WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” z Low Collector-Emitter Saturation Voltage z Moisture Sensitivity Level 1 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA Parameter ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=50µA,IE 0 V(BR)CBO 100 V Collector-emitter breakdown voltage = IC=1mA,IB 0 V(BR)CEO 80 V Emitter-base breakdown voltage = IE=50µA,IC 0 V(BR)EBO 5 V Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance = VCB=80V,IE 0 ICBO = VEB=4V,IC 0 IEBO hFE = VCE=3V, IC 500mA 82 fT Cob µA 1 µA 390 IC=500mA,IB=20mA VCE(sat) 1 0.4 V VCE=10V,IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING 2012-0 DF WILLAS ELECTRONIC CORP. WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic 4.5mA COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 2.5mA 5mA VCE= 3V 2mA 1.5mA 400 1.0mA 400 300 o 200 Ta=25 C 200 100 IB=0.5mA 0 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE 6 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 600 400 VCEsat —— 400 β=25 800 10 COLLECTOR CURRENT (V) VBEsat —— IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) o Ta=100 C DC CURRENT GAIN 600 hFE —— IC 500 hFE 4mA 3.5mA 3mA IC (mA) 800 Ta=100℃ 100 IC 1000 (mA) IC β=25 300 200 Ta=100℃ 100 200 Ta=25℃ 0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1000 (mA) IC 1000 10 100 Cob / Cib —— IC 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 250 C 200 CAPACITANCE TRANSITION FREQUENCY 1 COLLECTOR CURRENT fT (MHz) 300 200 IC 0 0.1 150 100 Cib 10 Cob 100 VCE=10V o Ta=25 C 50 0 20 40 60 80 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 600 —— IC 100 1 0.1 1 REVERSE VOLTAGE (mA) 10 V (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2012-0 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors Outline Drawing SOT-89 .181(4.60) .173(4.39) .063(1.60) .055(1.40) .061REF (1.55)REF .102(2.60) .091(2.30) .167(4.25) .154(3.91) .023(0.58) .016(0.40) .047(1.2) .031(0.8) .060TYP (1.50)TYP .197(0.52) .013(0.32) .017(0.44) .014(0.35) .118TYP (3.0)TYP Dimensions in inches and (millimeters) Rev.C 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SD1898THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Pb Free Product Package outline SOD-123H 0.146(3.7) Ordering power loss, Information: high efficiency. • Low 0.130(3.3) 0.012(0.3) Typ. low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) 2SD1898 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection. • Guardring 0.071(1.8) high-speed switching. • Ultra Note: (1) CASE:SOT‐89 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 product (3) CLASSIFICATION OF h RANK for packing code suffixFE "G" • RoHS Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. For capacitivespecification herein, to make corrections, modifications, enhancements or other load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMScontained are intended to provide a product description only. "Typical" parameters Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermaluse of any product or circuit. Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ Marking Code life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR or indirectly cause injury or threaten a life without expressed written approval mAmps 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: 1- Measured at 1such applications do so at their own risk and shall agree to fully indemnify WILLAS MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures . 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.