IRF730B/IRFS730B IRF730B/IRFS730B www.kersemi.com 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. • • • • • • 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 GD S IRF Series TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IRF730B IRFS730B Units V 5.5 5.5 * A 3.5 3.5 * A 22 22 * A 400 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 330 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 7.3 5.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 73 0.58 38 0.3 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Max. IRF730B 1.71 IRFS730B 3.31 Units °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.4 VDS = 400 V, VGS = 0 V -- -- 10 µA VDS = 320 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 0.83 1.0 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.75 A -- 4.5 -- S -- 790 1000 pF -- 80 100 pF -- 20 26 pF -- 15 40 ns -- 55 120 ns -- 85 180 ns -- 50 110 ns -- 25 33 nC -- 4.3 -- nC -- 11 -- nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM -- -- 22 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) -- 265 -- ns -- 2.32 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 19mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.kersemi.com IRF730B/IRFS730B Electrical Characteristics IRF730B/IRFS730B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C 0 10 o 25 C o -55 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 5 1 10 VGS = 10V 3 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 4 VGS = 20V 2 1 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0 -1 0 3 6 9 12 15 18 10 0.2 0.4 0.6 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 80V 1500 Ciss 1000 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 Crss VGS, Gate-Source Voltage [V] 10 Capacitance [pF] 0.8 ID, Drain Current [A] VDS = 200V 8 VDS = 320V 6 4 2 ※ Note : ID = 5.5 A 0 -1 10 0 0 10 1 10 0 3 6 9 12 15 18 21 24 27 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics IRF730B/IRFS730B Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.75 A 0.5 0.0 -100 200 0 Figure 7. Breakdown Voltage Variation vs Temperature 100 150 2 10 2 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 10 1 ms ID, Drain Current [A] 10 ms DC 0 10 10 ms 100 ms 0 10 -1 10 100 µs 1 10 1 ms DC -1 10 ※ Notes : ※ Notes : o o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 Figure 9-2. Maximum Safe Operating Area for IRFS730B 6 5 ID, Drain Current [A] 4 3 2 1 www.kersemi.com 50 75 100 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF730B 0 25 200 Figure 8. On-Resistance Variation vs Temperature 10 10 50 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] ID, Drain Current [A] -50 o o 125 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 150 IRF730B/IRFS730B 10 0 D = 0 .5 ※ N o te s : 1 . Z θ J C (t) = 1 .7 1 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 0 .1 10 0 .0 5 -1 PDM 0 .0 2 θ JC (t), T h e r m a l R e s p o n s e Typical Characteristics 0 .0 1 t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 3 .3 1 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 θ JC (t), T h e r m a l R e s p o n s e Figure 11. Transient Thermal Response Curve for IRF730B PDM 0 .0 1 Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS730B www.kersemi.com IRF730B/IRFS730B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ID (t) VDS (t) VDD tp Time IRF730B/IRFS730B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop VDD TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 www.kersemi.com IRF730B/IRFS730B Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) (1.00x45°) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 www.kersemi.com IRF730B/IRFS730B Package Dimensions