V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A (SMPC) Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS® Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density –– 10 A and 15 A forward currents –– Low-profile TO-277A (SMPC) package with typical height of 1.1 mm • Low forward voltage drop down to 0.4 V at 10 A and 125 ºC –– Low power losses, high efficiency • Maximum operating junction temperature of 150 °C • Trench MOS Schottky technology APPLICATIONS • Low-voltage, high-frequency DC/DC converters, freewheeling diodes, and polarity protection applications in smartphone chargers RESOURCES • Datasheet: V10PN50 - www.vishay.com/doc?89965 V15PN50 - www.vishay.com/doc?89966 • For technical questions contact [email protected] • Material categorization: For definitions of compliance, please see www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0378-1308 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Vishay General Semiconductor V I S H AY I N T E R T E C H N O L O G Y, I N C . High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Diodes - TO-277A (SMPC) Package for Smartphone Chargers Diodes V10PN50 V10PN50 www.vishay.com Ultra Low VF = 0.30 V at IF =Vishay 5A V10PN50 Generaland Semiconductor V10PN50 V15PN50 www.vishay.com Vishay General Semiconductor www.vishay.com V10PN50 Vishay General Semiconductor FEATURES V10PN50 High Current Density• Very Surface www.vishay.com low profilewww.vishay.com -Mount typical height of 1.1 mm Vishay General Semiconductor High Current Density Surface Mount TMBS eSMP Series Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier • Ideal for automated placement High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier •V Trench technology Trench MOS Barrier Schottky Ultra Low VF = 0.30 at IFMOS = 5 Schottky ARectifier High Current Density Su High Current Density Surface Mount K urrent Density Surface Mount Ultra Low V = 0.30 V at I = 5 A • Low forward voltage drop, low power losses Trench MOS Barrier Schottky Rectifier F F Ultra Low VF = 0.30 V at IF = 5 ARectifier Trench MOS Barrier Scho Trench MOS Barrier Schottky FEATURES MOS Barrier Schottky Rectifier • High efficiency operation ® ® FEATURES 1 Ultra Low VF = 0.30 Very typical height of 1.1LFmm Ultra Low VFof= 0.26 V at V atlow IFMSL =profile 5level A - 1, ••FEATURES Meets per J-STD-020, maximum peak Ultra Low VF = 0.30 V at IF = 5 ATMBS® eSMP® Series • 260 Very°C low profile - typical height of 1.1 mm ® ® s •• Very Ideal low for automated placement profile - typical height of 1.1 mm Ideal for automated placement ••FEATURES Material categorization: For definitions of compliance Trench MOS Schottky technology • Ideal for automated placement K Very low profile - typical height of •• please Trench MOS Schottky technology see www.vishay.com/doc?99912 ® ® 1.1 mm ® height ®1.1 mm TO-277A (SMPC) • Very low profileTMBS - typical of Low forward low power losses TMBS drop, eSMP Series eSMP Series K • Trench MOS voltage Schottky technology Ideal for automated placement • Low forward voltage drop, low power losses K • Ideal for automated placement •• Low High forward efficiency operation K Anode 1 voltage drop, low power losses TYPICAL APPLICATIONS Trench MOS Schottky technology •• High efficiency operation 1 • Trench MOS Schottky technology Anode 2 Meets MSL level K1, per J-STD-020, LF maximum peak of K Cathode • High efficiency operation www.vishay.com 1 For use in low voltage high frequency DC/DC converters, Low forward voltage drop, low power LFlosses maximum peak of • Meets MSL level 1, per J-STD-020, 260 °C Vishay General Semiconductor • Low forward voltage