WILLAS FM120-M+ THRU MMBT2222(A)LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to packing code suffix "G", • RoHS product optimizefor board space. power loss, efficiency. • Low Halogen free product forhigh packing code suffix "H" . High current capability, • Moisture Sensitivity Level 1 low forward voltage drop. 0.146(3.7) 0.130(3.3) • High surge capability. • Guardring for overvoltage protection. MAXIMUM RATINGS high-speed switching. • Ultra epitaxial planar chip, metal silicon junction. • Silicon Rating Symbol 2222 • Lead-free parts meet environmental standards of Collector–Emitter Voltage/228 V CEO 30 MIL-STD-19500 • RoHS product for packing code suffix "G" 60 Collector–Base Voltage V CBO Halogen free product for packing code suffix "H" Emitter–Base Voltage V 5.0 EBO Mechanical data Collector Current — Continuous IC : UL94-V0 rated flame retardant • Epoxy 600 0.071(1.8) 0.056(1.4) 2222A Unit 40 Vdc 75 Vdc 6.0 Vdc 600 PD SOT– 23 3 0.040(1.0) COLLECTOR 0.024(0.6) mAdc : Molded plastic, SOD-123H • Case THERMAL CHARACTERISTICS , • Terminals :Plated terminals, solderable perSymbol MIL-STD-750 Characteristic Max Method 2026 Total Device Dissipation FR– 5 Board, (1) • Polarity : Indicated by cathode band T = 25°C 0.012(0.3) Typ. 1 0.031(0.8) Typ. Unit 225 0.031(0.8) Typ. BASE mW 2 Dimensions in inches and (millimeters) EMITTER A Position : Any • Mounting Derate above 25°C Thermal Resistance, Junction to0.011 Ambient RθJA • Weight : Approximated gram Total Device Dissipation PD MAXIMUM AND ELECTRICAL Alumina Substrate, (2) TA = RATINGS 25°C Derate 25°C temperature unless otherwise specified. Ratings at above 25℃ ambient Thermal Resistance, to Ambient Single phase half wave, Junction 60Hz, resistive of inductive load.RθJA and Storage Temperature ForJunction capacitive load, derate current by 20% DEVICE MARKINGRATINGS TJ , Tstg 1.8 556 300 2.4 417 mW/°C °C/W –55 to +150 °C 12 13 20 30 VRRM ELECTRICAL CHARACTERISTICS (TA = 25°C unless 14 noted.) 21 Maximum RMS Voltage VRMS otherwise MMBT2222LT1= M1B ; M MBT2222ALT1 = 1 P VDC IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Collector–Emitter Breakdown Voltage MMBT2222 Maximum Average Forward Rectified Current Device MMBT2222LT1 M1B 3000/Tape & Reel MMBT2222ALT1 1P 3000/Tape & Reel 20 30 Symbol 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 Min 50 Max 60 Unit80 100 150 200 Volts V (BR)CEO 30 — 1.0 30 Vdc Amps Amps MMBT2222A 40 –– 40 Typical Thermal Resistance (Note 2) RΘJA 60 — Vdc Collector–Base Breakdown Voltage MMBT2222 V (BR)CBO 120 Typical Junction Capacitance (Note 1) CJ (I C = 10 µAdc, I E = Range 0) MMBT2222A -55 to +125 75 -55 to +150 Operating Temperature TJ Emitter–Base Breakdown Voltage MMBT2222 V 5.0 — Vdc (BR)EBO - 65 to +175 Storage Temperature Range TSTG (I E = 10 µAdc, I C = 0) MMBT2222A 6.0 –– Collector CutoffCHARACTERISTICS Current MMBT2222A I CEX — FM150-MH 10FM160-MHnAdc FM140-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH ( V CE Forward = 60 Vdc, I EB(off)at = 1.0A 3.0Vdc) 0.9 Maximum Voltage DC 0.92 VF 0.50 0.70 0.85 Collector Cutoff Current I µAdc CBO 0.5 Maximum Average Reverse Current at @T A=25℃ IR (V MMBT2222 –– 0.01 CB = 50 Vdc, I E = 0) 10 @T A=125℃ Rated DC Blocking Voltage (V CB = 60 Vdc, I E = 0) MMBT2222A –– 0.01 NOTES: (V CB = 50 Vdc, I E = 0, T A = 125°C) MMBT2222 –– 10 1- Measured at 1Vdc, MHZI and applied reverse voltage of 4.0 VDC. (V CB = 60 MMBT2222A –– 10 E = 0, T A = 125°C) 2- Thermal From Junction to Ambient EmitterResistance Cutoff Current (V EB = 3.0 Vdc, I C = 0) MMBT2222A I EBO — 100 nAdc Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A I BL — 20 nAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (I C = 10 mAdc, I B = 0) Shipping 14 40 OFF CHARACTERISTICS superimposed on rated load (JEDEC method) Marking SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage Characteristic ORDERING INFORMATION CHARACTERISTICS Marking Code Maximum DC Blocking Voltage mW/°C °C/W mW 2012-06 2012-11 ℃/W PF ℃ ℃ UNIT Volts mAmp WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222(A)LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY General Purpose Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H CHARACTERISTICS (T Ain= order 25°C unless otherwise noted) (Continued) Low profile surface mounted application to •ELECTRICAL optimize board space. Characteristic LowCHARACTERISTICS power loss, high efficiency. •ON current capability, low forward voltage drop. • High DC Current Gain surge capability. • High (I C = 0.1 mAdc, V CE = 10 Vdc) • Guardring for overvoltage protection. (I C = 1.0 mAdc, V CE = 10 Vdc) • Ultra high-speed switching. (I C = 10 mAdc, V CE = 10 Vdc) epitaxial planar chip, metal silicon junction. • Silicon (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) parts meet environmental standards ofMMBT2222A only • Lead-free (I C = 150 mAdc, V CE = 10 Vdc) (3) MIL-STD-19500 /228 for packing suffix • RoHS (I Cproduct = 150 mAdc, V CE = code 1.0 Vdc) (3)"G" Halogen free mAdc, productVfor packing code suffix "H" (I C = 500 CE = 10 Vdc)(3) Mechanical data MMBT2222 MMBT2222A Collector–Emitter Saturation Voltage(3) : UL94-V0 rated flame retardant • Epoxy (I C = 150 mAdc, I B = 15 mAdc) MMBT2222 • Case : Molded plastic, SOD-123H MMBT2222A , • Terminals :Plated terminals, solderable per MIL-STD-750 MMBT2222 MMBT2222A (I C = 500mAdc, I B = 50 mAdc) Method 2026 • Polarity : Indicated by cathode band Base–Emitter Saturation Voltage Position • Mounting (I C = 150 mAdc, I: BAny = 15 mAdc) • Weight : Approximated 0.011 gram MMBT2222 MMBT2222A MMBT2222 (I C = 500 mAdc, I B = 50 mAdc) Symbol Max Unit 0.012(0.3) Typ. hFE –– –– –– 0.071(1.8) — 0.056(1.4) — 300 –– –– — 0.040(1.0) VCE(sat) Vdc 0.024(0.6) –– 0.4 0.031(0.8) Typ. 0.031(0.8) Typ. –– 0.3 –– 1.6 –– 1.0 in inches and (millimeters) VDimensions Vdc BE(sat) –– 1.3 0.6 1.2 –– 2.6 35 50 75 35 100 50 30 40 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MMBT2222A Ratings at 25℃ ambient temperature unless otherwise specified. SMALL–SIGNAL CHARACTERISTICS Single phase half wave, 60Hz, resistiveProduct(4) of inductive load. Current–Gain — Bandwidth MMBT2222 For capacitive derateVcurrent by 20% (I C load, = 20mAdc, MMBT2222A CE= 20Vdc, f = 100MHz) Min 0.146(3.7) 0.130(3.3) –– f 2.0 250 –– MHz 300 –– Output Capacitance(V 1.0 MHz) FM120-MH FM130-MH FM140-MH FM150-MH C obo 8.0 pF FM160-MH –– FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS CB = 10 Vdc, I E = 0, f =SYMBOL Input Capacitance MMBT2222 C –– 30 pF ibo Marking Code 12 13 14 15 16 18 10 115 120 (V EB = 0.5 Vdc, I C = 0,Voltage f = 1.0 MHz) MMBT2222A –– 80 25100 20 30 40 50 60 150 200 Maximum Recurrent Peak Reverse Volts VRRM Input Impedance(V h 2.0 8.0 kΩ CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A ie Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 0.25 1.25 Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC –4 Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A h re –8.0 X 10 Amps Maximum Average Forward Rectified Current IO 1.0 (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A — 4.0 Current Gain(V h fe 50 300 — CE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A Peak ForwardSmall–Signal Surge Current 8.3 ms single half sine-wave 30 IFSM Amps = 10load Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 75 375 superimposed(V on CE rated (JEDEC method) Output Admittance(V =1.0 kHz) MMBT2222A h oe µmhos 35 ℃/W 40 5.0 Typical Thermal Resistance (Note 2)CE=10 Vdc, I C = 1.0 mAdc,f RΘJA (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) MMBT2222A 25 200 CE C PF 120 Typical Junction Capacitance (Note 1) CJ Curren Base Time Comstant -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ (V CB= 20Range Vdc, I E = 20 mAdc, f = 31.8 MHz) MMBT2222A rb, C C - 65 to +175 –– 150 ps Storage Temperature TSTG ℃ Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) MMBT2222A NF –– 4.0 dB T CHARACTERISTICS SWITCHING CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Delay Time (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc Maximum Average Reverse Current at @T A=25℃ IR Rise Time I C =@T 150 mAdc, I B1 = 15 mAdc) A=125℃ Rated DC Blocking Voltage Maximum Forward Voltage at 1.0A DC NOTES: Storage Time (V CC = 30 Vdc, I C = 150 mAdc Timeand applied reverse I B1 =voltage I B2 = 15 mAdc) 1- Measured atFall 1 MHZ of 4.0 VDC. 0.50 0.70 td tr 0.5 — 10 — ts tf 0.85 10 0.9 0.92 Volts 25 ns — 225 ns — 60 mAmps 2- Thermal Resistance From Junction to Ambient 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222(A)LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SWITCHING TIME EQUIVALENT TEST CIRCUITS • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. V drop. low forward +30 voltage • High current capability, 1.0 to 100µs, 200 surge capability. • High DUTY CYCLE ~ + 16 V ~ 2% • Guardring for overvoltage protection. 1.0 k • Ultra 0 high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. C S* < 10 pF meet • Lead-free – 2.0V parts <2.0 ns environmental standards of • MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data +30 V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1.0 to 100µs, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 k 0.071(1.8) 0.056(1.4) 0 C S *< 10 pF –14 V < 20 ns 1N914 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. rated flame retardant • Epoxy : UL94-V0Figure 1. Turn–On Time • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) Figure 2. Turn–Off Time 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 h FE , DC CURRENT GAIN 1000 • Polarity : Indicated by cathode band 700 V CE= 10: Any V Position • Mounting 500 V CE=1.0 V • Weight : Approximated 0.011 gram 300 200 Dimensions in inches and (millimeters) T J = +125°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 100 Single phase 70 half wave, 60Hz, resistive of inductive load. For capacitive50load, derate current by 20% RATINGS 30 Marking Code +25°C –55°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage 0.1 V RMS 2.0 3.0 14 5.0 21 10 28 20 35 30 20 10 0.2 0.3 0.5 0.7 1.0 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM V CE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed 1.0 on rated load (JEDEC method) 0.8 Storage Temperature Range 500 115 150 120 200 Volts 105 700 1.0k 140 Volts 150 200 Volts 100 Amps Amps ℃/W T J = 25°C PF -55 to +150 ℃ - 65 to +175 ℃ 0.6 500mA 100mA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 10SYMBOL mA Volts 0.9 0.92 VF 0.50 0.70 0.85 CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.2 NOTES: 70 300 80 TSTG I Cat =1.0 