BC856U PNP Silicon AF Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking BC856U 3Ds Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 Collector-base voltage VCBO 80 Collector-emitter voltage VCES 80 Emitter-base voltage VEBO 5 DC collector current IC 100 Peak collector current ICM 200 Total power dissipation, TS = 118 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 130 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC856U Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - V(BR)CES 80 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - hFE IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 475 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) 1) Pulse test: t < 300s; D < 2% 2 Nov-29-2001 BC856U Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - h11e - 4.5 - k h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - S F - - 10 dB AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz 3 Nov-29-2001 BC856U Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-29-2001 BC856U Transition frequency fT = f (IC) Collector-base capacitance CCB = f (VCBO) VCE = 5V Emitter-base capacitance CEB = f (VEBO) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856...860 EHP00376 10 8 10 2 C EBO 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA ΙC 0 10 -1 10 2 10 0 5 V VCB0 10 1 (VEB0 ) Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 10 4 nA ΙC Ι CB0 EHP00380 10 2 mA 10 3 100 C 25 C -50 C 5 10 1 max 10 2 5 5 typ 10 1 5 10 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat TA 5 Nov-29-2001 BC856U DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 10 3 EHP00379 10 2 mA h FE 5 ΙC 100 C 100 C 25 C -50C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 10 -1 mA 10 2 ΙC 6 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat Nov-29-2001