drop, low power2losses 1 • 260 Meets MSL and levelpolarity 1, per J-STD-020, LF maximum peak of freewheeling, protection applications. °C 2 • High efficiency operation • Material • High efficiency operation 260 °C categorization: For definitions of compliance 2 1 •• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Meets MSL level 1, per J-STD-020, LF1 maximum peak of TO-277A (SMPC)LF maximum peak of • Meets MSL level 1, per J-STD-020, • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA TO-277A (SMPC) 2 260 °C 2 260 °C PRIMARY CHARACTERISTICS - V10PN50 please see www.vishay.com/doc?99912 TO-277A (SMPC) K Anode 1 Case: TO-277A (SMPC) •TYPICAL Material categorization: For definitions of compliance APPLICATIONS IF(AV) 10 K Anode • Material categorization: For definitions of Acompliance Cathode Anode 1 2 Molding compound meets UL 94 V-0 flammability rating TYPICAL APPLICATIONS please see www.vishay.com/doc?99912 K Anode 1 TO-277A (SMPC) DC/DC converters, Ultra V at I = 5 A TO-277A (SMPC) For use in low voltage high frequency please see www.vishay.com/doc?99912 Cathode Anode 2 F VRRM 50 V Low VF = 0.26Base TYPICAL APPLICATIONS P/N-M3 - halogen-free, RoHS-compliant, and Cathode Anode 2 For use in lowand voltage high frequency DC/DC converters, freewheeling, polarity protection applications. 180 A IFSM commercial grade K high frequency Anode 1 K Anode 1 For use in lowand voltage DC/DC converters, freewheeling, polarity protection applications. FEATURES TYPICAL APPLICATIONS at IF = 10 ACathode 0.40 V TYPICALVFAPPLICATIONS Cathode 2 freewheeling, Matte and polarity applications. Anode 2 tin protection plated Anode leads, solderable per Terminals: •MECHANICAL Very -DATA typical height of 1.1 mm For uselow in profile low high frequency DC/DC converters, ® TJ max. 150 °Cconverters, ForPRIMARY use in low voltage frequency DC/DC J-STD-002 and voltage JESD 22-B102 TMBS®higheSMP Series CHARACTERISTICS - V10PN50 MECHANICAL DATA freewheeling, and polarity applications. •M3 Ideal formeets automated placement Case: TO-277A (SMPC) freewheeling, and polarity protection applications. suffix JESD 201protection class 1A whisker test PRIMARY MECHANICAL DATA I CHARACTERISTICS - V10PN50 10 A Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating PRIMARYIF(AV) CHARACTERISTICS - V10PN50 • Trench MOS Schottky technology 10 A F(AV) Case: TO-277A (SMPC) VRRM K 50 V Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - DATA halogen-free, RoHS-compliant, and I 10 A •MECHANICAL Low forward voltage drop, UL low 94 power losses MECHANICAL DATA VIF(AV) 50 VA Molding compound meets V-0 flammability RRM PRIMARY CHARACTERISTICS - V15PN50rating PRIMARY CHARACTERISTICS - 180 V10PN50 Base P/N-M3 - halogen-free, RoHS-compliant, and MAXIMUM RATINGS - V10PN50 (TAV = 25 °C unless otherwise noted) commercial grade VFSM 50 Case: (SMPC) RRM Base P/N-M3 - halogen-free, RoHS-compliant, and •commercial High TO-277A efficiency operation 180 Case: TO-277A (SMPC) grade IMatte 15 A 10 AAV IFSM 0.40 VF atIIF(AV) F(AV) F = 10 A PARAMETER SYMBOL UNITrating Terminals: tinV10PN50 plated solderable per Molding compound meets UL 94 leads, V-0 flammability 180 A IFSM commercial grade 1 Molding compound meets UL 94 V-0 flammability rating I = 10 A 0.40 V VF at • Meets MSL level 1, per J-STD-020, LF maximum peak of F VMatte 50 V 50 V TVRRM max. 150 °C Terminals: tin plated leads, solderable per RRM J-STD-002 and JESD 22-B102 Base P/N-M3 - halogen-free, RoHS-compliant, and 10halogen-free, A 0.40 V VF atJIF =-code Device marking 10N5 Base P/N-M3 RoHS-compliant, and Terminals: Matte tin plated leads, solderable per 260 °C