MSF2N40

MSF2N40
400V N-Channel MOSFET
Description
The MSF2N40 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=400V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
2.0
A
Drain Current -Continuous (TC=100°C)
1.8
A
IDM
Drain Current Pulsed
5.4
A
EAS
Single Pulsed Avalanche Energy
100
mJ
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
ID
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF2N40
400V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
TL
TPKG
PD
Value
Unit
300
°C
260
°C
Total Power Dissipation(@TC = 25 °C) 44 W
24
W
Derating Factor above 25 °C
0.3
W/°C
-55 to +150
°C
150
°C
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TSTG
Operating and Storage Temperature Range
TJ
Storage Temperature
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=5.5A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤5.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
Rthjc
Typical thermal resistance
2.87
RθJA
Typical thermal resistance
62.5
Units
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS
VDS = VGS,ID = 250μA
2.0
--
4.0
V
*RDS(ON)
VGS = 10 V,ID = 1.0 A
--
1.0
1.5
Ω
BVDSS
VGS = 0 V , ID = 250μA
400
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
--
0.4
--
--
--
IDSS
VDS = 400 V , VGS = 0 V
VDS = 320 V , VGS = 0 V , TC= 125°C
1
10
μA
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
670
870
pF
--
95
125
pF
--
16
21
pF
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF2N40
400V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
td(on)
Min
Typ.
Max.
Units
--
20
50
ns
tr
VDS = 200 V, ID = 5.5 A,
--
50
110
ns
td(off)
RG = 25 Ω
--
90
190
ns
--
55
120
ns
--
25
33
nC
--
5.0
--
--
10.0
--
Min
Typ.
Max.
IS
--
--
2
ISM
--
--
2.5
tf
Qg
Qgs
VDS = 320 V,ID = 5.5 A,
VGS = 10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Test Conditions
Units
A
VSD
IS = 2 A , VGS = 0 V
--
--
1.5
V
trr
IS = 2 A , VGS = 0 V
--
220
--
ns
Qrr
diF/dt = 100A/μs
--
2
--
μC
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, RG=25W, Starting TJ=25℃
3. ISD≦2A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF2N40
400V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF2N40
400V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF2N40
400V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF2N40]
© Bruckewell Technology Corporation Rev. A -2014