MSF6N40

MSF6N40
N-Channel Enhancement Mode Power MOSFET
Description
The MSF6N40 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
5.5
A
Drain Current -Continuous (TC=100°C)
3.5
A
IDM
Drain Current Pulsed
16.4
A
EAS
Single Pulsed Avalanche Energy
240
mJ
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
ID
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N40
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
TL
TPKG
PD
Value
Unit
300
°C
260
°C
Total Power Dissipation (TC=25°C)
38
W
Derating Factor above 25 °C
0.3
W/°C
-55 to +150
°C
150
°C
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TSTG
Operating and Storage Temperature Range
TJ
Storage Temperature
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=5.5A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤5.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Max.
RθJC
Thermal Resistance, Junction-to-Case
3.3
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Units
°C/W
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
4.0
V
VGS
VDS = VGS, ID = 250μA
*RDS(ON)
VGS = 10 V , ID = 2.75 A
--
0.8
1.0
Ω
BVDSS
VGS = 0 V , ID = 250μA
400
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 400 V , VGS = 0 V
VDS = 320 V , VGS = 0 V , Tj= 125°C
IGSSF
VDS = 30 V, VDS = 0 V
IGSSR
VDS = -30 V, VDS = 0 V
Dynamic Characteristics
Symbol
Test Conditions
td(on)
2.0
0.4
--
--
1
10
uA
100
nA
--
--
-100
nA
Min
Typ.
Max.
Units
--
20
50
ns
tr
VDS = 200 V, ID = 5.5 A,
--
50
110
ns
td(off)
RG = 25 Ω
--
90
190
ns
--
55
120
ns
tf
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N40
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
670
870
pF
--
95
125
pF
--
16
21
pF
--
25
33
nC
--
5.0
--
--
10.0
--
Min
Typ.
Max.
IS
--
--
5.5
ISM
--
--
22
--
--
1.5
V
--
220
--
ns
--
2
--
uC
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Qg
Qgs
VDS = 320 V,ID = 5.5 A,
VGS = 10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Test Conditions
VSD
trr
Qrr
Units
A
IF = 5.5 A , VGS = 0
IF = 5.5 A , VGS = 0 , dIF/dt=100A/μs
Notes;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=5.5 A, VDD=50V, RG=25W, Starting TJ =25°C
3. ISD≤5.5 A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N40
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N40
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSF6N40
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014