AEROFLEX UT28F256T

Standard Products
UT28F256 Radiation-Hardened 32K x 8 PROM
Data Sheet
December 2002
FEATURES
q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory
- Supported by industry standard programmer
q 45ns and 40ns maximum address access time (-55 oC to
+125 oC)
q TTL compatible input and TTL/CMOS compatible output
levels
q Three-state data bus
Total dose: 1E6 rad(Si)
LETTH (0.25) ~ 100 MeV-cm2/mg
SEL Immune >128 MeV-cm 2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
A(14:0)
DECODER
q QML Q & V compliant part
- AC and DC testing at factory
q Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
q V DD : 5.0 volts + 10%
PRODUCT DESCRIPTION
q Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
-
Memory cell LET threshold: >128 MeV-cm 2/mg
q Standard Microcircuit Drawing 5962-96891
q Low operating and standby current
- Operating: 125mA maximum @25MHz
• Derating: 3mA/MHz
- Standby: 2mA maximum (post-rad)
-
-
The UT28F256 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F256.
The combination of radiation-hardness, fast access time, and low
power consumption make the UT28F256 ideal for high speed
systems designed for operation in radiation environments.
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
CONTROL
LOGIC
DQ(7:0)
OE
PROGRAMMING
Figure 1. PROM Block Diagram
1
DEVICE OPERATION
PIN NAMES
The UT28F256 has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. AssertingCE causes I DD to rise to its active value
and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
A(14:0)
Address
CE
Chip Enable
OE
Output Enable
PE
Program Enable
DQ(7:0)
Data Input/Data Output
PIN CONFIGURATION
Table 1. Device Operation Truth Table 1
A14
1
28
V DD
A12
2
27
PE
A7
3
26
A6
A5
4
5
A4
6
A3
OE
PE
CE
I/O MODE
MODE
A13
X
1
1
Three-state
Standby
25
A8
0
1
0
Data Out
Read
24
23
A9
A11
1
0
0
Data In
Program
7
22
OE
1
1
0
Three-state
A2
8
21
A10
A1
9
20
CE
A0
10
19
DQ7
DQ0
11
18
DQ6
DQ1
DQ2
12
17
13
16
DQ5
DQ4
V SS
14
15
DQ3
Read
2
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
ABSOLUTE MAXIMUM RATINGS 1
(Referenced to VSS )
SYMBOL
PARAMETER
LIMITS
UNITS
V DD
DC supply voltage
-0.3 to 7.0
V
VI/O
Voltage on any pin
-0.5 to (VDD + 0.5)
V
T STG
Storage temperature
-65 to +150
°C
1.5
W
+175
°C
Thermal resistance, junction-to-case 2
3.3
°C/W
DC input current
±10
mA
PD
Maximum power dissipation
TJ
Maximum junction temperature
ΘJC
II
Notes:
1 . Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2 . Test per MIL-STD-883, Method 1012, infinite heat sink.
2
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNITS
V DD
Positive supply voltage
4.5 to 5.5
V
TC
Case temperature range
-55 to +125
°C
V IN
DC input voltage
0 to V DD
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
PARAMETER
CONDITION
MINIMUM
MAXIMUM
V IH
High-level input voltage
(TTL)
VIL
Low-level input voltage
(TTL)
0.8
V
V OL1
Low-level output voltage
IOL = 4.0mA, V DD = 4.5V (TTL)
0.4
V
V OL2
Low-level output voltage
IOL = 200µA, V DD = 4.5V (CMOS)
V SS + 0.10
V
V OH1
High-level output voltage
IOH = -200µA, VDD = 4.5V (CMOS)
V OH2
High-level output voltage
IOH = -2.0mA, V DD = 4.5V (TTL)
CIN 1
Input capacitance
ƒ = 1MHz, V DD = 5.0V
VIN = 0V
15
pF
Bidirectional I/O capacitance
ƒ = 1MHz, V DD = 5.0V
15
pF
CIO 1, 4
2.4
UNIT
V
VDD -0.1
V
2.4
V
VOUT = 0V
IIN
Input leakage current
VIN = 0V to VDD
-5
5
µA
I OZ
Three-state output leakage
current
VO = 0V to V DD
VDD = 5.5V
OE = 5.5V
-10
10
µA
IOS 2,3
Short-circuit output current
VDD = 5.5V, VO = V DD
VDD = 5.5V, VO = 0V
90
mA
mA
I DD1 (OP)5
Supply current operating
@25.0MHz (40ns product)
@22.2MHz (45ns product)
TTL inputs levels (IOUT = 0), V IL =
0.2V
VDD , PE = 5.5V
125
117
mA
mA
I DD2 (SB)
post-rad
Supply current standby
CMOS input levels VIL = VSS +0.25V
CE = VDD - 0.25 VIH = VDD - 0.25V
2
mA
-90
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 3.0mA/MHz.
