PNP Silicon AF Transistors BC 856W ... BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code (tape and reel) BC 856 AW BC 856 BW BC 857 AW BC 857 BW BC 857 CW BC 858 AW BC 858 BW BC 858 CW BC 859 AW BC 859 BW BC 859 CW BC 860 BW BC 860 CW 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 Q62702-C2301 Q62702-C2302 Q62702-C2303 1)For Pin Configuration 1 2 3 B E C Package1) SOT-323 detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 856W ... BC 860W Maximum Ratings Description Symbol BC 856W BC 857W BC 858W Unit BC 860W BC 859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCES 80 50 30 V Emitter-base voltage VEBO 5 5 5 V Collector current IC 100 mA Collector peak current ICM 200 mA Total power dissipation, TS = 115 ˚C Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg –65 to 150 ˚C Thermal Resistance Junction - ambient1) Rth JA ≤ 240 K/W Junction - soldering point Rth JS ≤ 105 K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 65 45 30 – – – – – – Collector-base breakdown voltage V(BR)CB0 IC = 10 µA BC 856W BC 857W, BC 860W BC 858W, BC 859W 80 50 30 – – – – – – Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 856W BC 857W, BC 860W BC 858W, BC 859W V(BR)CES 80 50 30 – – – – – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 5 – – Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C ICB0 – – – – 15 5 DC current gain IC = 10 µA, VCE = 5 V BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW IC = 2 mA, VCE = 5 V BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(on) DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856W BC 857W, BC 860W BC 858W, BC 859W 1)Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 3 V V(BR)CE0 nA µA – – – – 140 250 480 – – – 125 220 420 180 290 520 250 475 800 – – 75 250 300 650 – – 700 850 – – 600 – 650 – 750 820 mV BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo – 10 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW … BC 859 AW BC 856 BW … BC 860 BW BC 857 CW … BC 860 CW h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz … 15 kHz BC 859W BC 860W BC 859W f = 1 kHz, ∆ f = 200 Hz BC 860W F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BC 860W Vn Semiconductor Group kΩ – – – – – – 10– 4 – – – 1.5 2.0 3.0 – – – – – – – 200 330 600 – – – µS – – – 18 30 60 – – – dB – – – – 1.2 1.0 1.0 1.0 4 3 4 4 µV – 4 2.7 4.5 8.7 – 0.110 BC 856W ... BC 860W Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856W ... BC 860W Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 856W ... BC 860W h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ Semiconductor Group 7 BC 856W ... BC 860W Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8