VS-4EGH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum temperature operating junction • For PFC CRM/CCM, snubber operation Cathode • Low forward voltage drop Anode • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AA (SMB) • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package DO-214AA (SMB) IF(AV) 4A VR 600 V VF at IF 1.2 V State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. trr typ. 30 ns TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS 600 Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TL = 76 °C (1) IFSM TJ = 25 °C Non-repetitive peak surge current Operating junction and storage temperatures VALUES V 4 TJ, TStg UNITS 55 A -55 to +175 °C Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 4 A - 1.6 1.95 IR = 100 μA IF = 4 A, TJ = 150 °C - 1.2 1.4 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 5.7 - UNITS V μA pF Revision: 10-Jul-15 Document Number: 94775 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. Reverse recovery charge - 30 - - 35 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 35 TJ = 25 °C - 22 - - 37 - - 3.4 - - 5.2 - TJ = 25 °C - 40 - TJ = 125 °C - 103 - MIN. TYP. MAX. UNITS °C TJ = 125 °C Qrr UNITS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C IRRM MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C Peak recovery current TYP. IF = 4 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -55 - 175 Thermal resistance, junction to case RthJC (1) - - 18 Thermal resistance, junction to ambient RthJA (1) - - 90 °C/W 0.1 Approximate Weight g 0.003 Marking device Case style DO-214AA (SMB) oz. 4H6 100 100 175 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Mounted on PCB with minimum pad size TJ = 175 °C TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0.0001 0.5 1.0 1.5 2.0 2.5 3.0 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 94775 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGH06-M3 www.vishay.com Vishay Semiconductors 8 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 7 RMS Limit 6 5 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 4 3 2 1 0 1 0 100 200 300 400 500 0 600 2 3 4 5 6 IF(AV) - Average Forward Current (A) VR - Reverse Voltage (V) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 200 50 180 45 160 IF = 4 A, 125 °C 40 140 120 trr (ns) Allowable Case Temperature (°C) 1 100 DC 80 35 30 IF = 4 A, 25 °C 25 60 20 40 typical value 15 20 10 0 0 1 2 3 4 100 6 5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 250 Qrr (nC) 200 IF = 4 A, 125 °C 150 100 IF = 4 A, 25 °C 50 typical value 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 10-Jul-15 Document Number: 94775 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGH06-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 (4) Qrr (2) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 4 E G H 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: E = single diode 4 - G = SMB package 5 - Process type, 6 - Voltage code (06 = 600 V) 7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N VS-4EGH06-M3/5BT QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 Revision: 10-Jul-15 Document Number: 94775 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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