MS23P19Z 20V P-Channel MOSFETs Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • -20V,-250mA, RDS(ON) =650mΩ@VGS = -4.5V • Improved dv/dt capability • Fast switching • Green Device Available • Suit for -1.5V Gate Drive Applications • RoHS compliant package Application • Notebook • Load Switch • Battery Protection • Hand-held Instruments Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol Publication Order Number: [MS23P19Z] © Bruckewell Technology Corporation Rev. A -2014 MS23P19Z 20V P-Channel MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V Drain Current -Continuous (TC=25°C) -250 mA Drain Current -Continuous (TC=100°C) -160 mA Drain Current Pulsed -1.0 A Power Dissipation (TC=25°C) 155 mW Power Dissipation –Derate above 25°C 1.25 mW/°C ID IDM PD 1 TJ Storage Temperature Range -55 to 150 °C TSTG Operating Junction Temperature Range -55 to 150 °C Thermal Resistance Characteristics Symbol Parameter RθJA Typ. Max. Units 800 °C/W Thermal Resistance Junction to ambient Electrical Characteristics (TJ=25°C, unless otherwise noted) On Characteristics Symbol Parameter VGS RDS(ON) Gate Threshold Voltage VGS(th) Temperature Coefficient Static Drain-Source On-Resistance Test Conditions VDS = VGS , ID = 250μA Min Typ. Max. Units -0.3 -0.7 -1.0 V mV/°C 3 VGS = -4.5 V , ID = -0.2 A 500 650 VGS = -2.5 V , ID = -0.15 A 700 900 VGS = -1.8 V , ID = -0.1 A 1100 1400 VGS = -1.5 V , ID = -0.1 A 1700 2300 mΩ Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID=250μA -20 -- -- V BVDSS Temperature Coefficient ID = -1mA , Referenced to 25°C -- -0.01 -- V/°C -- -- -- -- △BVDSS /△TJ IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Publication Order Number: [MS23P19Z] VDS = -20 V , VGS = 0 V, TJ = 125°C VDS = -16 V , VGS = 0 V , TJ = 125°C VGS = ±8 V , VDS = 0 V -1 -10 ±20 uA uA © Bruckewell Technology Corporation Rev. A -2014 MS23P19Z 20V P-Channel MOSFETs Dynamic Characteristics Symbol Parameter Qg Test Conditions Total Gate Charge Min Typ. Max. Units -- 1 2 nC -- 0.28 0.5 nC -- 0.18 0.4 nC -- 8 16 ns VDD = -10 V, ID = -0.2 A, -- 5.2 10 ns RG = 10 Ω , VGS = -4.5 V -- 30 60 ns -- 18 36 ns -- 40 78 pF -- 15 30 pF -- 6.5 13 pF Min Typ. Max. Units -- -- -0.25 -- -- -0.5 -- -- -1 2,3 Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Time 2,3 Tr Turn-On Time 2,3 Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time CISS Input Capacitance VDS = -10 V,ID = -0.2 A, 2,3 VGS = -4.5 V 2,3 2,3 2,3 VDS = -10 V, VGS = 0 V, COSS Output Capacitance CRSS Reverse Transfer Capacitance F = 1.0MHz Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage A VG=VD=0V , Force Current IS = -0.2 A , VGS = 0 V, TJ = 125°C V Notes; 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Publication Order Number: [MS23P19Z] © Bruckewell Technology Corporation Rev. A -2014 MS23P19Z 20V P-Channel MOSFETs ■Characteristics Curve FIG.1-CONTIUMOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT RESPONSE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MS23P19Z] © Bruckewell Technology Corporation Rev. A -2014 MS23P19Z 20V P-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MS23P19Z] FIG.8-GATE CHARGE WAVEFORM © Bruckewell Technology Corporation Rev. A -2014 MS23P19Z 20V P-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS23P19Z] © Bruckewell Technology Corporation Rev. A -2014