MMBT5551DW1T1(SOT 363)

WILLAS
FM120-M+
MMBT5551DW1T1
THRU
MOUNTRECTIFIERS
TRANSISTOR
DUAL
SMALLMOUNT
SIGNAL
SURFACE
1.0ANPN
SURFACE
SCHOTTKY
BARRIER
-20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FEATURE
optimize board space.
ƽ •We
declare
the
material
of product compliance with RoHS requirements.
Low
powerthat
loss,
high
efficiency.
6
package
is available
High current
capability,
low forward voltage drop.
•Pb-Free
High surge
capability.
•RoHS
product
for packing code suffix ”G”
Guardring for overvoltage protection.
•Halogen
free product for packing code suffix “H”
Ultra high-speed
switching.
•Moisture
Sensitivity
Level 1
epitaxial planar chip, metal silicon junction.
• SiliconMARKING
DEVICE
AND ORDERING INFORMATION
• Lead-free parts meet environmental standards of
Device
MIL-STD-19500
/228 Marking
5
0.146(3.7)
0.130(3.3)
4
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
3
SOT-363/SC-88
Shipping
RoHS product for packing code suffix "G"
• MMBT5551DW1T1
G1
3000/Tape&Reel
Halogen free product for packing code suffix "H"
Mechanical
MAXIMUM
RATINGSdata
Collector–Base Voltage
V CBO
Method 2026
EBO
Voltageby cathode V
• Emitter–Base
Polarity : Indicated
band
Mounting
Position
: Any
• Collector
Current
— Continuous
IC
• Weight : CHARACTERISTICS
Approximated 0.011 gram
THERMAL
Characteristic
MAXIMUM
160
Vdc
6.0
Vdc
600
mAdc
Derateload,
above
25°Ccurrent by 20%
For capacitive
derate
Thermal Resistance, Junction to Ambient
RATINGS
Total Device Dissipation
Marking Code
Alumina Substrate, (2) TA = 25°C
Maximum Recurrent Peak Reverse Voltage
Derate above 25°C
Maximum RMS Voltage
Thermal Resistance, Junction to Ambient
Maximum Junction
DC Blocking
andVoltage
Storage Temperature
Maximum Average Forward Rectified Current
Characteristic
superimposed on rated load (JEDEC method)
Dimensions in inches and
E (millimeters)
C
B
2
225
mW
1.8
556
mW/°C
°C/W
300 14
40
2.4
21
28
417
30
40
–55 to +150
mW
15
50
mW/°C
35
°C/W
50
°C
RθJA
Typical Junction
CapacitanceBreakdown
(Note 1) Voltage(3)
Collector–Emitter
Operating(ITemperature
Range
= 1.0 mAdc,
I = 0)
C
B
Storage Temperature Range
VRRM
VRMS
VDC
IO
IFSM
D
P12
20
13
30
14
RθJA
TJ ,20
Tstg
Collector–Base Breakdown Voltage
CHARACTERISTICS
CJ
TJ
18
80
10
100
115
150
120
200
Vo
42
56
70
105
140
Vo
60
80
100
150
200
Vo
@T A=125℃
IR
Collector Cutoff Current
( VatCB
= 120Vdc,
I E = reverse
0)
1- Measured
1 MHZ
and applied
voltage of 4.0 VDC.
-55 to +125
(BR)CEO
0.50
—
℃
Vdc
- 65 to +175
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
180
(BR)EBO
I CBO
V
I EBO
Vdc
—
0.70
V
( V CB = 120Vdc, I E = 0, T A=100 °C)
2012-0
160
Am
40
120
2- Thermal Resistance From Junction to Ambient
2012-06
Max
Am
P
-55 to +150
℃
℃
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH
(BR)CBO
Emitter–Base Breakdown Voltage
= 10 µAdc, I C = 0)
Min
1.0
30 Unit
V
Maximum Average Reverse Current at @T A=25℃
NOTES:
1
16
60
VF
Maximum Forward Voltage at 1.0A DC
Rated DC (IBlocking Voltage
Symbol
TSTG
(I C = 100 µAdc, I E = 0)
E
2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RΘJA
CHARACTERISTICS
TypicalOFF
Thermal
Resistance (Note 2)
0.031(0.8) Typ.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave
0.031(0.8) Typ.
