MS67C10

MS67C10
N & P Channel 60-V Dual MOSFETs
Description
SO-8 Package information
These N+P dual Channel enhancement mode power
field effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficiency
fast switching applications.
Features
• Fast switching
• Green Device Available
• Suit for 4.5V Gate Drive Applications
Applications
• DC Fan
• Motor Drive Applications
• Networking
• Half / Full Bridge Topology
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Rating
Unit
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
Drain Current - Continuous (TC =25°C)
4.5
-3.5
A
Drain Current - Continuous (TC =70°C)
2.85
-2.21
A
18
-14
A
ID
IDM
PD
Drain Current - Pulsed
1
Power Dissipation (TC =25°C)
3.57
W
Power Dissipation - Derate above 25°C
0.028
W/°C
TJ
Storage Temperature Range
-55 to 150
°C
TSTG
Operating Junction Temperature Range
-55 to 150
°C
Thermal Resistance Ratings
Symbol
Parameter
Typ.
Max.
RθJA
Thermal Resistance Junction to ambient
--
75
RθJC
Thermal Resistance Junction to Case
--
35
Units
°C/W
N-CH Electrical Characteristics (TJ=25 °C, unless otherwise)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
BVDSS Temperature Coefficient
Reference to 25°C , ID = 1mA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
IDSS
Drain-Source Leakage Current
BVDSS
△BVDSS
/△TJ
On Characteristics
Symbol
Parameter
RDS(on)
VGS(th)
Typ.
Max.
60
V
0.05
V/°C
±100
VDS = 60 V , VGS = 0 V , TJ=25°C
1
VDS = 48 V , VGS = 0 V , TJ=125°C
10
Test Conditions
Min
Typ.
Max.
Static Drain-Source
VGS = 10 V, ID = 6 A
45
54
On-Resistance
VGS = 4.5 V, ID = 3 A
52
63
1.8
2.5
1.2
Gate Threshold Voltage
△VGS(th)
Temperature Coefficient
gfs
Forward Transconductance
Publication Order Number: [MS67C10]
VGS = VDS , ID = 250uA
VDS = 10 V, ID = 4 A
Units
nA
uA
Units
mΩ
V
-4.2
mV/°C
4.2
S
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
Dynamic and switching Characteristics
Symbol
Parameter
Qg
Test Conditions
Min
Typ.
Max.
Units
--
14
21
nC
--
2.9
5
nC
--
2.3
4
nC
--
3.9
7
ns
ID = 1 A , RG = 3.3 Ω,
--
12.6
24
ns
VGS = 10 V , VDD = 30 V
--
23.1
44
ns
--
6.7
13
ns
--
800
1160
pF
--
380
550
pF
--
115
170
pF
--
1.7
3.4
Ω
Min
Typ.
Max.
Units
--
--
4.5
A
--
--
9
A
--
--
1
V
2,3
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
2,3
2,3
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
VGS = 10 V
2,3
2,3
tr
VDS = 30 V , ID = 4 A,
2,3
2,3
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Total Gate Charge
VDS = 15 V
f = 1 MHz , VGS = 0 V
VDS = 0 V , f = 1 MHz , VGS = 0 V
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
VG = VD = 0 V , Force Current
VGS = 0 V , IS = 1 A , TJ = 25°C
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
■Typical
Electrical Characteristics - N-channel
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
P-CH Electrical Characteristics (TJ=25 °C, unless otherwise)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Drain-Source Breakdown Voltage
VGS = VGS, ID = 250uA
-60
BVDSS Temperature Coefficient
Reference to 25°C , ID = 1mA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
IDSS
Drain-Source Leakage Current
BVDSS
△BVDSS
/△TJ
On Characteristics
Symbol Parameter
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
△VGS(th)
Temperature Coefficient
gfs
Forward Transconductance
Dynamic and switching Characteristics
Symbol
Parameter
Qg
-1
VDS = -48 V , VGS = 0 V , TJ=125°C
10
Typ.
Max.
VGS = -10 V, ID = -6 A
87
105
VGS = -4.5 V, ID = -3 A
120
145
-1.6
-2.5
-1.0
VGS = VDS , ID = 250uA
VDS = -10 V, ID = -6 A
Test Conditions
2,3
Qgd
Gate-Drain Charge
2,3
td(on)
Turn-On Delay Time
tr
Rise Time
2,3
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
Output Capacitance
CRSS
Reverse Transfer Capacitance
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
mΩ
V
3
mV/°C
5.5
S
Units
--
10
15
nC
--
1.6
3.2
nC
--
3
6
nC
--
8
16
ns
ID = 1 A , RG = 6 Ω,
--
15.4
30
ns
VGS = -30 V , VDD = -30 V
--
42.5
80
ns
--
8.4
16
ns
--
785
1300
pF
--
175
300
pF
--
112
220
pF
Min
Typ.
Max.
Units
--
--
-3.5
A
--
--
-7
A
--
--
-1
V
VDS = -30 V , ID = -4 A,
VGS = -10 V
VDS = -30 V
f = 1 MHz , VGS = 0 V
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Units
Max.
2,3
COSS
uA
Typ.
2,3
2,3
nA
Min
Total Gate Charge
Gate-Source Charge
V/°C
±100
Min
Units
V
VDS = -60 V , VGS = 0 V , TJ=25°C
2,3
Qgs
Max.
-0.05
Test Conditions
RDS(on)
Typ.
VG = VD = 0 V , Force Current
VGS = 0 V , IS = -1 A , TJ = 25°C
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
■Typical
Electrical Characteristics - P-channel
FIG.7-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.8-NORMALIZED RDSON VS. TJ
FIG.9-NORMALIZED VTH VS. TJ
FIG.10-GATE CHARGE WAVEFORM
FIG.11-NORMALIZED TRANSIENT IMPEDANCE
FIG.12-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
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generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014