New Product VS-5ECH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum temperature operating junction • For PFC CRM/CCM, snubber operation Cathode • Low forward voltage drop Anode • Low leakage current SMC (DO-214AB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION/APPLICATIONS Package SMC IF(AV) 5A VR 600 V VF at IF 1.95 V State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. trr typ. 30 ns TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VRRM Average rectified forward current IF(AV) TL = 73 °C (1) IFSM TJ = 25 °C Non-repetitive peak surge current Operating junction and storage temperatures VALUES 600 Peak repetitive reverse voltage V 5 TJ, TStg UNITS 90 A - 55 to 175 °C Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT Revision: 11-Apr-13 TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 5 A - 1.65 1.95 1.4 IR = 100 μA IF = 5 A, TJ = 150 °C - 1.2 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 7.8 - UNITS V μA pF Document Number: 94779 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-5ECH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. IRRM Reverse recovery charge Qrr MAX. UNITS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 30 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 35 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 35 TJ = 25 °C - 23 - - 38 - - 3.5 - - 5.4 - TJ = 25 °C - 41 - TJ = 125 °C - 111 - MIN. TYP. MAX. UNITS °C TJ = 125 °C Peak recovery current TYP. TJ = 25 °C TJ = 125 °C IF = 5 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg - 55 - 175 Thermal resistance, junction to case RthJC (1) - - 14 Thermal resistance, junction to ambient RthJA (1) - - 80 °C/W 0.24 Approximate Weight g 0.008 Marking device Case style SMC (DO-214AB) oz. 5H6 1000 100 175 °C 100 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Mounted on PCB with minimum pad size TJ = 175 °C TJ = 150 °C 1 TJ = 25 °C 0.1 150 °C 10 1 0.1 25 °C 0.01 0.001 0.0001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Apr-13 Document Number: 94779 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-5ECH06-M3 www.vishay.com Vishay Semiconductors 10 9 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 RMS Limit 8 7 6 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 5 4 3 2 1 0 1 0 100 200 300 400 500 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) VR - Reverse Voltage (V) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 200 50 180 45 160 IF = 5 A, 125 °C 40 140 35 120 trr (ns) Allowable Case Temperature (°C) 1 0 600 DC 100 80 30 IF = 5 A, 25 °C 25 60 20 40 typical value 15 20 0 10 0 1 2 3 4 5 6 7 8 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 250 IF = 5 A, 125 °C Qrr (nC) 200 150 100 IF = 5 A, 25 °C 50 typical value 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 11-Apr-13 Document Number: 94779 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-5ECH06-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 5 E C H 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (5 = 5 A) 3 - Circuit configuration: E = Single diode 4 - C = SMC package 5 - Process type, H = Hyperfast recovery 6 - Voltage code (06 = 600 V) 7 - M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-5ECH06-M3/9AT QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 Revision: 11-Apr-13 Document Number: 94779 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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