0.040(1.0)
E1
0.024(0.6)
Symbol CHARACTERISTICS
Max
Unit
RATINGS AND ELECTRICAL
Total
Device
Dissipation
FR– 5unless
Board,otherwise
(1)
Ratings at
25℃
ambient
temperature
specified.
PD
A = 25°C
T
Single phase half wave, 60Hz, resistive of inductive load.
B1
C2
: UL94-V0 rated flame retardant
• EpoxyRating
Symbol
Value
Unit
• Case : Molded plastic, SOD-123H
140
Collector–Emitter Voltage
V CEO
,Vdc
• Terminals :Plated terminals, solderable per MIL-STD-750
0.85
0.9
0.92
0.5
6.0
—
Vo
10 Vdc
—
50
nAdc
—
50
µAdc
—
50
mA
nAdc
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT5551DW1T1
THRU
MOUNTRECTIFIERS
TRANSISTOR
DUAL
NPN
SMALLMOUNT
SIGNALSCHOTTKY
SURFACEBARRIER
1.0A
SURFACE
-20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
(T A = 25°C unless otherwise noted) (Continued)
ELECTRICAL
CHARACTERISTICS
overvoltage protection.
• Guardring for
Symbol
switching.
• Ultra high-speedCharacteristic
epitaxial planar chip, metal silicon junction.
• Silicon
ON
CHARACTERISTICS
• Lead-free
DC Currentparts
Gain meet environmental standards of
h
0.146(3.7)
0.130(3.3)
• Epoxy : UL94-V0 rated flame retardant
(I C = 50 mAdc, V CE = 5.0Vdc)
• Case : Molded plastic, SOD-123H
,
• Terminals
:PlatedSaturation
terminals,
solderable per MIL-STD-750
Collector–Emitter
Voltage
—
80
250
30
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
—
0.031(0.8) Typ.
Vdc
VCE(sat)
—
• Polarity : Indicated by cathode band
(I C = 50 mAdc, I B = 5.0 mAdc )
Position : Any
• Mounting
• Weight : Approximated 0.011 gram
0.15
Dimensions in inches and (millimeters)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
V
—
0.20
—
1.0
—
1.0
Vdc
BE(sat)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
(I C = 50 mAdc, I B = 5.0 mAdc)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
80
Unit
0.031(0.8) Typ.
Method
2026
(I C = 10 mAdc,
I B = 1.0
mAdc)
Max
––
FE
MIL-STD-19500 /228
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
product for packing code suffix "G"
• RoHS
Halogen free product for packing code suffix "H"
(I C = 10 mAdc, V CEdata
= 5.0 Vdc)
Mechanical
Min
0.012(0.3) Typ.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT5551DW1T1
THRU
MOUNTRECTIFIERS
TRANSISTOR
DUAL
NPN
SMALLMOUNT
SIGNALSCHOTTKY
SURFACEBARRIER
1.0A
SURFACE
-20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
h FE, DC CURRENT GAIN (NORMALIZED)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
500
• Low profile surface mounted application in order to
V CE = 1.0 V
optimize
board
space.
300
T J = +125°C
200 power loss, high efficiency.
• Low
+25°C
capability, low forward voltage drop.
• High current
100 surge capability.
• High
for overvoltage protection.
• Guardring–55°C
50
• Ultra high-speed switching.
30
epitaxial planar chip, metal silicon junction.