TJIFSM max. °C 2 150 J-STD-002 and JESD 22-B102 200 A IFSMJESD 201 class 1A whisker 180 A M3 suffix meets test commercial grade commercial grade TJ max. peak reverse voltage 150 °C J-STD-002 and JESD 22-B102 Maximum VRRM 50 V suffixVmeets 201 class 1A whisker test •M3 Material For definitions of at Matte IF =JESD 15 A tin 0.41 Vcompliance at IF = 10 A 0.40 V VF repetitive F categorization: Terminals: plated leads, solderable per M3 suffix meets JESD 201 class 1A whisker test Terminals: Matte tin plated leads, solderable per (1) please see www.vishay.com/doc?99912 10 I T max. 150 °C F TJ max. TO-277A (SMPC) 150 °C J J-STD-002 and JESD 22-B102 A Maximum average forward rectified current (fig. 1) J-STD-002 and JESD 22-B102 MAXIMUM RATINGS - V10PN50 (TA = 25 °C unless otherwise noted) (2) M3IFsuffix meets JESD 201 5.3 class 1A whisker test M3MAXIMUM suffix meets JESD 201 class 1A whisker (T test = 25 °C unless otherwise RATINGS - V10PN50 noted) FEATURES 50 V High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 180 A 0.40 V 150 °C range B r pad area Revision 18-Dec-12 sine-wave A PARAMETER SYMBOL V10PN50 UNIT TYPICAL APPLICATIONS MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) 35 V Maximum DC reverse voltage - V10PN50 VDC Cathode Anode 2 PARAMETER SYMBOL V10PN50 UNIT Device marking code 10N5 For use in low voltage high frequency DC/DC converters, PARAMETER SYMBOL V10PN50 UNIT Peak forward surge current 10 ms single half sine-wave MAXIMUM RATINGS - V15PN50 (TA = 25A °C unless MAXIMUM RATINGS - V10PN50 (TA = 25 °C unless otherwise noted) IFSM 180 Device markingon code freewheeling, and polarity 10N5 protection applications. otherwise noted) superimposed rated load Maximum repetitive VRRM 50 V Device marking codepeak reverse voltage 10N5 PARAMETER PARAMETER SYMBOL V10PN50 UNIT Maximum peak reverse voltage 50+ 150 V SYMBOL V10PN50 T(1) - 40 to °C Operating repetitive junction and storage temperature range UNIT TJVI,FRRM 10 STG Maximum repetitive peak reverse voltage V 50 V RRM marking code A Maximum average forward rectified current (fig. 1) Device Device marking code MECHANICAL DATA 10N5 10 IIF (1) (2) 10N5 5.3 F (1) Notes PRIMARY CHARACTERISTICS V15PN50 A Maximum average forward rectified current -(fig. 1) 10 I F (2) Case: (SMPC) IFRRMTO-277A 5.3 Maximum repetitive peak reverse repetitive peak voltage V 50 V (1) Maximum A average forward rectified current (fig. Mounted DC onIF(AV) 30 mm xvoltage 30 reverse mm 2 oz. pad PCB 35 voltage V Maximum reverse VRRM 50 V (2) 15 1) A IVFDC Molding compound meets5.3 UL 94 V-0 flammabilityV rating (2) Maximum (1) Free air, mounted on recommended copper pad area 35 DC reverse voltage V 10 I DC F (1) V 50 V 10 IFPeak RRM forward surge current 10 ms single half sine-wave Maximum average rectified current (fig. 1) A Maximum DC average forward rectified current (fig. 1) Base P/N-M3 - forward halogen-free, RoHS-compliant, 35 V and reverse voltage DC IIVFSM 180 A (2) A 5.3 F superimposed on rated load (2) forward surge current 10 ms single half 200 sine-wave A IFSM IFPeak 5.3 commercial grade IFSM 180 A Peak forward surge current 10 ms single half sine-wave superimposed on ratedvoltage load DC reverse voltage 35+ 150 V Maximum DC IV 180 A DC IF reverse = A storage 0.41 V VF at ,FSM T - 40 plated to °C junction and TJMaximum 35 temperature range V VOperating STG Terminals: Matte tin leads, solderable per superimposed on15 rated load DC , T 40 to + 150 °C Operating junction and storage temperature range T J STG T max. 150 °C Peak forward surge current 10 ms single half sine-wave Peak forward J surge current 10 ms single half