DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCX51; BCX52; BCX53 PNP medium power transistors Product specification Supersedes data of 1997 Jul 04 1999 Apr 19 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes • Driver stages of audio amplifiers. DESCRIPTION handbook, halfpage PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. 2 3 MARKING TYPE NUMBER 1 MARKING CODE TYPE NUMBER MARKING CODE BCX51 AA BCX52-16 AM BCX51-10 AC BCX53 AH BCX51-16 AD BCX53-10 AK BCX52 AE BCX53-16 AL BCX52-10 AG 1999 Apr 19 1 Bottom view 2 3 MAM297 Fig.1 Simplified outline (SOT89) and symbol. 2 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BCX51 − −45 V BCX52 − −60 V − −100 V − −45 V BCX53 VCEO MIN. collector-emitter voltage open base BCX51 BCX52 − −60 V BCX53 − −80 V − −5 V VEBO emitter-base voltage IC collector current (DC) − −1 A ICM peak collector current − −1.5 A IBM peak base current − −200 mA Ptot total power dissipation − 1.3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 94 K/W Rth j-s thermal resistance from junction to soldering point note 1 14 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 19 3 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V − − −100 nA ICBO collector cut-off current IE = 0; VCB = −30 V; Tj = 125 °C − − −10 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA hFE DC current gain VCE = −2 V; see Fig.2 IC = −5 mA 40 − − IC = −150 mA 63 − 250 IC = −500 mA 25 − − BCX51-10; BCX52-10; BCX53-10 63 − 160 BCX51-16; BCX52-16; BCX53-16 100 − 250 IC = −150 mA; VCE = −2 V; see Fig.2 DC current gain VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −500 mV VBE base-emitter voltage IC = −500 mA; VCE = −2 V − − −1 V fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz − 50 − MHz MBH730 160 handbook, full pagewidth VCE = −2 V hFE 120 80 40 0 −10−1 −1 −10 −102 Fig.2 DC current gain; typical values. 1999 Apr 19 4 −103 IC (mA) −104 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 19 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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