Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time (-55 oC to +125 oC) q Three-state data bus q Packaging options: - 28-pin 100-mil center DIP (0.600 x 1.4) - 28-lead 50-mil center flatpack (0.490 x 0.74) q V DD : 3.0 to 3.6volts q Low operating and standby current - Operating: 50mA maximum @18.2 MHz • Derating: 1.5mA/MHz - Standby: 500µA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) LETTH (0.25) ~ 100 MeV-cm2/mg SEL Immune >128 MeV-cm 2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion - Memory cell LET threshold: >128 MeV-cm2/mg A(12:0) q QML Q & V compliant part - AC and DC testing at factory DECODER q Standard Microcircuit Drawing 5962-01516 PRODUCT DESCRIPTION The UT28F64LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64LV. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64LV ideal for high speed systems designed for operation in radiation environments. MEMORY ARRAY SENSE AMPLIFIER CE PE CONTROL LOGIC DQ(7:0) OE PROGRAMMING Figure 1. PROM Block Diagram 1 DEVICE OPERATION PIN NAMES The UT28F64LV has three control inputs: Chip Enable (CE), Program Enable (PE), and Output Enable (OE); thirteen address inputs, A(12:0); and eight bidirectional data lines, DQ(7:0). CE is the device enable input that controls chip selection, active, and standby modes. AssertingCE causes I DD to rise to its active value and decodes the thirteen address inputs to select one of 8,192 words in the memory. PE controls program and read operations. During a read cycle, OE must be asserted to enable the outputs. A(12:0) Address CE Chip Enable OE Output Enable PE Program Enable DQ(7:0) Data Input/Data Output PIN CONFIGURATION Table 1. Device Operation Truth Table 1 NC 1 28 V DD A12 2 27 PE A7 3 26 A6 A5 4 5 A4 6 A3 OE PE CE I/O MODE MODE NC X 1 1 Three-state Standby 25 A8 0 1 0 Data Out Read 24 23 A9 A11 1 0 0 Data In Program 7 22 OE 1 1 0 Three-state A2 8 21 A10 A1 9 20 CE A0 10 19 DQ7 DQ0 11 18 DQ6 DQ1 DQ2 12 17 13 16 DQ5 DQ4 V SS 14 15 DQ3 Read 2 Notes: 1. “X” is defined as a “don’t care” condition. 2. Device active; outputs disabled. ABSOLUTE MAXIMUM RATINGS 1 (Referenced to VSS ) SYMBOL PARAMETER LIMITS UNITS V DD DC supply voltage -0.3 to 7.0 V VI/O Voltage on any pin -0.5 to (VDD + 0.5) V T STG Storage temperature -65 to +150 °C 1.5 W +175 °C Thermal resistance, junction-to-case 2 3.3 °C/W DC input current ±10 mA PD Maximum power dissipation TJ Maximum junction temperature ΘJC II Notes: 1 . Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 . Test per MIL-STD-883, Method 1012, infinite heat sink. 2 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMITS UNITS V DD Positive supply voltage 3.0 to 3.6 V TC Case temperature range -55 to +125 °C V IN DC input voltage 0 to V DD V DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)* (VDD = 3.0V to 3.6V; -55°C < TC < +125°C) SYMBOL PARAMETER V IH High-level input voltage VIL Low-level input voltage V OL1 Low-level output voltage V OL2 CONDITION MINIMUM MAXIMUM .7VDD UNIT V .25VDD V IOL = 100µA, V DD = 3.0V V SS + 0.05 V Low-level output voltage IOL = 1.0mA, V DD = 3.0V VSS + 0.1 V V OH1 High-level output voltage IOH = -100µA, VDD = 3.0V V DD - 0.15 V V OH2 High-level output voltage IOH = -1.0mA VDD = 3.0V V DD - 0.3 V CIN 1 Input capacitance ƒ = 1MHz, V DD = 3.3V 15 pF Bidirectional I/O capacitance ƒ = 1MHz, V DD = 3.3V 15 pF CIO 1, 4 VOUT = 0V IIN Input leakage current VIN = 0V to VDD -3 3 µA I OZ Three-state output leakage current VO = 0V to V DD VDD = 3.6V OE = 3.6V -8 8 µA IOS 2,3 Short-circuit output current VDD = 3.6V, VO = V DD VDD = 3.6V, VO = 0V 90 mA mA I DD(OP) 5 Supply current operating @18.2MHz (55ns product) CMOS input levels (IOUT = 0), 50 mA Supply current standby CMOS input levels, VIL = V SS +0.25V CE = VDD -025, V IH = V DD -0.25V 500 µA I DD(SB) post-rad -90 VIL = 0.2V, V IH = 3.0V VDD , PE = 3.6V Notes: * Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si). 