Product Sheet

V I S H AY I N T E R T E C H N O L O G Y, I N C .
Diodes
Diodes - TO-277A (SMPC) Package for Smartphone Chargers
V10PN50 and V15PN50
50 V TMBS® Rectifiers for Smartphone Chargers
Feature Industry-Low VF of 10 A and 15 A
KEY BENEFITS
• High current density
–– 10 A and 15 A forward currents
–– Low-profile TO-277A (SMPC) package with typical height of 1.1 mm
• Low forward voltage drop down to 0.4 V at 10 A and 125 ºC
–– Low power losses, high efficiency
• Maximum operating junction temperature of 150 °C
• Trench MOS Schottky technology
APPLICATIONS
• Low-voltage, high-frequency DC/DC converters, freewheeling diodes, and polarity
protection applications in smartphone chargers
RESOURCES
• Datasheet: V10PN50 - www.vishay.com/doc?89965
V15PN50 - www.vishay.com/doc?89966
• For technical questions contact [email protected]
• Material categorization: For definitions of compliance, please see
www.vishay.com/doc?99912
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
PRODUCT SHEET
1/2
VMN-PT0378-1308
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Vishay General Semiconductor
V I S H AY I N T E R T E C H N O L O G Y, I N C .
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Diodes - TO-277A (SMPC) Package for Smartphone Chargers
Diodes
V10PN50
V10PN50
www.vishay.com
Ultra Low VF = 0.30 V at IF =Vishay
5A
V10PN50
Generaland
Semiconductor
V10PN50
V15PN50
www.vishay.com
Vishay
General
Semiconductor
www.vishay.com
V10PN50
Vishay General Semiconductor
FEATURES
V10PN50
High Current Density• Very
Surface
www.vishay.com
low profilewww.vishay.com
-Mount
typical height of 1.1 mm
Vishay
General Semiconductor
High
Current Density Surface
Mount
TMBS
eSMP
Series
Vishay
General
Semiconductor
High
Current
Density
Surface
Mount
Trench
MOS
Barrier
Schottky
Rectifier
• Ideal
for automated
placement
High
Current
Density
Surface
Mount
Trench MOS Barrier Schottky
Rectifier
•V
Trench
technology
Trench
MOS
Barrier
Schottky
Ultra Low
VF = 0.30
at IFMOS
= 5 Schottky
ARectifier
High Current Density Su
High Current
Density
Surface
Mount
K
urrent Density Surface Mount
Ultra
Low
V
=
0.30
V
at
I
=
5
A
•
Low
forward
voltage
drop,
low power losses
Trench
MOS
Barrier
Schottky
Rectifier
F
F
Ultra Low
VF = 0.30
V at IF = 5 ARectifier
Trench
MOS Barrier Scho
Trench MOS
Barrier
Schottky
FEATURES
MOS Barrier Schottky Rectifier
• High efficiency operation
®
®
FEATURES
1 Ultra Low VF = 0.30
Very
typical
height of 1.1LFmm
Ultra Low
VFof= 0.26 V at
V
atlow
IFMSL
=profile
5level
A - 1,
••FEATURES
Meets
per J-STD-020,
maximum
peak
Ultra Low VF = 0.30 V at IF = 5 ATMBS® eSMP® Series
• 260
Very°C
low profile - typical height of 1.1 mm
®
®
s
•• Very
Ideal low
for automated
placement
profile - typical
height of 1.1 mm
Ideal
for
automated
placement
••FEATURES
Material
categorization:
For definitions of compliance
Trench
MOS
Schottky
technology
•
Ideal
for
automated
placement
K
Very low
profile
- typical
height of
•• please
Trench
MOS
Schottky
technology
see
www.vishay.com/doc?99912
®
® 1.1 mm
® height
®1.1 mm
TO-277A
(SMPC)
• Very low profileTMBS
- typical
of
Low forward
low power
losses
TMBS drop,
eSMP
Series
eSMP Series
K
• Trench
MOS voltage
Schottky
technology
Ideal
for
automated
placement
•
Low
forward
voltage
drop,
low
power
losses
K
• Ideal for automated placement
•• Low
High forward
efficiency
operation
K
Anode 1
voltage drop, low power losses
TYPICAL
APPLICATIONS
Trench
MOS
Schottky
technology
•• High
efficiency
operation
1
• Trench MOS Schottky
technology
Anode 2
Meets
MSL level
K1, per J-STD-020, LF maximum peak of
K Cathode
•
High
efficiency
operation
www.vishay.com
1
For
use
in
low
voltage
high
frequency
DC/DC
converters,
Low
forward
voltage
drop,
low
power
LFlosses
maximum
peak of
•
Meets
MSL
level
1,
per
J-STD-020,
260
°C
Vishay
General
Semiconductor
• Low forward voltage drop, low power2losses
1
• 260
Meets
MSL and
levelpolarity
1, per J-STD-020,
LF maximum peak of
freewheeling,
protection applications.
