V10170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 2 3 TYPICAL APPLICATIONS 1 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. V10170C PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 170 V IFSM 80 A VF at IF = 5.0 A 0.65 V TJ max. 175 °C Package TO-220AB Diode variation Dual common cathode Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL V10170C UNIT VRRM 170 V per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range 10 IF(AV) A 5 IFSM 80 A dV/dt 10 000 V/μs TJ, TSTG -40 to +175 °C Revision: 04-Dec-13 Document Number: 89940 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10170C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A TA = 25 °C IF = 5.0 A Instantaneous forward voltage per diode IF = 2.5 A IF = 5.0 A VR = 136 V Reverse current per diode VR = 170 V SYMBOL VF (1) TA = 125 °C TYP. MAX. 0.74 - 0.84 1.03 0.57 - UNIT V 0.65 0.74 TA = 25 °C 0.3 - μA TA = 125 °C 0.9 - mA IR (2) TA = 25 °C TA = 125 °C - 90 μA 1.3 10 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10170C UNIT 3.0 per diode Typical thermal resistance °C/W RJC per device 1.7 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.87 4W 50/tube Tube V10170C-M3/4W 4.4 6 5 D = 0.5 D = 0.8 4.0 RthJ-A=RthJ-C Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4 3 2 1 D = 0.3 D = 0.2 3.6 3.2 D = 0.1 D = 1.0 2.8 2.4 2.0 1.6 T 1.2 0.8 0.4 0 D = tp/T tp 0.0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 1 2 3 4 5 6 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 Document Number: 89940 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V10170C-M3 www.vishay.com Vishay General Semiconductor 10 000 TA = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 TA = 25 °C 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Instantaneous Forward Voltage (V) TA = 175 °C 10 TA = 150 °C 1 TA = 125 °C 0.1 TA = 100 °C 0.01 0.001 TA = 25 °C 0.0001 20 40 60 80 100 10 Junction to Case 1 0.1 0.01 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 100 t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 04-Dec-13 Document Number: 89940 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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