1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance. 2. Supplied as a design limit but not guaranteed or tested. 3. Not more than one output may be shorted at a time for maximum duration of one second. 4. Functional test. 5. Derates at 1.5mA/MHz. 3 READ CYCLE A combination of PE greater than V IH (min), and CE less than VIL(max) defines a read cycle. Read access time is measured from the latter of device enable, output enable, or valid address to valid data output. An address access read is initiated by a change in address inputs while the chip is enabled with OE asserted and PE deasserted. Valid data appears on data output, DQ(7:0), after the specified tAVQV is satisfied. Outputs remain active throughout the entire cycle. As long as device enable and output enable are active, the address inputs may change at a rate equal to the minimum read cycle time. The chip enable-controlled access is initiated by CE going active while OE remains asserted, PE remains deasserted, and the addresses remain stable for the entire cycle. After the specified tELQV is satisfied, the eight-bit word addressed by A(12:0) appears at the data outputs DQ(7:0). Output enable-controlled access is initiated by OE going active while CE is asserted, PE is deasserted, and the addresses are stable. Read access time is tGLQV unless t AVQV or t ELQV have not been satisfied. AC CHARACTERISTICS READ CYCLE (Post-Radiation)* (VDD = 3.0V to 3.6V; -55°C < TC < +125°C) SYMBOL PARAMETER 28F64-55 MIN MAX 55 UNIT tAVAV 1 Read cycle time ns tAVQV Read access time tAXQX 2 Output hold time 0 ns tGLQX2 OE-controlled output enable time 0 ns tGLQV OE-controlled access time 25 ns tGHQZ OE-controlled output three-state time 25 ns tELQX 2 CE-controlled output enable time tELQV CE-controlled access time 55 ns tEHQZ CE-controlled output three-state time 25 ns 55 0 Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si). 1. Functional test. 2. Three-state is defined as a 400mV change from steady-state output voltage. 4 ns ns tAVAV A(12:0) CE t AVQV tELQX tEHQZ t ELQV OE DQ(7:0) tGHQZ tAXQX tGLQV t GLQX tAVQV Figure 2. PROM Read Cycle RADIATION HARDNESS The UT28F64LV PROM incorporates special design and layout features which allow operation in high-level radiation environments. UTMC has developed special low-temperature processing techniques designed to enhance the total-dose radiation hardness of both the gate oxide and the field oxide while maintaining the circuit density and reliability. For transient radiation hardness and latchup immunity, UTMC builds all radiation-hardened products on epitaxial wafers using an advanced twin-tub CMOS process. In addition, UTMC pays special attention to power and ground distribution during the design phase, minimizing dose-rate upset caused by rail collapse. RADIATION HARDNESS DESIGN SPECIFICATIONS 1 Total Dose 5.0E5 rad(Si) Latchup LET Threshold >128 MeV-cm2/mg Memory Cell LET Threshold >128 MeV-cm2/mg 54 MeV-cm2/mg 1E-6 cm 2 Transient Upset LET Threshold Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg Note: 1 . The PROM will not latchup during radiation exposure under recommended operating conditions. 5 200 ohms VREF=1.04V VDD 90% 90% 50pF 0V 10% 10% < 5ns < 5ns Input Pulses Notes: 1. 50pF including scope probe and test socket. 