INFINEON BC849

BC846...BC850
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858
BC859, BC860 (PNP)
2
1
Type
Marking
Pin Configuration
BC846A
1As
1=B
2=E
3=C
SOT23
BC846B
1Bs
B=1
2=E
3=C
SOT23
BC847A
1Es
B=1
2=E
3=C
SOT23
BC847B
1Fs
1=B
2=E
3=C
SOT23
BC847C
1Gs
1=B
2=E
3=C
SOT23
BC848A
1Js
1=B
2=E
3=C
SOT23
BC848B
1Ks
1=B
2=E
3=C
SOT23
BC848C
1Ls
1=B
2=E
3=C
SOT23
BC849B
2Bs
1=B
2=E
3=C
SOT23
BC849C
2Cs
1=B
2=E
3=C
SOT23
BC850B
2Fs
1=B
2=E
3=C
SOT23
BC850C
2Gs
1=B
2=E
3=C
SOT23
1
VPS05161
Package
Nov-20-2002
BC846...BC850
Maximum Ratings
Parameter
Symbol
BC846
BC847
BC848
BC850
BC849
Unit
Collector-emitter voltage
VCEO
65
45
30
V
Collector-base voltage
VCBO
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEBO
6
6
5
DC collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
Peak emitter current
IEM
200
Total power dissipation, TS = 71 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point1)
240
RthJS
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
IC = 10 mA, IB = 0
BC846
65
-
-
BC847/850
45
-
-
BC848/849
30
-
-
BC846
80
-
-
BC847/850
50
-
-
BC848/849
30
-
-
V(BR)CBO
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V
V(BR)CEO
Collector-emitter breakdown voltage
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC846
80
-
-
BC847/850
50
-
-
BC848/849
30
-
-
BC846/847
6
-
-
BC848-850
5
-
-
ICBO
-
-
15
nA
ICBO
-
-
5
µA
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
V
V(BR)CES
V(BR)EBO
Collector cutoff current
VCB = 40 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE -group A
-
140
-
hFE -group B
-
250
-
hFE -group C
-
480
-
hFE -group A
110
180
220
hFE -group B
200
290
450
hFE -group C
420
520
800
hFE
DC current gain 1)
IC = 2 mA, VCE = 5 V
-
hFE
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
90
250
IC = 100 mA, IB = 5 mA
-
200
600
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
900
-
IC = 2 mA, VCE = 5 V
580
660
700
IC = 10 mA, VCE = 5 V
-
-
770
Base-emitter saturation voltage 1)
VBEsat
Base-emitter voltage 1)
VBE(ON)
1) Pulse test: t ≤=300µs, D = 2%
3
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
-
2.7
-
hFE -gr.B
-
4.5
-
hFE -gr.C
-
8.7
-
Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
-
1.5
-
hFE -gr.B
-
2
-
hFE -gr.C
-
3
-
hFE -gr.A
-
200
-
hFE -gr.B
-
330
-
hFE -gr.C
-
600
-
S
h22e
hFE -gr.A
-
18
-
hFE -gr.B
-
30
-
hFE -gr.C
-
60
-
F
-
1.2
4
dB
Vn
-
-
0.135
µV
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
BC849
f = 1 kHz, f = 200 Hz
BC850
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k,
-
h21e
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
10-4
h12e
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
k
h11e
BC850
f = 10 ... 50 Hz
4
Nov-20-2002
BC846...BC850
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)
Total power dissipation Ptot = f(TS)
360
mW
C CB0
( C EB0 )
300
12
pF
BC 846...850
EHP00361
10
P tot
270
240
8
C EB
210
180
6
150
120
4
C CB
90
60
2
30
0
0
15
30
45
60
75
90 105 120
0
10 -1
°C 150
TS
5
10 0
V
VCB0
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
EHP00362
10 3
Ptot max
Ptot DC
EHP00363
10 3
MHz
tp
tp
D=
T
10 1
(VEB0 )
fT
5
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 -1
0
5 10 0
5
10 1
mA
10 2
ΙC
tp
5
Nov-20-2002
BC846...BC850
Collector cutoff current ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00415
10 4
Ι CB0
nA
ΙC
mA
max
10 3
5
10
EHP00367
10 2
100 C
25 C
-50 C
10 1
5
typ
2
5
10
10
0
1
5
5
10 0
0
50
100
˚C
10 -1
150
0
0.1
0.2
0.4
0.3
TA
DC current gain hFE = f (IC )
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00365
10 3
h FE 5
100 C
EHP00364
10 2
Ι C mA
100 C
25 C
-50 C
25 C
10 2
-50 C
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
5
V 0.5
VCEsat
10 -1
5
10 0
5
10 1
mA
10 -1
10 2
ΙC
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
6
Nov-20-2002
BC846...BC850
h parameter he = f (IC) normalized
h parameter he = f (VCE) normalized
VCE = 5V
IC = 2mA
EHP00368
10 2
he
5
EHP00369
2.0
he
h 11e
5
1.5
VCE = 5 V
10 1
Ι C = 2 mA
h 21 e
h 12e
h 11 e
h 12 e
1.0
h 22 e
10 0 h
21e
0.5
5
h 22e
10 -1
0
10 -1
5
10 0
mA
10 1
0
10
20
V
ΙC
VCE
Noise figure F = f (VCE )
Noise figure F = f (f)
IC = 0.2mA, RS = 2k, f = 1kHz
IC = 0.2mA, VCE = 5V, R S = 2k
20
F
BC 846...850
EHP00370
20
BC 846...850
EHP00371
dB
dB
F
15
15
10
10
5
5
0
10 -1
30
5
10 0
10 1
V
0
10 -2
10 2
VCE
10 -1
10 0
10 1
kHz 10 2
f
7
Nov-20-2002
BC846...BC850
Noise figure F = f (IC )
Noise figure F = f (IC)
VCE = 5V, f = 120Hz
VCE = 5V, f = 1kHz
20
BC 846...850
EHP00372
20
BC 846...850
EHP00373
dB
dB
F
F
15
15
RS = 1 MΩ
100 k Ω
10 k Ω
RS = 1 MΩ
100 k Ω 10 k Ω
10
10
500 Ω
1 kΩ
5
5
500 Ω
1 kΩ
0
10 -3
10 -2
10 -1
10 0
0
10 -3
mA 10 1
10 -2
10 -1
10 0
mA 10 1
ΙC
ΙC
Noise figure F = f (IC )
VCE = 5V, f = 10kHz
20
BC 846...850
EHP00374
dB
F
15
R S = 1 MΩ
100 kΩ
10
10 k Ω
500 Ω
5
1 kΩ
0
10 -3
10 -2
10 -1
10 0
mA 10 1
ΙC
8
Nov-20-2002