WILLAS FM120-M+ DAP222MTHRU FM1200-M+ SOT-723 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SWITCHING DIODE • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES • High surge capability. z Ultra •Small Surface Mounting Type Guardring for overvoltage protection. z Ultra •High Switching Applications Ultra Speed high-speed switching. Silicon epitaxial planar chip, metal silicon junction. z High •Reliability • Lead-free parts meet environmental standards of package is/228 available z Pb-Free MIL-STD-19500 RoHS product for packing code suffix "G" • RoHS product for packing code suffix ”G” SOT-723 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Halogen free productdata for packing code suffix “H” Mechanical z Moisture Sensitivity Level 1 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. MARKING: P : Indicated by cathode band • Polarity MAXIMUM RATINGS ( Ta: =25 Position Any ℃ unless otherwise noted ) • Mounting • Weight : Approximated 0.011 gram Symbol Parameter Value Ratings at 25℃ ambient temperature unless otherwise Working Peak Reverse Voltage specified. VRWM Single phase half wave, 60Hz, resistive of inductive load. RMS Reverse R(RMS) ForVcapacitive load, derate current byVoltage 20% IO Marking Code RATINGS Forward CurrentSYMBOL Continuous Peak Forward Current IFM Recurrent Peak Maximum Reverse Voltage PD Power Dissipation Maximum Average Forward Rectified Current RθJA VRRM 12 20 13 30 Junction Temperature superimposed on rated load (JEDEC method) Tj Typical Thermal Resistance (Note 2) Tstg Storage Temperature Typical Junction Capacitance (Note 1) 80 V 56 V 14 40 15 300 50 16 60 18 10 mA 80 100 115 150 120 200 Vo 28 354 42 56 70 105 140 Vo 60 80 100 150 200 Vo 40 50 IFSM CJ 150 RΘJA Parameter -55 to +125 CHARACTERISTICS Test conditions 0.50 Maximum Average Reverse Current at @T A=25℃ = VIRR 70V IR Rated DC Blocking Voltage Forward voltage NOTES: @T A=125℃ = IF 100mA VF 1- Measured at 1 MHZ and applied reverse voltage = = Ctot of 4.0 VDC.VR 6V,f 1MHz Total capacitance 2- Thermal Resistance From Junction to Ambient Reverse recovery time mW Am Am ℃ ℃/ ℃ P -55 to +150 ℃ - 65 to +175 ℃ Typ Min Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Reverse voltage = IVRF 100uA Maximum Forward Voltage at 1.0A DC V(BR) Reverse current A ℃/W 40 120 -55~+150 TSTG Symbol 1.0 30 833 Operating Temperature Range ELECTRICAL CHARACTERISTICS(Ta=25℃TJunless otherwise specified) Storage Temperature Range 150 IO Thermal Resistance from Junction to Ambient Peak Forward Surge Current 8.3 ms single half sine-wave V FM1100-MH FM1150-MH FM1200-MH UN FM120-MH FM130-MH FM140-MH FM150-MH mA 100 FM160-MH FM180-MH 14 21 Maximum Surge Current (t=1µs) IFSM RMS VoltageNon-Repetitive Peak ForwardVRMS Maximum DC Blocking Voltage 20 30 VDC Unit Peak Reverse Voltage 80 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr el Dimensions in inches and (millimeters) im VRRM 0.031(0.8) Typ. trr IF=5mA, VR=6V,RL=50Ω 0.70 80 V 0.9 0.85 0.5 10 0.1 µA 1.2 V 3.5 pF 4 ns 0.92 Vo mA 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DAP222M THRU FM1200-M+ SOT-723 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-723 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .049(1.25) .045(1.15) 0.031(0.8) Typ. 0.031(0.8) Typ. ina Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ry .030(0.75) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .049(1.25) .045(1.15) .006(0.15)MIN. MIL-STD-19500 /228 Mechanical data 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .034(0.85) Pb Free Product Dimensions in inches and (millimeters) Pr eli m MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .007(0.17) .003(0.07) 15 16 18 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 50 60 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .003(0.8) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) RΘJA CJ TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ .011(0.27) .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient IR .034(0.85) .030(0.45) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 10 m Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.C CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.