TAK_CHEONG TFF4N65

TAK CHEONG
®
N-Channel Power MOSFET
3.9A, 650V, 3.0Ω
1 = Gate
2 = Drain
3 = Source
1
General Description
2
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
3
TO-220FP
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
Features
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
Value
Units
VDSS
Drain- Source Voltage
650
V
VGSS
Gate-Source Voltage
±30
V
Drain Current
3.9
A
Drain Current Pulsed
15.6
A
40
W
0.32
W/℃
157
mJ
150
℃
- 55 to +150
℃
Value
Unit
ID
IDM
PD
Power Dissipation
Derating factor above 25℃
EAS
Single Pulsed Avalanche Energy
TJ
Operating Junction Temperature
Tstg
(Note 2)
(Note 1)
Storage Temperature Range
Notes:
1. L=19mH, IAS=3.9A, VDD=50V, RG=50Ω, Starting TJ=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
3.16
℃/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
℃/W
Number: DB-197
March 2010, Revision B
Page 1
TFF4N65
SEM ICON DU CTO R
TAK CHEONG
®
SEM ICON DU CTO R
ELECTRICAL CHARACTERISTICS
Off Characteristics (TA = 25°C unless otherwise noted)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Sounce Breakdown Voltage
VGS = 0V, ID = 250uA
650
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
--
--
10
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
VGS (th)
Gate Threshold Voltage
Parameter
VDS = VGS , ID = 250uA
Test Conditions
2.0
--
4.0
V
RDS(ON)
On-Resistance
VGS = 10V, ID = 1.95A
--
1.85
3.0
Ω
Min.
Typ.
Max.
Unit
Dynamic Characteristics
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
571
740
pF
--
70
90
pF
--
18
24
pF
Min.
Typ.
Max.
Unit
--
21
52
nS
--
46
102
nS
--
102
214
nS
Switching Characteristics
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
Test Conditions
VDD = 325V, ID = 3.9A,
RG = 25Ω
(Note 3 & 4)
tr
Turn-Off Fall Time
--
34
78
nS
Qg
Total Gate Charge
VDS = 520V, ID = 3.9A,
--
18.6
28
nC
Qgs
Gate-Source Charge
VGS = 10V
--
3.0
--
nC
Qgd
Gate-Drain Charge
(Note 3 & 4)
--
8.0
--
nC
Min.
Typ,
Max.
Unit
--
--
3.9
A
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
15.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 3.9A
--
--
1.5
V
Trr
Reverse Recovery Time
VGS = 0V, IS = 3.9A,
--
392
--
nS
--
1.57
--
uC
Qrr
dIF / dt = 100A/uS
Reverse Recovery Charge
(Note 3)
Notes:
3. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%.
4. Basically not affected by working temperature.
Number: DB-197
March 2010, Revision B
Page 2
TAK CHEONG
®
SEM ICON DU CTO R
TYPICAL CHARACTERISTICS
Number: DB-197
March 2010, Revision B
Page 3
TAK CHEONG
®
SEM ICON DU CTO R
Number: DB-197
March 2010, Revision B
Page 4
TAK CHEONG
®
SEM ICON DU CTO R
Number: DB-197
March 2010, Revision B
Page 5
TAK CHEONG
®
SEM ICON DU CTO R
Number: DB-197
March 2010, Revision B
Page 6
TAK CHEONG
®
SEM ICON DU CTO R
TO220FP PACKAGE OUTLINE
DIM
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
A1
2.7
3.3
0.106
0.130
A2
15.0
15.7
0.591
0.618
A4
6.2
6.6
0.244
0.260
b
0.5
0.9
0.020
0.035
b1
0.9
1.2
0.035
0.047
b2
1.0
1.2
0.039
0.047
c
0.4
0.6
0.016
0.024
D
9.8
10.3
0.386
0.406
e
2.34
2.74
0.092
0.108
E
4.3
4.6
0.169
0.181
E1
2.5
2.9
0.098
0.114
F
2.6
3.0
0.102
0.118
L
10.3
10.7
0.406
0.421
ØP
3.0
3.4
0.118
0.134
2.7
0.091
0.106
Q
2.3
Note: Single Gauge
Number: DB-197
March 2010, Revision B
Page 7
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A