MSQ2N60 N-Channel Enhancement Mode Power MOSFET Description The MSQ2N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM) Features • 2A, 600V, RDS(on) = 3.90Ω @VGS = 10 V • Low gate charge ( typical 9 nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant package Application • Ballast • Inverter • Switching applications Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 2 A Drain Current -Continuous (TC=100°C) 1.35 A 8 A ID IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy 130 mJ EAR Repetitive Avalanche Energy 5.55 mJ Publication Order Number: [MSQ2N60] © Bruckewell Technology Corporation Rev. A -2014 MSQ2N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter dv/dt PD TJ,TSTG Value Unit Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation (TC = 25 °C) 45 W - Derate above 25°C 0.4 W/°C -55 to +150 °C Operating and Storage Temperature Range NOTE: 1. Repetitive rating; pulse width limited by maximum junction temperature. Thermal Resistance Characteristics Symbol Parameter Value Units 2 Rthic Typical thermal resistance °C/W 32 RθJA On Characteristics Symbol Test Conditions Min Typ. Max. Units VGS VDS = VGS , ID = 250μA 2.0 3.0 4.0 V *RDS(ON) VGS = 10 V , ID = 10 A -- 0.26 0.32 Ω Min Typ. Max. Units 600 -- -- V -- 0.7 -- -- -- Static Characteristics Symbol Test Conditions BVDSS VGS = 0 V , ID=250μA △BVDSS /△TJ ID = 250μA, Referenced to 25°C IDSS VDS = 600 V , VGS = 0 V VDS = 480 V , VGS = 0 V , Tj = 125°C 1 10 μA IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA VGS VDS = VGS , ID = 250μA 2.0 -- 4.0 V *RDS(ON) VGS = 10 V , ID = 1 A -- 3.9 4.8 Ω Min Typ. Max. Units -- 200 -- pF -- 20 -- pF -- 4 -- pF Dynamic Characteristics Symbol Test Conditions CISS COSS VDS = 25 V, VGS = 0 V, F = 1.0MHz CRSS Publication Order Number: [MSQ2N60] © Bruckewell Technology Corporation Rev. A -2014 MSQ2N60 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Test Conditions td(on) Min Typ. Max. Units -- 10 -- ns tr VDS = 300 V, ID = 2 A, -- 25 -- ns td(off) RG = 25 Ω -- 25 -- ns tf -- 30 -- ns Qg -- 90 -- nC -- 1.5 -- nC -- 4.0 -- nC Min Typ. Max. Units IS -- -- 2 ISM -- -- 8 Qgs VDS = 480 V,ID = 2 A, VGS = 10 V Qgd Source-Drain Diode Characteristics Symbol Parameter Test Conditions A VSD IS = 2 A , VGS = 0 V -- -- 1.4 V trr IS = 2 A , VGS = 0 V -- 230 -- ns Qrr diF/dt = 100A/μs -- 1 -- nC Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 19mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. ISD≦2A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSQ2N60] © Bruckewell Technology Corporation Rev. A -2014 MSQ2N60 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSQ2N60] © Bruckewell Technology Corporation Rev. A -2014