mA Maximum Forward Voltage 1.0A DC 0.4 5620 40 120 -55 to +125 10 100 1.0 30 TJ Operating Temperature Range 60 Figure 3. DC Current Gain CJ Typical Junction Capacitance (Note 1) 50 18 80 42 70 100 20 30 40 50 I C , COLLECTOR CURRENT (mA) RΘJA Typical Thermal Resistance (Note 2) 7.0 16 60 0.5 IR @T A=125℃ mAmp 10 1- Measured at 10 MHZ and applied reverse voltage of 4.0 VDC. 0.005From0.01 0.02 0.03 2- Thermal Resistance Junction to Ambient 2012-06 2012-11 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222(A)LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 200 optimize board space. 100 I /I = 10 C B • Low power loss, high efficiency. TJ= 25°C 100 current capability, low forward voltage drop. • High 70 t r @V CC= 30V surge capability. • High 50 @V EB(off) = 2.0V t d • Guardring for overvoltage protection. t d@V EB(off) =0 30 high-speed switching. • Ultra 20 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of t , RISE TIME (ns) 10 MIL-STD-19500 /228 RoHS 7.0 product for packing code suffix "G" 5.0 Halogen free product for packing code suffix "H" Mechanical data 3.0 t ’s= t s–1/8 t f 30 20 10 0.040(1.0) 0.024(0.6) 5.0 5.0 7.0 10 20 • Polarity : Indicated by cathode band Position : Any • Mounting 10 • Weight : Approximated 0.011 gram I C = 1.0 mA, R S = 150 Ω I = 500 µA, R = 200 Ω 8 C S 4 RATINGS NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 500 f = 1.0 kHz RS = SOURCE RS = RESISTANCE 500 µA 1.0 mA 6 4 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 13 30 Maximum RMS Voltage VRMS 14 21 2 0 0.2 0.5 1.0 5.0 V 10DC 20 2.0 20 50 100 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 150 200 Volts 2 0 30 40 50 IO Figure 7. Frequency Effects Peak Forward Surge Current 8.3 ms single half sine-wave IFSM CJ Typical Junction Capacitance (Note 1) 20 Storage Temperature Range C eb CHARACTERISTICS TSTG VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 5.0 @T A=125℃ IR C cb 3.0 2.0 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 0.2 0.3 0.5 1.0 80 2.0k 5.0k 100 10k 20k 50k 100k Amps ℃/W PF -55 to +150 T J = 25°C 300 Amps 40 V CE = 20 V120 500 ℃ - 65 to +175 ℃ 200 0.50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.1 601.0k 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 7.0 Rated DC Blocking Voltage 50 200 -55 to +125 TJ Operating Temperature Range 10 RΘJA f T ,CURRENT– GAIN BANDWIDTH PRODUCT (MHz) superimposed on rated load (JEDEC method) 30 Resistance (Note 2) Typical Thermal 100 1.0 RESISTANCE (kΩ) R S, SOURCE Figure 8. Source Resistance Effects 30 Maximum Average Forward Rectified Current f , FREQUENCY (kHz) CAPACITANCE (pF) 300 0.031(0.8) Typ. µA C S MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSI C=50 100 µA I = 100 µA, R = 2.0 kΩ Maximum DC Blocking Voltage 0.01 0.02 0.05 0.1 200 10 R S = OPTIMUM VRRM NOTES: 100 Figure 6. Turn - Off Time Maximum Recurrent Peak Reverse Voltage 70 I C , COLLECTOR CURRENT (mA) Ratings at 25℃ ambient temperature I C = 50 µA, R Sunless = 4.0 kΩotherwise specified. 