°C
2
•
High
efficiency
operation
• Material
• High efficiency operation
260 °C categorization: For definitions of compliance
2
1
•• Material
categorization:
For definitions
of compliance
please
see
www.vishay.com/doc?99912
Meets MSL
level 1, per J-STD-020,
LF1 maximum
peak of
TO-277A
(SMPC)LF maximum peak of
• Meets MSL level 1, per
J-STD-020,
•
Material
categorization:
For definitions of compliance
please
see
www.vishay.com/doc?99912
MECHANICAL
DATA
TO-277A (SMPC) 2
260
°C
2
260
°C
PRIMARY
CHARACTERISTICS
- V10PN50
please see www.vishay.com/doc?99912
TO-277A
(SMPC)
K
Anode 1
Case:
TO-277A
(SMPC)
•TYPICAL
Material
categorization:
For definitions of compliance
APPLICATIONS
IF(AV)
10
K
Anode
• Material categorization:
For definitions
of Acompliance
Cathode
Anode 1
2
Molding
compound
meets UL 94 V-0 flammability rating
TYPICAL
APPLICATIONS
please
see
www.vishay.com/doc?99912
K
Anode
1
TO-277A
(SMPC) DC/DC converters,
Ultra
V
at
I
=
5
A
TO-277A (SMPC)
For
use
in
low
voltage
high
frequency
please see www.vishay.com/doc?99912
Cathode
Anode 2
F
VRRM
50 V Low VF = 0.26Base
TYPICAL
APPLICATIONS
P/N-M3
- halogen-free, RoHS-compliant, and
Cathode
Anode 2
For
use in lowand
voltage
high
frequency
DC/DC converters,
freewheeling,
polarity
protection
applications.
180
A
IFSM
commercial
grade
K high frequency
Anode 1
K
Anode 1
For use in lowand
voltage
DC/DC converters,
freewheeling,
polarity
protection
applications.
FEATURES
TYPICAL
APPLICATIONS
at IF = 10 ACathode
0.40 V
TYPICALVFAPPLICATIONS
Cathode
2
freewheeling, Matte
and polarity
applications.
Anode 2
tin protection
plated Anode
leads,
solderable per
Terminals:
•MECHANICAL
Very
-DATA
typical
height
of 1.1 mm
For
uselow
in profile
low
high
frequency
DC/DC converters,
®
TJ max.
150 °Cconverters,
ForPRIMARY
use in low
voltage
frequency
DC/DC
J-STD-002
and voltage
JESD
22-B102
TMBS®higheSMP
Series
CHARACTERISTICS
- V10PN50
MECHANICAL
DATA
freewheeling,
and
polarity
applications.
•M3
Ideal
formeets
automated
placement
Case:
TO-277A
(SMPC)
freewheeling,
and
polarity protection applications.
