BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline FeaturesDIODE FAST SWITCHING • Batch process design, excellent power dissipation offers FEATURES z z z z z better reverse leakage current and thermal resistance. Fast• Low Switching Speedmounted application in order to profile surface optimize board space. Ideally Suited for Automatic Surface Mount Package • Low power loss, high efficiency. For •General Purpose Switching Applications High current capability, low forward voltage drop. surge capability. • Highpackage Pb-Free is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-323 SOD-123H Insertion 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Polarity: Color band denotes cathode end Mechanical data 0.040(1.0) MARKING: BAV19WS: A8 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy BAV20WS: T2 SOD-123H : Molded plastic, • Case 0.031(0.8) Typ. 0.031(0.8) Typ. , BAV21WS: T3 • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum RatingsMethod and Electrical Characteristics, Single Diode @Ta=25℃ 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Parameter Symbol BAV19WS BAV20WS BAV21WS Unit • Mounting Position : Any 120 200 250 V VRM Non-Repetitive Reverse Voltage • WeightPeak : Approximated 0.011 gram Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. DC Blocking Voltage R Single phase half wave, 60Hz, resistive of inductive V load. For capacitive load, derate current by 20% VR(RMS) RMS Reverse Voltage RATINGS IFM Marking Code Average Output Current MaximumRectified Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak Forward Surge Current @t=1.0ms 250 V 71 106 141 V IVORRM 12 20 13 30 14 40 VRMS 14 21 VDC 20 30 IFSM @ t=1.0s IO Maximum Average Forward Rectified Current 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Forward Continuous Current Maximum DC Blocking Voltage 100 Repetitive Peak Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave Power Dissipation superimposed on rated load (JEDEC method) Thermal Resistance Junction Typical Thermal Resistance (Note 2)to 120 200 V 28 2.535 42 56 70 105 140 V 40 0.550 60 80 100 A 150 200 V 1.0 30 40 120 500 -55 to +125 TSTG Storage Temperature Range 10 115 100 mA 150 250 TJ Operating Temperature Range 18 80 IFSM Pd CJ Storage Temperature 16 60 625 RΘJA TSTG mA 15 200 50 IFRM RθJA Typical Junction Capacitance (Note 1) Ambient 400 -55~+150 A mW ℃ ℃/W -55 to +150 A mA - 65 to +175 ℃ Electrical Ratings @Ta=25℃ CHARACTERISTICS Parameter Maximum Average Reverse Current at @T A=25℃ Symbol @T A=125℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Forward voltage NOTES: IR Max 0.70 1.0 VF2 1.25 Reverse BAV19WS 2- Thermalcurrent Resistance From Junction to Ambient BAV20WS 0.50 Typ VF1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min Unit 0.5 10 V 0.1 IR BAV21WS 0.1 μA 0.1 0.92 V m IF=0.1A IF=0.2A VR=150V VR=200V CT 5 pF Reverse recovery time trr 50 ns 2012-1 Conditions VR=100V Capacitance between terminals 2012-06 0.9 0.85 VR=0V,f=1MHz IF=IR=30mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Forward Characteristics planar chip, metal silicon junction. • Silicon epitaxial 400 • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Typical Characteristics BAV19WS 1000 MIL-STD-19500 /228 300 • RoHS product for packing code suffix "G" (mA) • Epoxy : UL94-V0 rated flame retardant 30 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 (nA) REVERSE CURRENT IR Ta =2 5℃ Ta=25℃ 0.031(0.8) Typ. 10 Dimensions in inches and (millimeters) 1 12 20 13 30 Maximum RMS Voltage VRMSTa=25℃ 14 21 Maximum DC Blocking Voltage VDC 20 30 f=1MHz 1.2 1.0 superimposed on rated load (JEDEC method) PD CAPACITANCE BETWEEN TERMINALS CT (pF) Peak Forward Surge Current 8.3 ms single half sine-wave RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) 0.8 80 Storage Temperature Range TSTG CHARACTERISTICS VR 100 120 (V) 250 15 50 16 18 10 Power Derating Curve 60 80 100 28 35 42 56 40 50 60 80 115 150 120 200 V 70 105 140 V 100 150 200 V 1.0 30 200 40 120 150 A ℃ P -55 to +150 100 A - 65 to +175 SYMBOL FM120-MH FM130-MH50FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 0.4 10 @T A=125℃ REVERSE VOLTAGE 300 14 40 -55 to +125 TJ Operating Temperature Range 60 (mW) IO IFSM Maximum Average Forward Rectified Current 0 5 Rated DC Blocking Voltage 40 REVERSE VOLTAGE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Characteristics VRRM Maximum Recurrent PeakCapacitance Reverse Voltage 1.4 0.6 0.031(0.8) Typ. 3 VOLTAGE (V) Ratings at 25℃ ambientFORWARD temperature unlessVFotherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 0.040(1.0) 0.024(0.6) 30 0.1 MAXIMUM AND ELECTRICAL CHARACTERISTICS 0.4 0.6 RATINGS 0.8 1.0 1.2 1.4 0 20 Marking Code Ta=100℃ 0.3 POWER DISSIPATION Method 2026 • Polarity : Indicated by cathode band • 3Mounting Position : Any • Weight : Approximated 0.011 gram 1 0.2 0.071(1.8) 0.056(1.4) Characteristics 100 Mechanical data Ta =1 00 ℃ FORWARD CURRENT IF Halogen free product for packing code suffix "H" 100 10 Reverse VR 15 (V) IR 0.50 20 0 0.70 0.9 0.85 0.92 0.5 0 25 50 10 75 AMBIENT TEMPERATURE V 100 Ta 125 150 m (℃ ) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAV19WS FM120-M+ THRU BAV20WS BAV21WS FM1200-M+ WILLAS SOD-323 Diodes-20V- 200V 1.0A SURFACEPlastic-Encapsulate MOUNT SCHOTTKY BARRIER RECTIFIERS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOD-323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .091(2.30) .010(0.25) .016(0.40) Mechanical data .075(1.90) .059(1.50) .045(1.15) • .057(1.45) .106(2.70) MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.040(1.0) 0.024(0.6) .047(1.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .031(0.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .008(0.20) .004(0.10) 40 120 -55 to +125 CHARACTERISTICS Amps ℃/W PF ℃ - 65 to +175 .016(0.40) 0.50 .010(0.25) ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Amps -55 to +150 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ IR 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: .010(0.25)MIN. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.DCORP. WILLAS ELECTRONIC CORP. BAV19WS FM120-M+ BAV20WS THRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Ordering Information: mounted application in order to • Low profile surface optimize board space. Packing 0.146(3.7) high efficiency. • Low power loss,Device PN 0.130(3.3) (1) forward (2) current capability, low voltage drop. • High Part Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape&Reel Packing for overvoltage protection. • Guardring high-speed switching. • Ultra(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of /228 MIL-STD-19500 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. WILLAS reserves the right to make changes without notice to any product For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM for any errors or inaccuracies. Data sheet specifications and its information Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amps Maximum Average Forward Rectified Current IO 1.0 Peak Forwardand do vary in different applications and actual performance may vary over time. Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) WILLAS does not assume any liability arising out of the application or ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT life‐saving implant or other applications intended for life‐sustaining or other related Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.