BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C BCX54-16 – BD BCX55-16 – BM BCX56-16 – BL E COMPLEMENTARY TYPES:BCX54 – BCX51 BCX55 – BCX52 C BCX56 – BCX53 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54 BCX55 BCX56 Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 45 60 100 V 45 60 80 Emitter-Base Voltage VEBO 5 V V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W -65 to +150 °C Operating and Storage Temperature Range Tj:Tstg UNIT ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage BCX54 BCX55 BCX56 V(BR)CBO 45 60 100 V IC =100µA Collector-Emitter Breakdown Voltage BCX54 BCX55 BCX56 V(BR)CEO 45 60 80 V IC =10mA* 5 Emitter-Base Breakdown Voltage V(BR)EBO V IE =10µA Collector Cut-Off Current ICBO 0.1 20 µA µA VCB =30V VCB =30V, Tamb =150°C Emitter Cut-Off Current IEBO 20 nA VEB =4V 0.5 V IC =500mA, IB =50mA* 1.0 V Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE –10 –16 Transition Frequency fT Output Capacitance Cobo 25 40 25 63 100 250 160 250 150 MHz IC =50mA, VCE =10V, f=100MHz 15 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 35 IC =500mA, VCE =2V* IC =5mA, VCE =2V* IC =150mA, VCE =2V* IC =500mA, VCE =2V* IC =150mA, VCE =2V* IC =150mA, VCE =2V* VCB =10V, f=1MHz