6 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 50 Dimensions in inches and (millimeters) Marking Code 30 0.031(0.8) Typ. Figure 5. Turn–On Time Method 2026 0.071(1.8) 0.056(1.4) tf 7.0 2.0 : UL94-V0 rated flame retardant • Epoxy 5.0 7.0 10 20 30 50 70 100 200 300 500 • Case : Molded plastic, SOD-123H , , COLLECTOR CURRENT (mA) C • Terminals :PlatedI terminals, solderable per MIL-STD-750 8 C B Typ. 0.012(0.3) 50 t , TIME (ns) • V CC= 30V I / I = 10 I B1 = I B2 TJ= 25°C 0.146(3.7) 0.130(3.3) 70 2.0 3.0 5.0 10 20 30 50 0.70 0.9 0.85 0.5 Volts mAmps 10 100 0.92 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current– Gain Bandwidth Product WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222(A)LT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 10 +0.5 optimize board space. T J = 25°C loss, high efficiency. • Low power current capability, low forward voltage drop. • High 0.8 capability. • High surge V BE(sat) @ I C /I B =10 overvoltage protection. • Guardring for 1.0 V 0.6 • Ultra high-speed switching. V CE =10 V V BE(on) @planar chip, metal silicon junction. • Silicon epitaxial 0.4 • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) V, VOLTAGE ( VOLTS ) COEFFICIENT (mV/ °C) 0 MIL-STD-19500 /228 • RoHS0.2product for packing code suffix "G" Halogen free product for packing code suffix "H" V CE(sat) @ Idata /I =10 Mechanical C B 0 0.012(0.3) Typ. R θVC for V CE(sat) – 0.5 0.071(1.8) 0.056(1.4) –1.0 –1.5 R θVB for V BE –2.0 0.040(1.0) 0.024(0.6) – 2.5 UL94-V0 flame5.0retardant • Epoxy :0.1 0.2 0.5rated 1.0 2.0 10 20 50 100 200 500 1.0k • Case : Molded plastic, SOD-123H , , COLLECTOR CURRENT (mA) C • Terminals :Plated Iterminals, solderable per MIL-STD-750 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.031(0.8) Typ. 100 200 500 0.031(0.8) Typ. I C , COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients Figure 11. “On” Voltages Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222(A)LT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H .006(0.15)MIN. • Low profile surface mounted application in order to optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .122(3.10) • Guardring for overvoltage protection. .106(2.70) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .110(2.80) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .083(2.10) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) Method 2026 .080(2.04) • Polarity : Indicated by cathode.070(1.78) band .003(0.08) Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage 12 20 .020(0.50) 14 .012(0.30) 20 VDC IO Peak Forward Surge Current 8.3 ms single half sine-waveDimensions IFSM .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts 1.0 30 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range in inches and (millimeters) 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2222(A)LT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers Package outline better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to •Ordering Information: optimize board space. Pb Free Product Device PN Packing 0.146(3.7) efficiency. • Low power loss, high 0.130(3.3) (1) capability, low forward • High current Part Number G ‐WS voltage drop. Tape&Reel: 3 Kpcs/Reel • High surge capability. Guardring for overvoltage protection. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any ***Disclaimer*** • Weight : WILLAS reserves the right to make changes without notice to any product Approximated 0.011 gram specification herein, to make corrections, modifications, enhancements or other MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts and do vary in different applications and actual performance may vary over time. 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 WILLAS products are not designed, intended or authorized for use in medical, Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 applications where a failure or malfunction of component or circuitry may directly Storage Temperature Range TSTG ℃ or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.