WILLAS FM120-M+ BCX51 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile TRANSISTOR (PNP) SOT-89 optimize board space. • Low power loss, high efficiency. FEATURES • High current capability, low forward voltage drop. High surge capability. z NPN •Complements to BCX54,BCX55,BCX56 • Guardring for overvoltage protection. z Low Voltage • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. z High •Current • Lead-free parts meet environmental standards of package is/228 available z Pb-Free MIL-STD-19500 RoHS product for packing code suffix "G" • RoHS product for packing code suffix ”G” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR 3. EMITTER Halogen free product for packing code suffix "H" Halogen free productdata for packing code suffix “H” Mechanical Moisture Sensitivity Level 1 retardant : UL94-V0 rated flame • Epoxy z 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H APPLICATIONS , • Terminals :Plated terminals, solderable per MIL-STD-750 z Medium Power Method General Purposes 2026 z Driver Stages: Indicated of AudiobyAmplifiers • Polarity cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Dimensions in inches and (millimeters) im MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS BCX53-10:AK, BCX53-16:AL Ratings atBCX53:AH, 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 20 Pr el Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 13 30 noted) MAXIMUM RATINGS (Ta=25℃ unless otherwise 14 21 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage Symbol VDC Parameter Collector-Base Voltage superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range VCEO RΘJA CJ BCX51 TJ BCX53 CHARACTERISTICS Emitter-Base Voltage Maximum Forward Voltage at 1.0A DC IC TSTG Collector Current Collector PC DC Blocking Rated VoltagePower RθJA NOTES: VF Dissipation @T A=125℃ Temperature Tj 1- Measured at 1Junction MHZ and applied reverse voltage of 4.0 VDC. 2012-06 2012-0 IR Thermal Resistance From Junction To Ambient 2- T Thermal Resistance From Junction to Ambient Storage Temperature stg 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 80 100 150 200 Value 60 Unit 1.0 30 V -100 -45 -55 to +125 40 120 V -80 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH-5FM140-MH FM150-MH V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ 15 50 -45 IFSM BCX53 Collector-Emitter Voltage Storage Temperature Range VEBO 30 BCX51 Peak Forward Surge Current 8.3 ms single half sine-wave VCBO 20 IO Maximum Average Forward Rectified Current 14 40 0.50 0.70 0.85 -1 A 0.5 500 mW 10 250 ℃/W 150 ℃ -55~+150 ℃ 0.9 0.92 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX51 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H unless otherwise specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ surface mounted application in order to • Low profile optimize board space. power loss, high efficiency. • LowParameter Symbol T est conditions • High current capability, low forward voltage drop. • High surge capability. BCX51 for overvoltage protection. V(BR)CBO • Guardring IC=-100µA,IE=0 Collector-base breakdown voltage • Ultra high-speed switching. BCX53 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of BCX51 MIL-STD-19500 /228 voltage Collector-emitter breakdown • RoHS product for packing code suffix "G" V(BR)CEO* V(BR)EBO Unit 0.012(0.3) Typ. V 0.071(1.8) 0.056(1.4) -100 -45 V -80 IE=-100µA,IC=0 -5 V -0.1 -0.1 0.031(0.8) Typ. hFE(1)* VCE=-2V, IC=-5mA 0.040(1.0) 0.024(0.6) µA µA 0.031(0.8) Typ. 63 hFE(2)* VCE=-2V, IC=-150mA hFE(3)* VCE=-2V, IC=-0.5A VCE(sat)* IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE* VCE=-2V, IC=-0.5A -1 V Transition frequency fT • Polarity : Indicated by cathode band • Mounting Position : Any Collector-emitter saturation voltage • Weight : Approximated 0.011 gram 63 40 VCE=-5V,IC=-10mA, f=100MHz 50 im Ratings at 25℃ ambient temperature unless otherwise specified. * Pulse Test Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% CLASSIFICATIONRATINGS OF hFE(2) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage RANK Maximum DC Blocking Voltage 12 13 20 30 VRRM BCX51-10 14 21 VRMS BCX51 BCX53 VDC RANGE 63–250 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 20 28 30 40 63–160 IFSM RΘJA Typical Thermal Resistance (Note 2) BCX53-10 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 56 70 105 140 50 60 80 100 150 200 BCX51-16 BCX53-16 IO Maximum Average Forward Rectified Current MHz SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code 250 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Max ina ry Method 2026 Typ -45 BCX53 : UL94-V0 • Epoxy VCB=-30V,IE=0 Collector cut-off currentrated flame retardant ICBO Case : Molded plastic, SOD-123H • VEB=-5V,IC=0 IEBO Emitter cut-off current , • Terminals :Plated terminals, solderable per MIL-STD-750 DC current gain 0.146(3.7) 0.130(3.3) IC=-10mA,IB=0 Halogen free product for packing code suffix "H" Mechanical Emitter-base breakdowndata voltage Min 1.0 30 100–250 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS BCX51 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .061REFper MIL-STD-750 , • Terminals :Plated terminals, solderable .063(1.60) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Method 2026 .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .167(4.25) RATINGS .102(2.60) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH.091(2.30) 12 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Pr el .154(3.91) Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage .023(0.58) 20 VRRM .016(0.40) IO Maximum Average Forward Rectified Current .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC IFSM RΘJA Typical Thermal Resistance (Note 2) TJ TSTG 40 120 -55 to +125 -55 to +150 .197(0.52) .013(0.32) - 65 to +175 .017(0.44) .014(0.35) .118TYPSYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYP VF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX51 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing low forward voltage drop. • High current capability, (3) High surge capability. •Part Number –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) high-speed switching. • Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM contained are intended to provide a product description only. "Typical" parameters V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) use of any product or circuit. ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ Pr el WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% -55 to +125 TJ WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range Storage Temperature Range TSTG -55 to +150 - 65 to +175 life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U applications where a failure or malfunction of component or circuitry may directly V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.