suffix
JESD
201protection
class 1A whisker
test
PRIMARY
MECHANICAL
DATA
I CHARACTERISTICS - V10PN50
10 A
Case:
TO-277A
(SMPC)
Molding
compound
meets
UL 94 V-0 flammability rating
PRIMARYIF(AV)
CHARACTERISTICS - V10PN50
•
Trench
MOS
Schottky
technology
10
A
F(AV)
Case:
TO-277A
(SMPC)
VRRM K
50 V
Molding
compound
meets UL 94 V-0
flammability rating
Base P/N-M3
- DATA
halogen-free,
RoHS-compliant,
and
I
10 A
•MECHANICAL
Low
forward
voltage
drop, UL
low 94
power
losses
MECHANICAL
DATA
VIF(AV)
50 VA
Molding
compound
meets
V-0
flammability
RRM
PRIMARY
CHARACTERISTICS
- V15PN50rating
PRIMARY
CHARACTERISTICS
- 180
V10PN50
Base
P/N-M3
- halogen-free,
RoHS-compliant,
and
MAXIMUM
RATINGS - V10PN50
(TAV = 25 °C unless otherwise
noted)
commercial
grade
VFSM
50
Case:
(SMPC)
RRM
Base
P/N-M3
- halogen-free, RoHS-compliant,
and
•commercial
High TO-277A
efficiency
operation
180
Case: TO-277A
(SMPC)
grade
IMatte
15
A
10 AAV
IFSM
0.40
VF atIIF(AV)
F(AV)
F = 10 A
PARAMETER
SYMBOL
UNITrating
Terminals:
tinV10PN50
plated
solderable
per
Molding
compound
meets
UL 94 leads,
V-0 flammability
180 A
IFSM
commercial
grade
1
Molding compound
meets
UL
94
V-0
flammability
rating
I
=
10
A
0.40
V
VF at
•
Meets
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level
1,
per
J-STD-020,
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maximum
peak
of
F
VMatte
50
V
50 V
TVRRM
max.
150
°C
Terminals:
tin
plated leads,
solderable
per
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J-STD-002
and
JESD
22-B102
Base P/N-M3
- halogen-free,
RoHS-compliant,
and
10halogen-free,
A
0.40 V
VF atJIF =-code
Device
marking
10N5
Base
P/N-M3
RoHS-compliant,
and
Terminals:
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tin
plated
leads,
solderable
per
260
°C
TJIFSM
max.
°C
2 150
J-STD-002
and
JESD
22-B102
200
A
IFSMJESD 201 class 1A whisker
180 A
M3 suffix meets
test
commercial
grade
commercial
grade
TJ max. peak reverse voltage
150 °C
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and JESD
22-B102
Maximum
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V
suffixVmeets
201 class
1A whisker
test
•M3
Material
For definitions
of
at Matte
IF =JESD
15 A tin
0.41
Vcompliance
at IF = 10 A
0.40 V
VF repetitive
F categorization:
Terminals:
plated
leads,
solderable
per
M3
suffix
meets
JESD 201 class 1A whisker test
Terminals: Matte tin plated leads, solderable per
(1)
please
see
www.vishay.com/doc?99912
10
I
T
max.
150
°C
F
TJ max. TO-277A (SMPC)
150 °C
J
J-STD-002 and JESD 22-B102
A
Maximum
average
forward
rectified
current
(fig.
1)
J-STD-002
and
JESD
22-B102
MAXIMUM RATINGS - V10PN50 (TA = 25 °C unless otherwise
noted)
(2)
M3IFsuffix
meets JESD 201 5.3
class 1A whisker test
M3MAXIMUM
suffix meets JESD
201 class
1A whisker (T
test = 25 °C unless otherwise
RATINGS
- V10PN50
noted)
FEATURES
50 V
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
180 A
0.40 V
150 °C
range
B
r pad area
Revision 18-Dec-12
sine-wave
A
PARAMETER
SYMBOL
V10PN50
UNIT
TYPICAL
APPLICATIONS
MAXIMUM
RATINGS
(TA = 25 °C unless otherwise
noted)
35
V
Maximum
DC reverse
voltage - V10PN50
VDC
Cathode
Anode 2
PARAMETER
SYMBOL
V10PN50
UNIT
Device
marking
code
10N5
For
use
in
low
voltage
high
frequency
DC/DC
converters,
PARAMETER
SYMBOL
V10PN50
UNIT
Peak
forward
surge
current
10
ms
single
half
sine-wave
MAXIMUM
RATINGS
- V15PN50
(TA = 25A °C unless
MAXIMUM
RATINGS - V10PN50 (TA = 25 °C unless otherwise
noted)
IFSM
180
Device
markingon
code
freewheeling,
and
polarity 10N5
protection
applications.
