V40170PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS® • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW TYPICAL APPLICATIONS PIN 1 PIN 2 PIN 3 CASE For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 170 V IFSM 200 A VF at IF = 20 A 0.67 V TJ max. 175 °C Package TO-3PW Diode variation Dual common cathode Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) V40170PW UNIT VRRM 170 V 40 per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 04-Dec-13 SYMBOL IF(AV) A 20 IFSM 200 A dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Document Number: 89942 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40170PW-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A TA = 25 °C IF = 20 A Instantaneous forward voltage per diode VF (1) IF = 5 A TA = 125 °C IF = 10 A Reverse current per diode - 0.75 - 0.83 0.95 0.52 - UNIT V 0.59 0.75 TA = 25 °C 1.3 - μA TA = 125 °C 1.5 - mA - 250 μA 2.5 50 mA IR (2) TA = 25 °C VR = 170 V MAX. 0.67 0.67 IF = 20 A VR = 136 V TYP. TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40170PW UNIT 1.2 per diode Typical thermal resistance °C/W RJC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-3PW V40170PW-M3/4W 4.5 4W 30/tube Tube 24 20.0 D = 0.5 D = 0.3 20 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 16 12 8 4 D = 0.8 D = 0.2 15.0 D = 1.0 D = 0.1 10.0 T 5.0 D = tp/T 0 tp 0.0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 04-Dec-13 0 5 10 15 20 25 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89942 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40170PW-M3 www.vishay.com Vishay General Semiconductor 10 000 TA = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 Instantaneous Forward Voltage (V) Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Fig. 5 - Typical Junction Capacitance Per Diode 100 TA = 175 °C TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 20 40 60 80 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 10 10 100 10 Junction to Case 1 0.1 0.01 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 100 t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-3PW 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 30° Ref. 0.245 (6.23) 0.225 (5.72) 0.170 (4.32) 0.840 (21.34) 0.820 (20.83) 0.160 (4.06) 0.140 (3.56) 0.225 (5.72) 0.205 (5.21) Revision: 04-Dec-13 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 0.551 (14.00) 0.537 (13.64) 0.050 (1.27) 3° Ref. R0.155 (R3.94) R0.145 (R3.68) 0.077 (1.96) 0.063 (1.60) 10° Typ. Both Sides 0.079 (2.01) 0.065 (1.65) Ø 0.146 (3.71) Ø 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.565 (14.35) 0.545 (13.84) 0.175 (4.45) 0.165 (4.19) 3° Ref. 3° Ref. 0.467 (11.86) 0.453 (11.51) 5° Ref. Both Sides 0.098 (2.50) 0.083 (2.12) 0.030 (0.75) 0.020 (0.50) Document Number: 89942 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000