MSQ5N50

MSQ5N50
N-Channel Enhancement Mode Power MOSFET
Description
The MSQ5N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The QFN-5X6
package which has been designed to achieve very low
on-state resistance providing also one of the
best-in-class figure of merit (FOM)
Features
• RDS(on) = 1.50Ω @VGS = 10 V
• Low gate charge ( typical 11 nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant package
Application
• Ballast
• Inverter
• Switching applications
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
5
A
Drain Current -Continuous (TC=100°C)
3.0
A
IDM
Drain Current Pulsed
20
A
EAS
Single Pulsed Avalanche Energy
305
mJ
EAR
Repetitive Avalanche Energy
4.6
mJ
ID
Publication Order Number: [MSQ5N50]
© Bruckewell Technology Corporation Rev. A -2014
MSQ5N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
dv/dt
PD
TJ,TSTG
Value
Unit
Peak Diode Recovery dv/dt
4.5
V/ns
Power Dissipation (TC = 25 °C)
60
W
- Derate above 25°C
0.4
W/°C
-55 to +150
°C
Operating and Storage Temperature Range
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
Parameter
Value
Units
2
Rthic
Typical thermal resistance
°C/W
32
RθJA
Static Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID=250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 500 V , VGS = 0 V
VDS = 400 V , VGS = 0 V , Tj = 125°C
Min
Typ.
Max.
Units
500
--
--
V
--
0.6
--
--
--
1
10
μA
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
VGS
VDS = VGS , ID = 250μA
2.0
--
4.0
V
*RDS(ON)
VGS = 10 V , ID = 2.5 A
--
1
1.4
Ω
Min
Typ.
Max.
Units
--
480
--
pF
--
66
--
pF
CRSS
--
5
--
pF
td(on)
--
13
--
ns
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
tr
VDS = 250 V, ID = 5 A,
--
22
--
ns
td(off)
RG = 25 Ω
--
28
--
ns
--
20
--
ns
--
11
--
nC
--
2.5
--
nC
--
5
--
nC
tf
Qg
Qgs
VDS = 400 V,ID = 5 A,
VGS = 10 V
Qgd
Publication Order Number: [MSQ5N50]
© Bruckewell Technology Corporation Rev. A -2014
MSQ5N50
N-Channel Enhancement Mode Power MOSFET
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
IS
--
--
5
ISM
--
--
20
Units
A
VSD
IS = 18 A , VGS = 0 V
--
--
1.4
V
trr
IS = 18 A , VGS = 0 V
--
260
--
ns
Qrr
diF/dt = 100A/μs
--
2
--
nC
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 22mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. ISD≦5A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSQ5N50]
© Bruckewell Technology Corporation Rev. A -2014
MSQ5N50
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSQ5N50]
© Bruckewell Technology Corporation Rev. A -2014