SWITCHING Turn-on Time RATINGS SYMBOL VDDFM130-MH =25V,RGFM140-MH =25Ω FM150-MH FM160-MH FM180-MH FM1100-MH20FM1150-MH FM1200-MH UNIT td(on) FM120-MH Marking Code 12 ID=500mA,V 13 14 15 GEN=10V 20 30 40 50 Maximum Recurrent Turn-off TimePeak Reverse Voltage td(off) V RRM Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range RL=50Ω 16 60 18 80 10 100 115 40 150 ns120 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.