IPD09N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS(on) 8.9 mΩ • Low On-Resistance R DS(on) ID 30 A • Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Type IPD09N03L Package Ordering Code P- TO252 -3-11 Q67042-S4110 Marking 09N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A TC=25°C 30 TC=100°C 30 ID puls 120 EAS 150 Repetitive avalanche energy, limited by Tjmax 2) EAR 10 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 100 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=30A, V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-01-17 IPD09N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID = 50 µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 10.6 13.6 mΩ RDS(on) - 7.2 8.9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30A 1Current limited by bondwire ; with an R thJC = 1.5K/W the chip is able to carry ID= 83A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-17 IPD09N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 23.8 47.5 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1160 Output capacitance Coss f=1MHz - 450 600 Reverse transfer capacitance Crss - 120 175 Gate resistance RG - 1.5 - Ω Turn-on delay time td(on) VDD =15V, VGS =10V, - 7.4 11.1 ns Rise time tr ID =15A, 13 20 Turn-off delay time td(off) RG =5.4Ω - 28.4 42.6 Fall time tf - 7.6 11.4 Gate Charge Characteristics Gate to source charge Qgs - 3 4 Gate to drain charge Qgd - 9.2 12.5 Gate charge total Qg - 18.2 24.2 - 16.5 21.9 nC V(plateau) VDD =15V, ID =15A - 2.7 - V IS - - 30 A - - 120 VDD =15V, ID =15A VDD =15V, ID =15A, 1550 pF nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =15A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=30A - 0.9 1.2 V Reverse recovery time trr V R=-V, IF=lS, - 31 39 ns Reverse recovery charge Qrr diF/dt=100A/µs - 29 37 nC Page 3 2002-01-17 IPD09N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 10 V IPD09N03L 110 IPD09N03L 32 W A 90 24 70 ID P tot 80 20 60 16 50 12 40 30 8 20 4 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 IPD09N03L 10 1 IPD09N03L K/W A /I D 10 Z thJC DS t = 10.0µs p = V 2 10 -1 10 -2 R DS (on ) ID 10 0 100 µs D = 0.50 10 0.20 1 0.10 1 ms 0.05 single pulse 10 ms 10 0.02 -3 0.01 DC 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-01-17 IPD09N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: VGS IPD09N03L 75 IPD09N03L 30 Ptot = 100W A mΩ b 60 55 c ID 50 45 3.0 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 c 24 R DS(on) V [V] GS a fe d 22 20 18 40 16 35 14 30 12 b 25 20 8 15 6 10 d 10 e f 4 VGS [V] = a 5 b 3.5 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V c 4.0 d 4.5 e 5.0 f 5.5 0 5 0 10 20 30 40 A 8 Typ. forward transconductance ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 60 60 A S 50 50 45 45 40 40 g fs ID 7 Typ. transfer characteristics 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 60 ID VDS 0 V 5 V GS 0 10 20 30 40 A 60 ID Page 5 2002-01-17 IPD09N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 30 A, VGS = 10 V parameter: VGS = VDS IPD09N03L 20 2.5 mΩ V 500µA V GS(th) R DS(on) 16 14 12 1.5 98% 10 50µA 8 1 typ 6 4 0.5 2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 IPD09N03L A pF 2 10 1 IF C Ciss 10 10 3 C oss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) Crss 10 T j = 175 °C (98%) 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-01-17 IPD09N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage E AS = f (T j) V(BR)DSS = f (Tj) par.: I D = 30 A, V DD = 25 V, R GS = 25 Ω parameter: ID=10 mA 36 160 V V(BR)DSS mJ 120 E AS IPD09N03L 100 34 33 32 80 31 60 30 40 29 20 28 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C 200 Tj 14 Typ. gate charge VGS = f (QGate) parameter: ID = 15 A pulsed IPD09N03L 16 V VGS 12 10 8 6 0.2 VDS max 4 0.5 VDS max 2 0.8 VDS max 0 0 10 20 30 40 nC 55 QGate Page 7 2002-01-17 IPD09N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-17