BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1=E 2=B 6=C BC 847PN 1Ps SOT-363 4=E 5=B 3=C Q62702-C2374 PNP-Transistor Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 50 Collector-emitter voltage VCES 50 Emitter-base voltage VEBO 5 DC collector current IC 100 Peak collector current ICM 200 Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65...+150 Junction ambient 1) RthJA ≤275 Junction - soldering point RthJS ≤140 V mA Thermal Resistance K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 BC 847PN Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 45 - - Collector-base breakdown voltage V(BR)CBO 50 - - IC = 10 µA, IB = 0 Collector-emitter breakdown voltage V(BR)CES 50 - - V(BR)EBO 5 - - Collector cutoff current ICBO - - 15 nA VCB = 30 V, IE = 0 Collector cutoff current ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 , TA = 150 °C hFE DC current gain 1) - IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 630 VCEsat Collector-emitter saturation voltage1) mV IC = 10 mA, IB = 0.5 mA - 90 300 IC = 100 mA, IB = 5 mA - 200 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 750 IC = 10 mA, VCE = 5 V - - 820 VBEsat Base-emitter saturation voltage 1) VBE(ON) Base-emitter voltage 1) 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 May-12-1998 BC 847PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 2 - pF Ceb - 10 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µS AC Characteristics per Transistor Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Semiconductor Group 3 May-12-1998 BC 847PN Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy 300 mW TS Ptot 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 K/W - 10 2 Ptotmax / PtotDC R thJS 10 10 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 10 1 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 May-12-1998 BC 847PN Collector-base capacität CCB = f (VCBO ) Transition frequency fT = f (IC ) Emitter-base capacität CEB = f (VEBO ) VCE = 5V Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat ), hFE = 20 Semiconductor Group 5 May-12-1998 BC 847PN DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat ), hFE = 20 h parameter he = f (IC) normalized h parameter he = f (VCE ) normalized VCE = 5V IC = 2mA Semiconductor Group 6 May-12-1998