3
READ CYCLE
A combination of PE greater than V IH (min), and CE less than
VIL(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
tAVQV is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
tELQV is satisfied, the eight-bit word addressed by A(14:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is tGLQV unless t AVQV or t ELQV have
not been satisfied.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
PARAMETER
28F256-45
MIN
MAX
28F256-40
MIN
MAX
tAVAV 1
Read cycle time
45
40
tAVQV
Read access time
tAXQX 2
Output hold time
0
0
ns
tGLQX 2
OE-controlled output enable time
0
0
ns
tGLQV
OE-controlled access time
15
15
ns
tGHQZ
OE-controlled output three-state time
15
15
ns
tELQX2
CE-controlled output enable time
tELQV
CE-controlled access time
45
40
ns
tEHQZ
CE-controlled output three-state time
15
15
ns
45
0
Notes:
* Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019 at 1E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
4
UNIT
ns
40
0
ns
ns
tAVAV
A(14:0)
t AVQV
tELQX
CE
tEHQZ
t ELQV
OE
DQ(7:0)
tGHQZ
tAXQX
tGLQV
t GLQX
tAVQV
Figure 2. PROM Read Cycle
RADIATION HARDNESS
The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS 1
Total Dose
1E6
rad(Si)
Latchup LET Threshold
>128
MeV-cm2/mg
Memory Cell LET Threshold
>128
MeV-cm2/mg
54
MeV-cm2/mg
1E-6
cm 2
Transient Upset LET Threshold
Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg
Note:
1 . The PROM will not latchup during radiation exposure under recommended operating conditions.
5
330 ohms
V REF =1.73V
TTL
90%
90%
3.0V
50pF
10%
0V
10%
< 5ns
< 5ns
Input
Pulses
Notes:
1. 50pF including scope probe and test socket.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(TTL input = 1.5V).
Figure 3. AC Test Loads and Input Waveforms
6
k 0.015
0.008
PIN NO. 1 ID.
6
k 0.015
0.008
26 PLACES
0.050 BSC
e
-A-
-B-
D
0.740 MAX
S1
(4) PLACES
0.000 MIN.
E1
0.550 MAX
b 0.022
7 0.015 28 PLACES
0.010
M H
0.036
M H
A-B
S D
S
5
A-B
S D
S
5
TOP VIEW
E
0.520
0.460
A
0.115
0.045
-D7
c
0.009
0.004
0.040
-H-
-CQ 0.045
0.026
E2
0.180 MIN
L
0.370
0.250
E3
0.030 MIN
END VIEW
Notes:
1. All exposed metalized areas to be plated per MIL-PRF-38535.
2. The lid is connected to V SS .
3. Lead finishes are in accordance with MIL-PRF-38535.
4. Dimension letters refer to MIL-STD-1835.
5. Lead position and coplanarity are not measured.
6. ID mark symbol is vendor option.
7. With solder, increase maximum by 0.003.
8. Total weight is approximately 2.4 grams.
Figure 5. 28-Lead 50-mil Center Flatpack (0.490 x 0.74)
7
ORDERING INFORMATION
256K PROM: SMD
5962
* 96891 *
*
*
*
Lead Finish:
(A) = Solder
(C) = Gold
(X) = Optional
Case Outline:
(Y) = 28-pin DIP (contact factory)
(X) = 28-lead Flatpack
Class Designator:
(Q) = Class Q
(V) = Class V
Device Type
(03) = 45ns Access Time, TTL inputs, CMOS/TTL compatible outputs
(04) = 40ns Access Time, TTL inputs, CMOS/TTL compatible outputs
Drawing Number: 96891
Total Dose:
(F) = 3E5
(G) = 5E5
(H) = 1E6
(R) = 1E5
rads(Si)
rads(Si)
rads(Si)
rads(Si)
Federal Stock Class Designator: No options
Notes:
1. Lead finish (A, C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening.
4. Check factory for availability of 45ns part.
5. Lead finish: Factory programming either solder or gold. Field programming gold only.
8
256K PROM
UT ****
*** - * *
* * * *
Total Dose:
( ) = Total dose characteristics neither tested nor guaranteed
Lead
(A)
(C)
(X)
Finish:
= Solder
= Gold
= Optional
Screening:
(C) = Mil Temp
(P) = Prototype
Package Type:
(P) = 28-lead DIP (contact factory)
(U) = 28-lead Flatpack
Access Time:
(40) = 40ns access time, TTL compatible inputs, CMOS/TTL compatible outputs
(45) = 45ns access time, TTL compatible inputs, CMOS/TTL compatible outputs
Device Type Modifier:
(T) = TTL compatible inputs and CMOS/TTL compatible outputs
Device Type:
(28F256) = 32Kx8 One Time Programmable PROM
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (g old).
3. Military Temperature Range flow per UTMC Manufacturing Flows Document. Radiation characteristics are neither tested nor guaranteed and may
not be specified.
4. Prototype flow per UTMC Manufacturing Flows Document. Devices have prototype assembly and are tested at 25°C only. Radiation characteristics
are neither tested nor guaranteed and may not be specified.
5. Check factory for availability of 45ns part.
6. Lead finish: Factory programming either solder or gold. Field programming gold only.
9
Notes
10
Notes
11