sine-wave J-STD-002 and JESD 22-B102 Notes A TSTG -load 40 180 to + 150 °C junction and storage TJI,FSM I Operating 180 temperature range A rated201 superimposed on rated load M3superimposed suffix meetson JESD class 1A whisker test (1)FSM Notes Mounted on 30 mm x 30 mm 2 oz. pad PCB Notes: (1) Mounted on 30 mm x 30 mm 2 oz. pad PCB (2) Free air, mounted on recommended copper pad area Notes (1) (2) Operating junction and -storage range , TSTG 40 to + temperature 150 °C junction and storage2temperature TJOperating Mounted on 30 mm 30 oz. pad PCBrange Free air, mounted onx-recommended copper pad area°C 40 mm to + 150 T(2) J, TMounted STG (1) on 30 mm 30 mm 2 oz. pad PCB pad area Free air, mounted onxrecommended copper (2) Notes Notes Free air, mounted on recommended copper pad MAXIMUM RATINGS - V15PN50 (TA area = 25 °C unless otherwise noted) (1) Mounted on 30 mm x 30 mm 2 oz. pad PCB (1) Mounted on 30 mm x 30 mm 2 oz. pad PCB SYMBOL V15PN50 UNIT (2) Free air, mounted on recommended (2)PARAMETER copper pad area Free air, mounted on recommended copper pad area Device marking code 15N5 Revision: 18-Dec-12 Document Number: 89965 1 K 0 (TA = 25 °C unless fig. 1) 2 eSMP® Series eSMP Series V15PN50 V10PN50 10 A TMBS® TMBS Anode 1 FEAT • Very • Ideal • Tren • Low • High • Meet 260 ° • Mate pleas TYPIC For us freewh MECH Case: Moldin Base comme Termin J-STDM3 suf otherwis SYMBO VRRM IF (1) IF (2) VDC IFSM TJ, TST For technical within your region: [email protected], Maximum repetitivequestions peak reverse voltage [email protected],[email protected] V THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT (1) 15 IF ARErectified SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 A Maximum average forward current (fig. 1) IF (2) 6.0 Maximum DC reverse voltage VDC 35 V Revision: 18-Dec-12 Document Number: 89965 1 Peak forward surge current 10 ms single half sine-wave IFSM 200 A 89965 Revision: 18-Dec-12 Document Number: 1 superimposed on rated load within your region: [email protected], For technical questions [email protected], [email protected] Revision: 18-Dec-12 Document Number: 89965 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE DESCRIBED , TSTG - 40HEREIN to [email protected] + 150AND THIS DOCUMENT °C Operating junction and storage temperature range TJPRODUCTS For DOCUMENT technical questions within your region: [email protected], [email protected], ARE SUBJECT SPECIFIC DISCLAIMERS, FORTH AT www.vishay.com/doc?91000 THIS IS SUBJECT TOTO CHANGE WITHOUT NOTICE.SET THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT Revision: 18-Dec-12 Revision: 18-Dec-12 Document Number: 89965 1 1 Document Number: 89965 Notes:THIS (1) Mounted on 30 IS mm xSUBJECT 30 mmTO 2 oz. pad PCB (2) Free air, mounted on recommended copper pad area AND THIS DOCUMENT ARE TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DOCUMENT SUBJECT CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN 1 Notes For questions within your region: [email protected], D For technical questions within your [email protected], [email protected], [email protected] ARE [email protected] SUBJECT TOregion: SPECIFIC DISCLAIMERS, SET FORTH ATtechnical www.vishay.com/doc?91000 (1) Mounted ion: [email protected], [email protected], on 30 mm x 30 mm 2 oz. pad PCB THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROD THIS IS SUBJECT TO CHANGE WITHOUT NOTICE. DESCRIBED HEREIN AND THIS VMN-PT0378-1308 DOCUMENT PRODUCT SHEET 2/2 THE PRODUCTS Free air, DOCUMENT mounted on recommended pad area NGE WITHOUT NOTICE. THE(2)PRODUCTS DESCRIBED HEREIN ANDcopper THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000