otherwise
noted)
superimposed
rated load
Maximum
repetitive
VRRM
50
V
Device
marking
codepeak reverse voltage
10N5
PARAMETER
PARAMETER
SYMBOL
V10PN50
UNIT
Maximum
peak
reverse
voltage
50+ 150
V
SYMBOL
V10PN50
T(1)
- 40 to
°C
Operating repetitive
junction and
storage
temperature
range UNIT
TJVI,FRRM
10
STG
Maximum
repetitive
peak reverse
voltage
V
50
V
RRM marking code
A
Maximum
average
forward
rectified
current (fig. 1)
Device
Device
marking
code
MECHANICAL
DATA 10N5
10
IIF (1)
(2)
10N5
5.3
F (1)
Notes
PRIMARY
CHARACTERISTICS
V15PN50
A
Maximum average
forward rectified current -(fig.
1)
10
I
F
(2)
Case:
(SMPC)
IFRRMTO-277A
5.3
Maximum
repetitive
peak reverse
repetitive
peak
voltage
V
50
V
(1) Maximum
A
average
forward
rectified
current
(fig.
Mounted DC
onIF(AV)
30
mm
xvoltage
30 reverse
mm
2 oz.
pad PCB
35 voltage
V
Maximum
reverse
VRRM
50
V
(2)
15 1)
A
IVFDC
Molding
compound meets5.3
UL 94 V-0 flammabilityV rating
(2) Maximum
(1)
Free
air,
mounted
on
recommended
copper
pad
area
35
DC
reverse
voltage
V
10
I
DC
F
(1)
V
50
V
10
IFPeak
RRM
forward
surge
current
10
ms
single
half
sine-wave
Maximum
average
rectified
current
(fig. 1)
A
Maximum DC
average
forward
rectified current (fig. 1)
Base
P/N-M3
- forward
halogen-free,
RoHS-compliant,
35
V and
reverse
voltage
DC
IIVFSM
180
A
(2)
A
5.3
F
superimposed
on rated
load
(2) forward
surge
current
10 ms single half 200
sine-wave
A
IFSM
IFPeak
5.3
commercial
grade
IFSM
180
A
Peak
forward
surge
current
10
ms
single
half
sine-wave
superimposed
on ratedvoltage
load
DC reverse voltage
35+ 150
V
Maximum
DC
IV
180
A
DC
IF reverse
=
A storage
0.41 V
VF at
,FSM
T
- 40 plated
to
°C
junction
and
TJMaximum
35 temperature range
V
VOperating
STG
Terminals:
Matte tin
leads, solderable
per
superimposed
on15
rated
load
DC
,
T
40
to
+
150
°C
Operating
junction
and
storage
temperature
range
T
J
STG
T
max.
150
°C
Peak forward
surge
current
10 ms single half sine-wave
Peak
forward
J surge current 10 ms single half sine-wave
J-STD-002
and
JESD
22-B102
Notes
A
TSTG
-load
40 180
to + 150
°C
junction
and storage
TJI,FSM
I Operating
180 temperature range
A
rated201
superimposed
on rated
load
M3superimposed
suffix meetson
JESD
class 1A whisker test
(1)FSM
Notes
Mounted on 30 mm x 30 mm 2 oz. pad PCB
Notes:
(1)
Mounted
on
30
mm
x
30
mm
2
oz.
