SPD06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances PG-TO252 • Extreme dv /dt rated • Improved transconductance Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 6.2 T C=100 °C 3.9 Pulsed drain current1) I D,pulse T C=25 °C 18.6 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 200 Avalanche energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt Gate source voltage Unit A mJ 6.2 A I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T C=25 °C 74 W Operating and storage temperature T j, T stg -55 ... 150 °C Reverse diode dv/dt 7) dv/dt 15 Rev. 1.5 Page 1 V/ns 2008-04-11 SPD06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 1.7 SMD version, device on PCB, minimal footprint - - 75 SMD version, device on PCB, 6 cm2 cooling area3) - 50 - 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V - 700 - Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature *) T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=600 V, V GS=0 V, T j=150 °C - - 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=3.9 A, T j=25 °C - 0.68 0.75 Ω V GS=10 V, I D=3.9 A, T j=150 °C - 1.82 - Gate resistance RG f =1 MHz, open drain - 1 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=3.9 A - 5.6 - S *) reflow soldering, MSL3 Rev. 1.5 Page 2 2008-04-11 SPDT06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 620 - - 200 - - 17 - - 28 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related4) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related5) C o(tr) - 47 - Turn-on delay time t d(on) - 7 - Rise time tr - 12 - Turn-off delay time t d(off) - 52 - Fall time tf - 10 - Gate to source charge Q gs - 3.3 - Gate to drain charge Q gd - 12 - Gate charge total Qg - 24 31 Gate plateau voltage V plateau - 5.5 - V DD=480 V, V GS=10 V, I D=6.2 A, R G=12 Ω ns Gate Charge Characteristics V DD=480 V, I D=6.2 A, V GS=0 to 10 V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. nC V 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 7) ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 1.5 Page 3 2008-04-11 SPD06N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 6.2 - - 18.6 - 0.97 1.2 V - 400 - ns - 3.5 - µC - 25 - A Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm T C=25 °C V GS=0 V, I F=6.2 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.0325 R th2 Value Unit typ. K/W C th1 0.0000502 0.0448 C th2 0.000303 R th3 0.251 C th3 0.000428 R th4 0.31 C th4 0.00243 R th5 0.231 C th5 0.00344 C th6 0.1986) Ws/K 6) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.5 Page 4 2008-04-11 SPD06N60C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 80 102 limited by on-state resistance 1 µs 60 1 10 10 µs I D [A] P tot [W] 100 µs 40 100 DC 1 ms 10 ms 20 10-1 0 10-2 0 40 80 120 160 100 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 20 20 V 7V 16 100 6.5 V 0.5 6V I D [A] Z thJC [K/W] 12 0.2 0.1 8 -1 10 5.5 V 0.05 0.02 0.01 single pulse 5V 4 4.5 V 4V 10-2 10-6 0 10-5 10-4 10-3 10-2 10-1 100 5 10 15 20 V DS [V] t p [s] Rev. 1.5 0 Page 5 2008-04-11 SPD06N60C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 8 4 6V 20 V 4V 5.5 V 7V 4.5 V 5.5 V 5V 6.5 V 6 3 R DS(on) [Ω] I D [A] 5V 4 6V 20 V 2 4.5 V 2 1 4V 0 0 0 5 10 15 20 0 2 4 V DS [V] 6 8 10 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=3.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 2 25 1.6 20 1.2 15 I D [A] R DS(on) [Ω] 25 °C 98 % 0.8 10 typ 150 °C 0.4 5 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.5 0 2 4 6 8 10 V GS [V] Page 6 2008-04-11 SPD06N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 12 10 25 °C 120 V 25 °C, 98% 480 V 150 °C, 98% 101 8 I F [A] V GS [V] 150 °C 6 100 4 2 10-1 0 0 10 20 0 30 0.5 Q gate [nC] 1 1.5 2 2.5 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=3.1 A; V DD=50 V parameter: T j(start) 250 8 200 6 E AS [mJ] I AV [A] 150 4 125 °C 100 25 °C 2 50 0 0 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 60 100 140 180 T j [°C] t AR [µs] Rev. 1.5 20 Page 7 2008-04-11 SPD06N60C3 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 C [pF] V BR(DSS) [V] 13 Drain-source breakdown voltage 620 Ciss 102 Coss 580 101 540 100 -60 -20 20 60 100 140 180 T j [°C] Crss 0 100 200 300 400 500 V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 5 4 E oss [µJ] 3 2 1 0 0 100 200 300 400 500 600 V DS [V] Rev. 1.5 Page 8 2008-04-11 SPD06N60C3 Definition of diode switching characteristics Rev. 1.5 Page 9 2008-04-11 SPD06N60C3 PG-TO252-3-1: Outline , PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 1.5 Page 10 2008-04-11 SPD06N60C3 Rev. 1.5 Page 11 2008-04-11