MSQ6N40

MSQ6N40
N-Channel Enhancement Mode Power MOSFET
Description
The MSQ6N40 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The QFN-5X6
package which has been designed to achieve very low
on-state resistance providing also one of the
best-in-class figure of merit (FOM)
Features
• BVDSS=400V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
3,000/Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
5.5
A
Drain Current -Continuous (TC=100°C)
3.5
A
IDM
Drain Current Pulsed
16.4
A
EAS
Single Pulsed Avalanche Energy
240
mJ
EAR
Repetitive Avalanche Energy
10
mJ
ID
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSQ6N40
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
dv/dt
PD
Value
Unit
Peak Diode Recovery dv/dt
5.5
V/ns
Power Dissipation (TC = 25 °C)
38
W
- Derate above 25°C
0.3
W/°C
-55 to +150
°C
150
°C
300
°C
260
°C
TSTG
Operating and Storage Temperature
TJ
Storage Temperature
TL
TPKG
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
Parameter
Value
RθJC
Typical thermal resistance, Junction-to-Case
3.3
RθJA
Typical thermal resistance, Junction-to-Ambient
62.5
°C/W
Static Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID=250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
Units
VDS = 400 V , VGS = 0 V
VDS = 320 V , VGS = 0 V , Tj = 125°C
Min
Typ.
Max.
Units
400
--
--
V
--
0.6
--
--
--
1
10
μA
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
VGS
VDS = VGS , ID = 250μA
2.0
--
4.0
V
*RDS(ON)
VGS = 10 V , ID = 2.75 A
--
0.8
1.0
Ω
Min
Typ.
Max.
Units
--
20
50
ns
Dynamic Characteristics
Symbol
Test Conditions
td(on)
tr
VDS = 200 V, ID = 5.5 A,
--
50
110
ns
td(off)
RG = 25 Ω
--
90
190
ns
--
55
120
ns
tf
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSQ6N40
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
670
870
pF
--
95
125
pF
--
16
21
pF
--
25
33
nC
--
5.0
--
nC
--
10
--
nC
Min
Typ.
Max.
Units
IS
--
--
5.5
ISM
--
--
22
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
CRSS
Qg
Qgs
VDS = 320 V,ID = 5.5 A,
VGS = 10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
A
VSD
IS = 5.5 A , VGS = 0 V
--
--
1.5
V
trr
IS = 5.5 A , VGS = 0 V
--
220
--
ns
Qrr
diF/dt = 100A/μs
--
2
--
nC
Notes;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=5.5 A, VDD=50V, RG=25W, Starting TJ =25°C
3. ISD≤5.5 A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSQ6N40
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON-RESISTANCE VS DRAIN CURRENT AND
FIG.4-BODY DIODE FORWARD VLOTAGE VARIATION
GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSQ6N40
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS. TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS.
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014
MSQ6N40
N-Channel Enhancement Mode Power MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
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purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSQ6N40]
© Bruckewell Technology Corporation Rev. A -2014