MURS120-M3 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated pellet chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-214AA (SMB) TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V IFSM 40 A MECHANICAL DATA trr 25 ns Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VF 0.71 V TJ max. 175 °C Package DO-214AA (SMB) Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL VALUE Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V PARAMETER MD Device marking code Maximum average forward rectified current at (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range UNIT TL = 155 °C TL = 145 °C IF(AV) 1.0 2.0 A IFSM 40 A TJ, TSTG -65 to +175 °C Revision: 20-Feb-15 Document Number: 89485 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward voltage IF = 1.0 A TJ = 25 °C TJ = 150 °C TJ = 25 °C Maximum instantaneous reverse current at rated DC blocking voltage TJ = 150 °C SYMBOL VF (1) IR (1) VALUE 0.875 0.71 2.0 UNIT V μA 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM trr 35 ns Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/μs, recovery to 1.0 V tfr 25 ns SYMBOL VALUE UNIT RJL 13 °C/W Note (1) Pulse test: t = 300 μs, duty cycle 2 % p THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MURS120-M3/52T 0.096 52T 750 7" diameter plastic tape and reel MURS120-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel Revision: 20-Feb-15 Document Number: 89485 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Instantaneous Reverse Leakage Current (µA) Average Forward Rectified Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 TJ = 100 °C 0.1 TJ = 25 °C 0.01 175 0 20 40 80 60 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 50 1000 Junction Capacitance (pF) Peak Forward Surge Current (A) 1 0.001 0 40 30 20 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0 1 10 0.1 100 Number of Cycles at 60 Hz 100 10 TJ = 125 °C TJ = 100 °C 1 0.1 0.01 0.2 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1 10 100 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Instantaneous Forward Current (A) TJ = 175 °C 10 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 5 - Typical Junction Capacitance Fig. 3 - Typical Instantaneous Forward Characteristics Revision: 20-Feb-15 Document Number: 89485 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MURS120-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 20-Feb-15 Document Number: 89485 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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