MSN23P09S

MSN23P09S
20V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V
• Improved dv/dt capability
• Green Device Available
• 100% EAS Guaranteed
• Fast Switching
• RoHS compliant package
Application
• Notebook
• Load Switch
• Battery Protection
• Hand-held Instruments
SOT23-3S Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
-20
V
VGS
Gate to Source Voltage
±10
V
Continuous Drain Current (TC=25°C)
-5.8
Continuous Drain Current (TC=100°C)
-3.7
ID
IDM
1
Drain Current Pulsed
Publication Order Number: [MS69P05]
-23.2
A
A
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
PD
Value
Unit
Power Dissipation (TC = 25°C)
1.56
W
Power Dissipation – Derate above 25°C
0.012
W/°C
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance,Junction-to-Ambient
Min.
--
Value
Typ.
Units
Max.
--
80
°C/W
Electrical Characteristics (TJ=25°C, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
VGS =0 V , ID = 250μA
-60
--
--
V
--
-0.05
--
V/°C
--
--
--
--
△BVDSS
/△TJ
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage,Forward
ID = -1mA, Referenced
to 25°C
VDS = -20 V , TJ= 25°C
VDS = -16 V , TJ= 125°C
VGS = ±10 V , VDS = 0 V
-1
-10
±100
uA
nA
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS(th)
VDS = VGS, ID = 250 uA
-0.3
-0.6
-1
V
VGS = -4.5 V , ID = -4 A
28
33
VGS = -2.5 V , ID = -3 A
37
45
VGS = -1.8 V , ID = -2 A
49
65
2
mV/°C
8.4
S
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-state Resis-tance
△VGS(th)
Gate Threshold Voltage
VGS = VGS, ID = 250 uA
gfs
Forward Transconductance
VDS = -10V , IS = -3 A
Dynamic Characteristics
Symbol
Parameter
Test Conditions
mΩ
Min
Typ.
Max.
Units
VDS = -10 V,
--
16.1
25
nC
VGS = -4.5 V,
--
1.8
3
nC
ID = -4 A
--
3.8
7
nC
2,3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
CISS
Input Capacitance
VGS = 0 V,
--
1440
2100
pF
COSS
Output Capacitance
VDS = -15 V,
--
155
230
pF
CRSS
Reverse Transfer Capacitance
f = 1MHz
--
115
170
pF
2,3
2,3
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source Current
VD=VG=0V
--
--
-5.8
A
ISM
Pulsed Source Current
Force Current
--
--
-23.2
A
VSD
Diode Forward Voltage
IS = -1 A , VGS = 0 V , TJ=25°C
--
--
-1
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MS69P05]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MSN23P09S
20V P-Channel MOSFETs
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
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purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016