WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features TRANSISTOR (PNP)design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Power Transistor optimize board space. high Gain efficiency. • Low power z Excellent DCloss, current • High current capability, low forward voltage drop. z Low Collector-emitter Saturation Voltage • High surge capability. z Pb Free Product SOT-89 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE for overvoltage protection. • Guardring Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” epitaxial planar chip, metal silicon junction. • Silicon 2. COLLECTOR 0.071(1.8) 0.056(1.4) 3. EMITTER parts meet environmental standards of • Lead-free Halogen free product for packing code suffix “H” MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data MAXIMUM RATINGS : UL94-V0 (T rated flameunless retardantotherwise noted) • Epoxy a=25℃ • Case : Molded plastic, SOD-123H Symbol Parameter , • Terminals :Plated terminals, solderable per MIL-STD-750 VCBO Collector-Base Voltage Method 2026 0.040(1.0) 0.024(0.6) Value V Voltage VCEO • PolarityCollector-Emitter : Indicated by cathode band -20 Emitter-Base Voltage VEBO Position : Any • Mounting -6 V -3 A Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W 150 ℃ -55~+150 ℃ PC 0.031(0.8) Typ. Unit -30 : Approximated Current0.011 gram IC• WeightCollector V Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS R 0.031(0.8) Typ. θJA Ratings at 25℃ ambient temperature unless otherwise specified. Junction Temperature SingleTphase half wave, 60Hz, resistive of inductive load. j For capacitive load, derate current by 20% Storage Temperature T stg RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 otherwise ELECTRICAL CHARACTERISTICS (Ta=25℃ 14 21 28specified) 35 Maximum RMS Voltage VRMS unless Maximum DC Blocking Voltage VDC Parameter Maximum Average Forward Rectified Current 30 40 Test conditions 50 10 100 115 150 120 200 V 42 56 70 105 140 V 150 200 V 60 Min V(BR)CBO IC=-50µA,IE=0 -30 Collector-emitter breakdown voltage IFSM V(BR)CEO IC=-1mA,IB=0 -20 VR(BR)EBO ΘJA C=0 IE=-50µA,I -6 superimposed on rated load (JEDEC method) Emitter-base breakdown Typical Thermal Resistance (Notevoltage 2) Typical Junction Capacitance (Note 1) Collector cut-off current Emitter cut-off current Storage Temperature Range CHARACTERISTICS Collector-emitter saturation voltage Maximum Forward Voltage at 1.0A DC Collector output capacitance Maximum Average Reverse Current at @T A=25℃ Transition frequency E=0 VCB=-20V,I IEBO VEB=-5V,IC=0 hFE VCE=-2V, IC=-0.5A TSTG DC current gain Rated DC Blocking Voltage J ICCBO TJ Operating Temperature Range IO 20 18 80 Collector-base breakdown voltage Peak Forward Surge Current 8.3 ms single half sine-wave Symbol 16 60 -55 to +125 Typ 80 1.0 30 100 Max Unit A V 40 120 - 65 to +175 82 V A V ℃ -0.5 µA -0.5 µA -55 to +150 390 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL IC=-1.5A,I -0.45 V VCE(sat) FM120-MH B=-0.15A VF Cob @T A=125℃ NOTES: IR fT 0.50 VCB=-20V,IE=0, f=1MHz 0.70 0.5 VCE=-6V,IC=-50mA, 10 f=30MHz 60 120 0.85 pF 0.9 0.92 V m MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE RANK P Q R RANGE 82–180 120–270 180–390 MARKING BFP BFQ BFR 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Static Characteristic -600 better reverse -500 -1.2mA application in order to • Low profile surface mounted IC FE C COMMON EMITTER VCE=-2V -1.05mA optimize board space. -400 COLLECTOR CURRENT • Low power loss, high efficiency.