MSD23N20 N-Channel 20V (D-S) MOSFET Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.5V Gate Drive Applications Packing & Order Information SOT-323, 3,000/Reel Graphic symbol Publication Order Number: [MS23N20 ©Bruckewell Technology Corporation Rev. A -2014 MSD23N20 N-Channel 20V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V Continuous Drain Current @ TC=25°C 800 mA Continuous Drain Current @ TC=70°C 510 mA Pulsed Drain Current 3.2 A Power Dissipation (TC=25°C) 275 mW Power Dissipation (TC=100°C) 2.2 mW -55 to +150 °C ID IDM PD TJ/TSTG Operating Junction and Storage Temperature Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter t <= 5 sec Maximum Junction-to-Ambient(RthJA) Maximum Units 450 °C/W On Characteristics Symbol Test Conditions Min Typ. Max. Units VGS 0.3 0.6 1.0 V RDS(ON) VDS = VGS, ID = 250μA VGS = 4.5 V, ID = 0.5 A -- 200 300 VGS = 2.5 V, ID = 0.4 A -- 235 400 VGS=1.8V ,ID=0.2A -- 295 550 VGS=1.5V , ID=0.1A -- 365 800 VGS=1.2V , ID=0.1A -- 600 1500 Min Typ. Max. Off Characteristics Symbol Test Conditions BVDSS △VDSS/△Tj IDSS IGSS VGS=0, ID = 250μA VDSS Temperature Coefficient VDS = 16 V , VGS = 0 V VDS = 20 V , VGS = 0 V , TJ = 55°C VGS = 6 V, VDS = 0 V Publication Order Number: [MS23N20 20 mΩ Units V -- -0.01 -- -- -- -- -10 1 20 V/℃ uA uA ©Bruckewell Technology Corporation Rev. A -2014 MSD23N20 N-Channel 20V (D-S) MOSFET Dynamic Characteristics Symbol Test Conditions Min Typ. Max. Units -- 1.0 2.0 nC -- 0.26 0.5 nC -- 0.2 0.4 nC Min Typ. Max. Units -- 38.2 75 pF -- 14 28 pF CRSS -- 6 12 pF td(on) -- 5 10 ns Qg Qgs VDS = 10 V , ID = 0.5A, VGS = 4.5 V Qgd Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 10 V, VGS = 0 V, F = 1.0MHz tr VDD= 10 V, ID =0.5 A, -- 3.5 7 ns td(off) RG = 10 Ω , VGEN = 4.5 V -- 14 28 ns -- 6 12 ns tf Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Publication Order Number: [MS23N20 ©Bruckewell Technology Corporation Rev. A -2014 MSD23N20 N-Channel 20V (D-S) MOSFET Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS Tc FIG.2-NORMALIZED RDSON VS TJ FIG.3-NORMALIZED VTH VS TJ FIG.4-GATE CHARGE WAVEFORM Publication Order Number: [MS23N20 ©Bruckewell Technology Corporation Rev. A -2014 MSD23N20 N-Channel 20V (D-S) MOSFET FIG.5-TRANSFER CHARACTERISTICS Publication Order Number: [MS23N20 FIG.6-MAX SAFE OPEARTIONAREA ©Bruckewell Technology Corporation Rev. A -2014 MSD23N20 N-Channel 20V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MS23N20 ©Bruckewell Technology Corporation Rev. A -2014