• Silicon
20
• Lead-free parts meet environmental standards of
V CE = 5.0 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
10 product for packing code suffix "G"
• RoHS
7.0
Halogen
free product for packing code suffix "H"
5.0
Mechanical
data
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
• Epoxy : UL94-V0 rated flame retardant
I C , COLLECTOR CURRENT (mA)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Figure 15., DC Current Gain
• Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (millimeters)
I C = 1.0 mA
0.6
10 mA
30 mA
0.2
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0
Maximum Recurrent Peak Reverse Voltage
0.005
0.01
Maximum RMS Voltage
0.02
VRRM
0.05
0.1
VRMS
12
20
13
30
0.2
14
40
0.5
14
15
50
1.0
21
16
60
2.0
28
I 20
CURRENT
40(mA) 50
B , BASE 30
Figure
16. Collector Saturation Region
IO
IFSM
V CE = 30 V
10
I C, COLLECTOR CURRENT (µA)
Operating Temperature Range
Storage Temperature
Range
T J = 125°C
10 –1
I C= I
75°C
REVERSE
10 –3
Maximum Average
Reverse
Current at @TFORWARD
A=25℃
NOTES:
10 –4
TSTG
VF
IR
@T A=125℃
25°C
1- Measured at
101 MHZ and applied reverse voltage of 4.0 VDC.
–5
–0.4 –0.3
–0.2
–0.1
0
0.1
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
120
200
V
70
105
140
V
80
100
150
200
V
50
A
A
40
120
℃
-55 to +150
- 65 to +175
V BE(sat) @ I C /I B = 10
0.6
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
-55 to +125
0.8
115
150
1.0
30
T J = 25°C
TJ
CES
CHARACTERISTICS
1.0
CJ
Typical Junction0 Capacitance (Note 1)
10 –2
RΘJA
Typical Thermal Resistance (Note 2)
V, VOLTAGE (VOLTS)
10
1
10
100
20
56
60
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
10
42
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
18
80
5.0
35
Maximum DC Blocking Voltage
100 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
0.4
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
0.031(0.8) Typ.
Method 2026
1.0
• Polarity : Indicated
by cathode band
T J = 25°C
Position
:
Any
• Mounting
0.8
• Weight : Approximated 0.011 gram
70
100
0.040(1.0)
0.024(0.6)
0.2
0.3
0.4
0.5
0.6
0.50
0.70
0.4
0.9
0.85
0.92
0.5
m
10
0.2
V
V CE(sat) @ I C /I B = 10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
100
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT5551DW1T1
THRU
MOUNTRECTIFIERS
TRANSISTOR
DUAL
NPN
SMALLMOUNT
SIGNAL
SURFACE
1.0A
SURFACE
SCHOTTKY
BARRIER
-20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
, TEMPERATURE COEFFICIENT (mV/°C)
better reverse leakage current and thermal resistance.
SOD-123H
profile surface mounted application in order to
• Low2.5
optimize
board space.
2
T J = –55°C to +135°C
• Low power loss, high efficiency.
1.5
• High current capability, low forward voltage drop.
• High1.0surge capability.
θ VC for V CE(sat)
0.5
for overvoltage protection.
• Guardring
• Ultra 0high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
–0.5
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
10.2 V
V BB
V in
100
V out
5.1 k
100
V in
t r , t f <10 ns
DUTY CYCLE = 1.0%
3.0 k
30 V
0.071(1.8)
RC
0.056(1.4)
RB
INPUT PULSE
Mechanical
data
–2.5
V CC
–8.8 V
0.25 mF
10 ms
–1.0
MIL-STD-19500
/228
θ VB for V BE(sat)
–1.5product for packing code suffix "G"
RoHS
Halogen
–2.0 free product for packing code suffix "H"
0.012(0.3) Typ.
1N914
0.040(1.0)
0.024(0.6)
θ
V
0.2 0.3 0.5
3.0 5.0
10
20 30 50
100
: UL94-V0
rated 1.0
flame2.0retardant
• Epoxy0.1
SOD-123H CURRENT (mA)
• Case : Molded plastic,
I C , COLLECTOR
,
Figure
5. Temperature
• Terminals :Plated
terminals,
solderableCoefficients
per MIL-STD-750
Values Shown are for I C @ 10 mA
0.031(0.8) Typ.
0.031(0.8) Typ.