-0.9mA High current capability, low forward voltage drop. • -300 -0.75mA • High surge capability. -0.6mA Guardring for overvoltage protection. • -200 -0.45mA • Ultra high-speed switching. -0.3mAjunction. Silicon epitaxial planar chip, metal silicon • -100 • Lead-free parts meet environmental standards I =-0.15mAof SOD-123H Ta=100℃ hFE (mA) • Batch process —— I Packagehoutline 1000 COMMON -1.5mA design, excellent power dissipation offers EMITTER -1.35mA ℃ Ta=25 leakage current and thermal resistance. DC CURRENT GAIN Features Pb Free Product 0.146(3.7) 0.130(3.3) Ta=25℃ 0.012(0.3) Typ. 300 0.071(1.8) 0.056(1.4) B MIL-STD-19500 /228 -0 RoHS product code suffix "G" -4 -0 -1 for packing -2 -3 COLLECTOR-EMITTER VOLTAGE (V) "H" CE Halogen free product for packing code Vsuffix • Mechanical data V CEsat 100 -5 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Method 2026 • Polarity : Indicated by cathode band T =100 ℃ • Mounting Position : Any T =25℃ • Weight : Approximated 0.011 gram -10 a a RATINGS IC —— IC 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. -800 Dimensions T =25℃ in inches and (millimeters) a Ta=100 ℃ -600 β=10 -200 -1 -10 -100 -1000 COLLECTOR CURRENT IC -3000 (mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH fT —— IC VBE VRRM 12 20 13200 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 T =2 5℃ a Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA -10 Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Storage Temperature Range -1 TSTG -300 -600 -900 BASE-EMMITER VOLTAGE VBE (mV) CHARACTERISTICS Maximum Forward Voltage at 1.0A C /C DC—— VCB/VEB ob ib 500 Maximum Average Reverse Current at @T A=25℃ VF 600 IR f=1MHz IE=0/IC=0 (pF) 100 CAPACITANCE C 2- Thermal Resistance From Junction to Ambient 2012-0 COMMON EMITTER -55 to +150 VCE= -6V - 65 to +175Ta=25℃ -10 -100 0.50 IC (mA) 0.70 PC —— Ta 0.5 Cob 0.9 0.85 0.92 10 500 Ta=25 ℃ Cib 10 -0.1 40 120 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-06 30 COLLECTOR CURRENT NOTES: 10 -7 -1200 @T A=125℃ Rated DC Blocking Voltage 1.0 30 -55 to +125 TJ COMMON EMITTER VCE=-2V Operating Temperature Range -0 TRANSITION FREQUENCY -100 T =1 00℃ a COLLECTOR CURRENT 100 fT (mA) IC IO Maximum Average Forward Rectified Current (MHz) Maximum Recurrent Peak Reverse Voltage -1000 (mA) -1000 Ratings at 25℃ ambient temperature unless otherwise specified. β=10 Single phase half wave, 60Hz, resistive of inductive load. -1 -3000 -1 -10 -100 -1000 For capacitive load, derate current by 20% IC (mA) COLLECTOR CURRENT Marking Code -3000 VBEsat —— -3000 -1000 IC -400 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS COLLECTOR POWER DISSIPATION PC (mW) -100 -1200 Epoxy : UL94-V0 rated flame retardant • -1000 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 -100 -10 COLLECTOR CURRENT IC —— -1 400 300 200 100 0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 100 125 150 WILLAS T (℃) ELECTRONIC CORP AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-89 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .181(4.60) retardant • Epoxy : UL94-V0 rated flame .173(4.39) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .063(1.60) Method 2026 .055(1.40) .061REF • Polarity : Indicated by cathode band (1.55)REF • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .167(4.25) Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VRRM Maximum Recurrent Peak Reverse Voltage .154(3.91) 12 20 13 30 .102(2.60) 14 15 .091(2.30) 40 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage 14 V.023(0.58) RMS 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage .016(0.40) 20 VDC 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .047(1.2) superimposed on rated load (JEDEC method) .031(0.8) Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 .197(0.52) .017(0.44) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH .013(0.32) 0.9 0.92 0.50 0.70 0.85 .014(0.35) .118TYP VF 0.5 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage (3.0)TYP IR 10 @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC Rev.C CORP WILLAS ELECTRONIC CORP.