VS-4EGU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 4 A FRED Pt® FEATURES • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM, snubber operation • Low forward voltage drop Cathode • Low leakage current Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC®-JESD 47 DO-214AA (SMB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION / APPLICATIONS Package DO-214AA (SMB) IF(AV) 4A VR 600 V VF at IF 0.94 V trr typ. 45 ns State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VRRM Average rectified forward current IF(AV) TL = 103 °C (1) IFSM TJ = 25 °C Non-repetitive peak surge current Operating junction and storage temperatures VALUES 600 Peak repetitive reverse voltage V 4 TJ, TStg UNITS 100 A -55 to +175 °C Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 4 A - 1.12 1.3 1.15 IR = 100 μA IF = 4 A, TJ = 150 °C - 0.94 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 6.8 - UNITS V μA pF Revision: 10-Jul-15 Document Number: 94774 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. Reverse recovery charge - 45 - - 50 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 65 TJ = 25 °C - 39 - - 61 - - 5.8 - - 7.7 - TJ = 25 °C - 119 - TJ = 125 °C - 251 - MIN. TYP. MAX. UNITS °C TJ = 125 °C Qrr UNITS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C IRRM MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C Peak recovery current TYP. IF = 4 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -55 - +175 Thermal resistance, junction to case RthJC (1) - - 18 Thermal resistance, junction to ambient RthJA (1) - - 90 °C/W 0.1 Approximate Weight g 0.003 Marking device Case style DO-214AA (SMB) oz. 4U6 100 100 175 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Mounted on PCB with minimum pad size Tj = 175 °C Tj = 150 °C 1 Tj = 25 °C 0.1 0.0 10 150 °C 125 °C 1 0.1 25 °C 0.01 0.001 0.0001 0.5 1.0 1.5 2.0 2.5 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jul-15 Document Number: 94774 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGU06-M3 www.vishay.com Vishay Semiconductors 6 RMS Limit 5 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 4 2 1 1 0 0 100 200 300 400 500 600 0 1 2 3 4 5 6 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 200 100 180 90 160 80 140 DC 120 70 trr (ns) Allowable Case Temperature (°C) D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 3 100 50 80 40 60 30 40 0 1 2 3 4 IF = 4 A, 25 °C typical value 20 100 6 5 IF = 4 A, 125 °C 60 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 400 350 IF = 4 A, 125 °C Qrr (nC) 300 250 IF = 4 A, 25 °C 200 150 100 typical value 50 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 10-Jul-15 Document Number: 94774 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4EGU06-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 4 E G U 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: E = single diode 4 - G = SMB package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-4EGU06-M3/5BT QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 Revision: 10-Jul-15 Document Number: 94774 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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