Figure 6. Switching Time Test Circuit
Method 2026
• Polarity : Indicated by cathode band
100
Position : Any
• Mounting
70
50
• Weight : Approximated 0.011 gram
C, CAPACITANCE (pF)
500
t r @ V CC = 120 V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
200
t r @ V CC = 30 V
Ratings at 25℃ ambient temperature unless otherwise specified.
10
Single phase
half wave, 60Hz, resistive of inductive load.
7.0
C ibo
For capacitive
5.0 load, derate current by 20%
100
t d @ V EB(off) = 1.0 V
50
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH
C obo
30
V CC = 120 V
RATINGS
3.0
t, TIME (ns)
I C /I B = 10
T J = 25°C
T J = 25°C
30
20
Dimensions in inches and (millimeters)
1000
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
20
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
1.0 Voltage
Maximum RMS
VRMS
14
21
10
28
35
42
56
70
105
140
V
40
50
150
200
V
2.0
0.2
0.3
0.7 0.5 1.0
2.0
Maximum DC Blocking Voltage
3.0
5.0 7.0
VDC
10
20
20
30
0.2 0.3 0.5
VOLTAGE (VOLTS)
R , REVERSE
Maximum Average ForwardVRectified
Current
IO
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
5000
Typical Junction Capacitance (Note 1)
Operating Temperature Range
3000
2000
Storage Temperature Range
1000
t, TIME (ns)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
500
IFSM
NOTES:
5.0
60
RΘJA
CJ
I C /I B = 10
T J = 25°C
t f @ V CC = 120 V
-55 to +125
TJ
TSTG
10
80
20 30
50
100
100
200
t f @ V CC = 30 V
40
120
A
A
℃
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
2.0 3.0
1.0 CURRENT (mA)
I C , COLLECTOR
8. Turn–On
Time
30
Figure 7. Capacitances Figure
Peak Forward Surge Current 8.3 ms single half sine-wave
1.0
0.50
0.70
0.85
0.9
0.92
0.5
IR
300
t s @ V CC = 120 V
@T A=125℃
200
10
V
m
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT5551DW1T1
THRU
FM1200-M+
MOUNTRECTIFIERS
TRANSISTOR
DUAL
SMALLMOUNT
SIGNAL
SURFACE
1.0ANPN
SURFACE
SCHOTTKY
BARRIER
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-363
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
.087(2.20)
• Ultra high-speed switching.
.071(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
optimize board space.
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
Method 2026
.071(1.80)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.010(0.25)
Dimensions
in inches and (millimeters)
.003(0.08)
• Polarity : Indicated by cathode band
• Mounting Position : Any
.056(1.40)
• Weight : Approximated 0.011 gram
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
.016(0.40)
VRMS
.004(0.10)
VDC
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
14
21
28
35
42
56
70
105
140
Vo
20
30
40
50
60
80
100
150
200
Vo
IO
IFSM
1.0
30
Storage Temperature Range
40
120
-55 to +125
TJ
Operating Temperature Range
Am
℃
P
℃
- 65 to +175
℃
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL GENERIC
CHARACTERISTICS
MARKING
DIAGRAM*0.50
VF
Maximum Average Reverse Current at @T A=25℃
6
XX M
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1
0.9
0.92
10
XX
OR
0.85
0.5
6
IR
@T A=125℃
0.70
Vo
mA
M
Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
Am
-55 to +150
TSTG
13
30
(millimeters)
RΘJA in inches and
Dimensions
CJ
Typical Thermal Resistance (Note 2)
Rated DC Blocking Voltage
12
20
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate
current by 20%
1
XX = Specific Device Code
M = Date Code
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT5551DW1T1
THRU
MOUNT TRANSISTOR
DUAL1.0A
NPNSURFACE
SMALL SIGNAL
SURFACE BARRIER
MOUNT SCHOTTKY
RECTIFIERS -20V- 200V
Features
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low power Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability, low(1)
MMBT5551DW1T1 G
‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• High
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
TypicalWILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55
to
+125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storage
Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures
. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.