INFINEON IPD230N06NG

IPD230N06N G
OptiMOS® Power-Transistor
Product Summary
Features
• For dc/dc converters and sync. rectification
• N-channel enhancement - normal level
V DS
60
V
R DS(on),max
23
mΩ
ID
30
A
• 175 °C operating temperature
• Pb-free lead plating, RoHS compliant
• Avalanche rated
Type
IPD230N06N G
Package
PG-TO252-3
Marking
230N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
TC=25 °C 1)
30
T C=100 °C
30
Pulsed drain current
I D,pulse
T C=25 °C2)
120
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 Ω
150
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
A
mJ
kV/µs
±20
V
100
W
-55 ... 175
°C
55/175/56
1)
Current is limited by bondwire;with an R thJC=1.5 K/W the chip is able to carry 43 A.
2)
See figure 3
Rev. 1.2
Unit
page 1
2008-09-01
IPD230N06N G
Parameter
Values
Symbol Conditions
min.
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
-
1.5
minimal footprint
-
-
75
6 cm2 cooling area3)
-
-
50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=50 µA
2.1
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
1
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=30 A
-
18
23
mΩ
Gate resistance
RG
-
1.6
-
Ω
Transconductance
g fs
17
34
-
S
|V DS|>2|I D|R DS(on)max,
I D=30 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.2
page 2
2008-09-01
IPD230N06N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
860
1100
-
240
320
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
64
96
Turn-on delay time
t d(on)
-
10
15
Rise time
tr
-
25
37
Turn-off delay time
t d(off)
-
26
39
Fall time
tf
-
24
36
Gate to source charge
Q gs
-
5
6
Gate charge at threshold
Q g(th)
-
2.6
3
Gate to drain charge
Q gd
-
9.7
14.6
Switching charge
Q sw
-
12
17
Gate charge total
Qg
-
23
31
Gate plateau voltage
V plateau
-
5.5
-
Output charge
Q oss
-
9
11
-
-
30
-
-
120
-
0.91
1.3
V
-
39
48
ns
-
48
60
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=30 A, R G=12 Ω
pF
ns
Gate Charge Characteristics4)
V DD=30 V, I D=30 A,
V GS=0 to 10 V
V DD=30 V, V GS=10 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
V R=30 V, I F=I S,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2008-09-01
IPD230N06N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
30
100
25
80
I D [A]
P tot [W]
20
60
40
15
10
20
5
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
101
limited by on-state
resistance
1 µs
2
10
10 µs
100
101
Z thJC [K/W]
I D [A]
100 µs
1 ms
DC
10 ms
0.5
0.2
0.1
10-1
100
0.05
0.02
0.01
single pulse
10-1
10-2
-1
10
0
1
10
10
2
10
V DS [V]
Rev. 1.2
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2008-09-01
IPD230N06N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
60
80
10 V
7V
70
6.5 V
50
5V
60
5.5 V
R DS(on) [mΩ]
I D [A]
50
6V
40
30
40
6V
z
30
6.5 V
5.5 V
7V
20
20
10 V
5V
10
10
0
0
1
2
3
4
5
6
7
0
8
10
20
V DS [V]
30
40
50
60
40
50
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
40
50
45
40
30
35
g fs [S]
I D [A]
30
20
25
20
15
10
175 °C
10
25 °C
5
0
0
0
1
2
3
4
5
6
7
V GS [V]
Rev. 1.2
0
10
20
30
I D [A]
page 5
2008-09-01
IPD230N06N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
70
4
60
3.5
490µA
3
50
40
30
V GS(th) [V]
R DS(on) [mΩ]
49 µA
2.5
98 %
2
1.5
typ
20
1
10
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
102
175 °C 98%
Ciss
103
25 °C
I F [A]
C [pF]
175 °C
Coss
101
102
Crss
100
25 °C 98%
101
10-1
0
10
20
30
40
50
V DS [V]
Rev. 1.2
0
0.5
1
1.5
2
2.5
V SD [V]
page 6
2008-09-01
IPD230N06N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
102
12
V GS [V]
100 °C
I AV [A]
48 V
8
25 °C
101
30 V
12V
10
150 °C
6
4
2
0
0
100
100
1
10
t AV [µs]
2
5
10
10
15 Drain-source breakdown voltage
10
15
20
25
30
Q gate [nC]
3
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
75
V GS
Qg
V BR(DSS) [V]
70
65
60
V g s(th)
55
Q g (th)
50
Q sw
Q gs
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.2
page 7
2008-09-01
IPD230N06N G
PG-TO252-3: Outline
Rev. 1.2
page 8
2008-09-01
IPD230N06N G
Rev. 1.2
page 9
2008-09-01