2. Measurement of data output occurs at the low to high or high to low transition mid-point (CMOS input = VDD). Figure 3. AC Test Loads and Input Waveforms 6 D 1.400 ± 0.020 E 0.595 ± 0.015 E1 + 0.020 0.600 - 0.010 PIN NO. 1 ID. C +0.002 0.010 - 0.001 S1 0.005 MIN. TOP VIEW A 0.175 MAX. END VIEW S2 0.005 MIN. 0.200 L 0.125 e 0.100 b 0.018 ±.002 Q 0.060 0.015 SIDE VIEW b2 0.065 0.045 Notes: 1. Seal ring to be electrically isolated. 2. All exposed metalized areas to be plated per MIL-PRF-38535. 3. Ceramic to be opaque. 4. Dimension letters refer to MIL-STD-1835. 5. Total weight is approximately 5.0 grams. Figure 4. 28-Pin 100-mil Center DIP (0.600 x 1.4) 7 k 0.015 0.008 PIN NO. 1 ID. 6 k 0.015 0.008 26 PLACES 0.050 BSC e -A- -B- D 0.740 MAX S1 (4) PLACES 0.000 MIN. E1 0.550 MAX b 0.022 7 0.015 28 PLACES 0.010 M H 0.036 M H A-B S D S 5 A-B S D S 5 TOP VIEW E 0.520 0.460 A 0.115 0.045 -D7 c 0.009 0.004 0.040 -H- -CQ 0.045 0.026 E2 0.180 MIN L 0.370 0.250 E3 0.030 MIN END VIEW Notes: 1. All exposed metalized areas to be plated per MIL-PRF-38535. 2. The lid is connected to V SS . 3. Lead finishes are in accordance with MIL-PRF-38535. 4. Dimension letters refer to MIL-STD-1835. 5. Lead position and coplanarity are not measured. 6. ID mark symbol is vendor option. 7. With solder, increase maximum by 0.003. 8. Total weight is approximately 2.4 grams. Figure 5. 28-Lead 50-mil Center Flatpack (0.490 x 0.74) 8 ORDERING INFORMATION UT28F64LV PROM: SMD 5962 * 01516 * * * * Lead Finish: (A) = Solder (C) = Gold (X) = Optional Case Outline: (X) = 28-pin DIP (Y) = 28-lead Flatpack Class Designator: (Q) = Class Q (V) = Class V Device Type (01) = 55ns Access Time, CMOS compatible inputs and CMOS compatible outputs Drawing Number: 01516 Total Dose: (F) = 3E5 rads(Si) (G) = 5E5 rads(Si) (H) = 1E6 rads(Si) (R) = 1E5 rads(Si) Federal Stock Class Designator: No options Notes: 1. Lead finish (A, C, or X) must be specified. 2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold). 3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. 4. Lead finish: Factory programming either solder or gold. Field programming gold only. 9 UT28F64LV PROM UT **** *** - * * * * * * Total Dose: ( ) = None Lead (A) (C) (X) Finish: = Solder = Gold = Optional Screening: (C) = Mil Temp (P) = Prototype Package Type: (P) = 28-lead DIP (U) = 28-lead Flatpack Access Time: (55) = 55ns access time Device Type Modifier: (C) = CMOS compatible inputs and CMOS compatible outputs Device Type: (28F64LV) = 3.3V, 8Kx8 One Time Programmable PROM Notes: 1. Lead finish (A,C, or X) must be specified. 2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (g old). 3. Military Temperature Range flow per UTMC Manufacturing Flows Document. Radiation characteristics are neither tested nor guarante ed and may not be specified. 4. Prototype flow per UTMC Manufacturing Flows Document. Devices have prototype assembly and are tested at 25°C only. Radiation characteristics are neither tested nor guaranteed and may not be specified. 5. Lead finish: Factory programming either solder or gold. Field programming gold only. 10 Notes 11 Aeroflex Colorado Springs - Datasheet Definition Advanced Datasheet - Product In Development Preliminary Datasheet - Shipping Prototype Datasheet - Shipping QML & Reduced Hi-Rel COLORADO Toll Free: 800-645-8862 Fax: 719-594-8468 INTERNATIONAL Tel: 805-778-9229 Fax: 805-778-1980 NORTHEAST Tel: 603-888-3975 Fax: 603-888-4585 SE AND MID-ATLANTIC Tel: 321-951-4164 Fax: 321-951-4254 WEST COAST Tel: 949-362-2260 Fax: 949-362-2266 CENTRAL Tel: 719-594-8017 Fax: 719-594-8468 www.aeroflex.com/RadHard [email protected] Aeroflex Colorado Springs, Inc. (Aeroflex) reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. Our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused 1