WILLAS M7002TTD03

WILLAS
FM120-M+
THRU
M7002TTD03
FM1200-M+
WBFBP-03A
Plastic-Encapsulate
MOSFETS
1.0A SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
MOSFET(
N-Channel )
• Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
• Low power loss, high efficiency.
High
cellcurrent
density,
DMOS technology.
These drop.
products have been designed to
capability,
low forward voltage
• High
High
surge
capability.
•
minimize on-state resistance while provide rugged, reliable, and fast switching
• Guardring for overvoltage protection.
performance.
They can
be used in most applications requiring up to 400mA DC
switching.
• Ultra high-speed
epitaxial
planar
chip, metal
junction.
• Silicon
and
can deliver
pulsed
currents
up tosilicon
2A. These
products are particularly suited
• Lead-free parts meet environmental standards of
D
SOD-123H
WBFBP-03A
TOP
(1.6×1.6×0.5)
0.146(3.7)
unit: mm
0.130(3.3)
0.012(0.3) Typ.
G
S
0.071(1.8)
0.056(1.4)
D
1. GATE
BACK
2. SOURCE
for low
voltage, low current
MIL-STD-19500
/228 applications such as small servo motor control, power
3. DRAIN
for packing
code suffix
"G" applications.
• RoHS product
MOSFET
gate drivers,
and other
switching
Halogen free product for packing code suffix "H"
S
Mechanical data
FEATURES
• Epoxy : UL94-V0 rated flame retardant
High
density
cell design for low RDS(ON)
: Molded plastic, SOD-123H
• Case
,
Voltage
controlled
small
signal switch
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
G
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Rugged and reliable
• Polarity
: Indicated
cathode band
High
saturation
currentby
capability
Dimensions in inches and (millimeters)
• Mounting Position : Any
•
Weight : Approximated 0.011 gram
APPLICATION
N-ChannelMAXIMUM
Enhancement
Mode Field
Effect
Transistor CHARACTERISTICS
RATINGS
AND
ELECTRICAL
For at
portable
equipment:(i.e.
Mobile
MD,CD-ROM,
Ratings
25℃ ambient
temperature
unlessphone,MP3,
otherwise specified.
Single
phase half Note
wave,book
60Hz,PC,
resistive
DVD-ROM,
etc.)of inductive load.
For capacitive load, derate current by 20%
MARKING: 72
Pb-Free package
is available
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
D
RoHS
Marking
Code product for packing code suffix ”G”
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Halogen free product for packing code suffix “H”
72
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
G 100S
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated RATINGS(T
load (JEDEC method)
MAXIMUM
a=25℃
Typical Thermal Resistance (Note 2)
Symbol
unless otherwise noted)
RΘJA
Typical Junction Capacitance (Note 1)
Drain-Source Voltage
V
1.0
30
DS
Operating
Temperature Range
CJ
Parameter
TJ
40
120
-55 to +125
ID
PD
Maximum Drain Current - Pulsed
CHARACTERISTICS
Power Dissipation
Maximum Forward Voltage at 1.0A DC
RθJA
PF
V
℃
V
115
VF
0.50
Thermal Resistance from Junction to Ambient
0.70
℃
mA
0.85
J Blocking Voltage
Rated DC
10
Tstg
℃/W
Units
60 -55 to +150
150
0.5
NOTES:
Value SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
T
Amps
±20
- 65 to +175
VGSS
Continuous
Storage
Temperature Range Gate-Source Voltage -TSTG
Amps
IR
Junction@T
Temperature
A=125℃
Storage Temperature
833
150
-55-150
mW
0.9
℃/W
℃
0.92
Volts
mAmps
℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
M7002TTD03
FM1200-M+
WBFBP-03A
Plastic-Encapsulate
MOSFETS
1.0A SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
• Batch process design, excellent power dissipation offers
Symbol
better reverse
leakage current and thermal
resistance. Test conditions
Parameter
Min
SOD-123H Typ
• Low profile surface mounted application in order to VGS=0V,ID=10μA
Drain-Source
Breakdown
optimize board
space. Voltage
V(BR)DSS
• Low power loss, high efficiency.
• High current capability,
V(GS)th drop.
Gate-Threshold
Voltage* low forward voltage
High
surge
capability.
•
lGSS
Gate-Body Leakage
• Guardring for overvoltage protection.
switching.
• Ultra
IDSS
Zero
Gatehigh-speed
Voltage Drain
Current
• Silicon epitaxial planar chip, metal silicon junction.
meet environmental standards
of
• Lead-free
ID(ON)
On-state
Drainparts
Current*
MIL-STD-19500 /228
for packing code suffix "G"RDS(on)
• RoHS product
Drain-Source
On-Resistance*
Halogen free product for packing code suffix "H"
Mechanical data
Drain-Source On- Voltage *
VDS(on)
V
60
0.146(3.7)
0.130(3.3)
VDS=VGS, ID=250μA
0.012(0.3) Typ.
1
VDS=0V, VGS=±25V
±100
VDS=60V, VGS=0V
1
0.071(1.8)
0.056(1.4)
500
VDS=60V,VGS=0V,Tj=125℃
VGS=10V, VDS=7V
500
nA
μA
mA
VGS=10V, ID=500mA
1
7.2
VGS=5V, ID=50mA
1
7.2
VGS=10V, ID=500mA
3.75
0.040(1.0)
0.024(0.6)
Ω
V
0.375
80
0.031(0.8) Typ.
1.2
ms
V
50
Ciss
• Polarity
: Indicated by cathode band Coss
Output
Capacitance
Position
: Any
• Mounting
Reverse
Transfer
Capacitance
Crss
• Weight
: Approximated 0.011 gram
Total
Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qd
VDS=25V, VGS=0V,f=1MHz Dimensions in inches and (millimeters) 25
pF
5
VDS =30V, VGS =10V,
1
nC
25
I =250mA
D
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
5
Ratings at 25℃ ambient temperature unless otherwise specified.
*Pulsephase
test ,half
pulse
width≤300μs,
duty cycle≤2%
. load.
Single
wave,
60Hz, resistive
of inductive
Unit
60
VGS=0V,ID=3mA
• Epoxy : UL94-V0 rated flame retardant
VGS=5V, ID=50mA
: Molded plastic, SOD-123H
• CaseTranconductance*
VDS=10V, ID=200mA
gfs
Forward
0.031(0.8) Typ.
,
IS=115mA, VGS=0V
VSDper MIL-STD-750
Diode
Forward
Voltage
• Terminals
:Plated
terminals, solderable
Method 2026
Input Capacitance
Max
For
capacitive load, TIME
derate current by 20%
SWITCHING
Turn-on Time RATINGS
SYMBOL
VDDFM130-MH
=25V,RGFM140-MH
=25Ω FM150-MH FM160-MH FM180-MH FM1100-MH20FM1150-MH FM1200-MH UNIT
td(on) FM120-MH
Marking Code
12 ID=500mA,V
13
14
15
GEN=10V
20
30
40
50
Maximum
Recurrent
Turn-off
TimePeak Reverse Voltage
td(off)
V
RRM
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
RL=50Ω
16
60
18
80
10
100
115
40 150
ns120
200
Volts
21
28
35
42
56
70
105
140
Volts
30
40
50
60
80
100
150
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.