BSC042N03S OptiMOS®2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS(on),max 4.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel • Logic level P-TDSON-8 • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • dv /dt rated Type Package Ordering Code Marking BSC042N03S P-TDSON-8 Q67042-S4220 42N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 50 T C=100 °C 50 T A=25 °C, R thJA=45 K/W 2) I D,pulse T C=25 °C3) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 280 Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature T j, T stg Rev. 1.2 mJ kV/µs ±20 V 62.5 W 2.8 -55 ... 150 IEC climatic category; DIN IEC 68-1 A 20 Pulsed drain current T C=25 °C Unit °C 55/150/56 page 1 2004-04-13 BSC042N03S Parameter Values Symbol Conditions Unit min. typ. max. - - 2 minimal footprint - - 62 6 cm2 cooling area2) - - 45 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 5.2 6.5 mΩ V GS=10 V, I D=50 A - 3.5 4.2 - 0.9 - Ω 49 98 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=50 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 Rev. 1.2 page 2 2004-04-13 BSC042N03S Parameter Values Symbol Conditions Unit min. typ. max. - 2750 3660 - 980 1300 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 130 195 Turn-on delay time t d(on) - 6.8 10 Rise time tr - 5.8 8.7 Turn-off delay time t d(off) - 27 41 Fall time tf - 4.6 6.9 Gate to source charge Q gs - 8.3 11 Gate charge at threshold Q g(th) - 4.4 5.9 Gate to drain charge Q gd - 5.3 8.0 Switching charge Q sw - 9.2 13 Gate charge total Qg - 21 28 Gate plateau voltage V plateau - 3.0 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 19 25 Output charge Q oss V DD=15 V, V GS=0 V - 23 31 - - 50 - - 200 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω pF ns Gate Charge Characteristics4) V DD=15 V, I D=25 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.85 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 12 nC 4) T C=25 °C A See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2004-04-13 BSC042N03S 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 70 60 60 50 40 I D [A] P tot [W] 40 30 20 20 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 T C [°C] 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 1000 101 10 100 1 limited by on-state resistance 1 µs 10 µs 102 0.5 0.2 100 0.1 Z thJC [K/W] I D [A] 100 µs 10-1 DC 1 ms 0.05 0.1 0.02 0.01 1 10 10 10 ms 100 1 0.1 1 -1 10 Rev. 1.2 10 0 10 100 1 V DS [V] 10 10-2 0.01 10-3 0.001 2 10 page 4 single pulse 0 0 -6 10 0 -5 10 0 -4 10 0 -3 t p [s] 10 0 -2 10 10-1 2004-04-13 BSC042N03S 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 10 V 25 4.5 V 140 4V 3.7 V 3.4 V 3.2 V 3V 20 120 2.8 V R DS(on) [mΩ] I D [A] 100 3.7 V 80 60 15 10 3.4 V 4V 40 3.2 V 4.5 V 5 10 V 3V 20 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 120 140 100 120 80 g fs [S] I D [A] 100 80 60 60 40 40 20 25 °C 150 °C 20 0 0 0 1 2 3 4 5 10 20 30 40 50 60 I D [A] V GS [V] Rev. 1.2 0 page 5 2004-04-13 BSC042N03S 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 7 2.5 6 2 5 R DS(on) [mΩ] 98 % 500 µA V GS(th) [V] 4 typ 3 1.5 50 µA 1 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 150 °C 102 25 °C 150°C, 98% 25°C, 98% Ciss 103 I F [A] C [pF] 101 Coss 1000 100 10-1 Crss 102 10-2 100 0 10 20 30 0.4 0.8 1.2 1.6 V SD [V] V DS [V] Rev. 1.2 0 page 6 2004-04-13 BSC042N03S 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD 100 12 125 °C 100 °C 15 V 10 25 °C 6V 24 V V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 50 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V] 30 28 V g s(th) 26 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.2 page 7 2004-04-13 BSC042N03S Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.2 page 8 2004-04-13 BSC042N03S Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 1.2 page 9 2004-04-13 BSC042N03S Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 10 2004-04-13