IPD230N06N G OptiMOS® Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS(on),max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant • Avalanche rated Type IPD230N06N G Package PG-TO252-3 Marking 230N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value TC=25 °C 1) 30 T C=100 °C 30 Pulsed drain current I D,pulse T C=25 °C2) 120 Avalanche energy, single pulse E AS I D=30 A, R GS=25 Ω 150 Reverse diode dv /dt dv /dt I D=30 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 100 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire;with an R thJC=1.5 K/W the chip is able to carry 43 A. 2) See figure 3 Rev. 1.2 Unit page 1 2008-09-01 IPD230N06N G Parameter Values Symbol Conditions min. typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA - 1.5 minimal footprint - - 75 6 cm2 cooling area3) - - 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 2.1 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=30 A - 18 23 mΩ Gate resistance RG - 1.6 - Ω Transconductance g fs 17 34 - S |V DS|>2|I D|R DS(on)max, I D=30 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2008-09-01 IPD230N06N G Parameter Values Symbol Conditions Unit min. typ. max. - 860 1100 - 240 320 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 64 96 Turn-on delay time t d(on) - 10 15 Rise time tr - 25 37 Turn-off delay time t d(off) - 26 39 Fall time tf - 24 36 Gate to source charge Q gs - 5 6 Gate charge at threshold Q g(th) - 2.6 3 Gate to drain charge Q gd - 9.7 14.6 Switching charge Q sw - 12 17 Gate charge total Qg - 23 31 Gate plateau voltage V plateau - 5.5 - Output charge Q oss - 9 11 - - 30 - - 120 - 0.91 1.3 V - 39 48 ns - 48 60 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=30 A, R G=12 Ω pF ns Gate Charge Characteristics4) V DD=30 V, I D=30 A, V GS=0 to 10 V V DD=30 V, V GS=10 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2008-09-01 IPD230N06N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 30 100 25 80 I D [A] P tot [W] 20 60 40 15 10 20 5 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 limited by on-state resistance 1 µs 2 10 10 µs 100 101 Z thJC [K/W] I D [A] 100 µs 1 ms DC 10 ms 0.5 0.2 0.1 10-1 100 0.05 0.02 0.01 single pulse 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-09-01 IPD230N06N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 80 10 V 7V 70 6.5 V 50 5V 60 5.5 V R DS(on) [mΩ] I D [A] 50 6V 40 30 40 6V z 30 6.5 V 5.5 V 7V 20 20 10 V 5V 10 10 0 0 1 2 3 4 5 6 7 0 8 10 20 V DS [V] 30 40 50 60 40 50 60 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 50 45 40 30 35 g fs [S] I D [A] 30 20 25 20 15 10 175 °C 10 25 °C 5 0 0 0 1 2 3 4 5 6 7 V GS [V] Rev. 1.2 0 10 20 30 I D [A] page 5 2008-09-01 IPD230N06N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 70 4 60 3.5 490µA 3 50 40 30 V GS(th) [V] R DS(on) [mΩ] 49 µA 2.5 98 % 2 1.5 typ 20 1 10 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 102 175 °C 98% Ciss 103 25 °C I F [A] C [pF] 175 °C Coss 101 102 Crss 100 25 °C 98% 101 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.2 0 0.5 1 1.5 2 2.5 V SD [V] page 6 2008-09-01 IPD230N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 102 12 V GS [V] 100 °C I AV [A] 48 V 8 25 °C 101 30 V 12V 10 150 °C 6 4 2 0 0 100 100 1 10 t AV [µs] 2 5 10 10 15 Drain-source breakdown voltage 10 15 20 25 30 Q gate [nC] 3 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 60 V g s(th) 55 Q g (th) 50 Q sw Q gs -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.2 page 7 2008-09-01 IPD230N06N G PG-TO252-3: Outline Rev. 1.2 page 8 2008-09-01 IPD230N06N G Rev. 1.2 page 9 2008-09-01