pad
PCB
(2)
Free
air,
mounted
on
recommended
copper
pad
area
Notes
(1)
(2) Operating
junction and -storage
range
, TSTG
40 to + temperature
150
°C
junction
and
storage2temperature
TJOperating
Mounted
on 30 mm
30
oz. pad
PCBrange
Free air, mounted
onx-recommended
copper
pad area°C
40 mm
to + 150
T(2)
J, TMounted
STG
(1)
on 30 mm
30 mm 2 oz. pad
PCB pad area
Free air, mounted
onxrecommended
copper
(2)
Notes
Notes
Free air, mounted
on recommended
copper pad
MAXIMUM
RATINGS
- V15PN50
(TA area
= 25 °C unless otherwise
noted)
(1) Mounted on 30 mm x 30 mm 2 oz. pad PCB
(1) Mounted on 30 mm x 30 mm 2 oz. pad PCB
SYMBOL
V15PN50
UNIT
(2) Free air, mounted on recommended
(2)PARAMETER
copper pad area
Free air, mounted on recommended copper pad area
Device marking
code
15N5
Revision:
18-Dec-12
Document
Number:
89965
1
K
0 (TA = 25 °C unless
fig. 1)
2
eSMP® Series
eSMP Series
V15PN50
V10PN50
10 A
TMBS®
TMBS
Anode 1
FEAT
• Very
• Ideal
• Tren
• Low
• High
• Meet
260 °
• Mate
pleas
TYPIC
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freewh
MECH
Case:
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J-STDM3 suf
otherwis
SYMBO
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IF (2)
VDC
IFSM
TJ, TST
For technical
within
your region: [email protected],
Maximum
repetitivequestions
peak reverse
voltage
[email protected],[email protected]
V
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS
DESCRIBED HEREIN AND THIS DOCUMENT
(1)
15
IF
ARErectified
SUBJECT
TO SPECIFIC
DISCLAIMERS, SET FORTH
AT www.vishay.com/doc?91000
A
Maximum average forward
current
(fig. 1)
IF (2)
6.0
Maximum DC reverse voltage
VDC
35
V
Revision:
18-Dec-12
Document Number: 89965
1
Peak forward
surge current 10 ms single half sine-wave
IFSM
200
A 89965
Revision:
18-Dec-12
Document Number:
1
superimposed
on rated
load within your region: [email protected],
For
technical
questions
[email protected], [email protected]
Revision: 18-Dec-12
Document Number: 89965
1
For
technical
questions
within
your
region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT
IS
SUBJECT
TO CHANGE
WITHOUT NOTICE. THE
DESCRIBED
, TSTG
- 40HEREIN
to [email protected]
+ 150AND THIS DOCUMENT
°C
Operating
junction and
storage
temperature
range
TJPRODUCTS
For DOCUMENT
technical
questions
within
your
region:
[email protected],
[email protected],
ARE
SUBJECT
SPECIFIC
DISCLAIMERS,
FORTH
AT www.vishay.com/doc?91000
THIS
IS
SUBJECT
TOTO
CHANGE
WITHOUT
NOTICE.SET
THE
PRODUCTS
DESCRIBED HEREIN
AND
THIS DOCUMENT
Revision:
18-Dec-12
Revision:
18-Dec-12
Document
Number: 89965
1
1
Document
Number:
89965
Notes:THIS
(1) Mounted
on 30 IS
mm
xSUBJECT
30 mmTO
2 oz.
pad
PCB
(2)
Free
air,
mounted
on
recommended
copper pad
area AND THIS DOCUMENT
ARE
TO
SPECIFIC
DISCLAIMERS,
SET
FORTH
AT www.vishay.com/doc?91000
DOCUMENT
SUBJECT
CHANGE
WITHOUT
NOTICE.
THE
PRODUCTS
DESCRIBED
HEREIN
1
Notes
For
questions within
your region: [email protected], D
For technical questions
within your
[email protected],
[email protected],
[email protected]
ARE [email protected]
SUBJECT
TOregion:
SPECIFIC
DISCLAIMERS, SET FORTH
ATtechnical
www.vishay.com/doc?91000
(1) Mounted
ion: [email protected],
[email protected],
on 30 mm x 30 mm 2 oz. pad PCB
THIS DOCUMENT
IS SUBJECT
TO CHANGE
WITHOUT NOTICE. THE PROD
THIS
IS SUBJECT TO
CHANGE
WITHOUT NOTICE.
DESCRIBED
HEREIN AND
THIS VMN-PT0378-1308
DOCUMENT
PRODUCT
SHEET
2/2 THE PRODUCTS
Free
air, DOCUMENT
mounted
on recommended
pad area
NGE WITHOUT NOTICE.
THE(2)PRODUCTS
DESCRIBED
HEREIN ANDcopper
THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000