SPU07N60S5 SPD07N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251 2 • Extreme dv/dt rated 3 1 1 • Ultra low effective capacitances 2 • Improved transconductance Type Package Ordering Code SPU07N60S5 PG-TO251 Q67040-S4196 Marking 07N60S5 SPD07N60S5 PG-TO252 Q67040-S4186 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 7.3 TC = 100 °C 4.6 Pulsed drain current, tp limited by Tjmax I D puls 14.6 Avalanche energy, single pulse EAS 230 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5 mJ I D = - A, V DD = 50 V I D = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 7.3 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 83 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.5 Page 1 2008-04-10 3 SPU07N60S5 SPD07N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 - - 260 Soldering temperature, *) Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=350µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 100 V GS=20V, VDS=0V - - 100 nA Ω V GS=10V, ID=4.6A, Tj=25°C - 0.54 0.6 Tj=150°C - 1.46 - f=1MHz, open Drain - 19 - *) TO252: reflow soldering, MSL3; TO251: wavesoldering Rev. 2.5 Page 2 2008-04-10 SPU07N60S5 SPD07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 4 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 970 - Output capacitance Coss f=1MHz - 370 - Reverse transfer capacitance Crss - 10 - - 30 - - 55 - Effective output capacitance,3) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance,4) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 120 - Rise time tr ID=7.3A, RG=12Ω - 40 - Turn-off delay time t d(off) - 170 255 Fall time tf - 20 30 - 7.5 - - 16.5 - - 27 35 - 8 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg pF VDD=350V, ID=7.3A VDD=350V, ID=7.3A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=7.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.5 Page 3 2008-04-10 SPU07N60S5 SPD07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 7.3 - - 14.6 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 750 1275 ns Reverse recovery charge Qrr diF/dt=100A/µs - 4.9 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.024 R th2 Cth1 0.00012 0.046 Cth2 0.0004578 R th3 0.085 Cth3 0.000645 R th4 0.308 Cth4 0.001867 R th5 0.317 Cth5 0.004795 R th6 0.112 Cth6 0.045 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2008-04-10 SPU07N60S5 SPD07N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 100 10 2 SPU07N60S5 W A 80 10 1 ID Ptot 70 60 10 0 50 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 40 30 10 -1 20 10 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Typ. output characteristic 4 Typ. output characteristic ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 25 12 20V 20V 12V 10V A A 9V 15 ID ID 12V 10V 8.5V 8 8V 6 9V 10 7.5V 4 7V 8V 5 6.5V 2 6V 7V 0 0 5 10 15 V 25 VDS Rev. 2.5 0 0 5 10 15 V 25 VDS Page 5 2008-04-10 3 SPU07N60S5 SPD07N60S5 5 Typ. drain-source on resistance 6 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V 3 3.4 SPU07N60S5 Ω 2.8 RDS(on) RDS(on) mΩ 2 2 1.6 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1.5 1 0 2.4 2 4 6 8 A 10 1.2 98% 0.8 typ 0.4 0 -60 14 -20 20 60 °C 100 ID 180 Tj 7 Typ. transfer characteristics 8 Typ. gate charge ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 7.3 A pulsed parameter: tp = 10 µs 24 16 SPU07N60S5 A 20 0.2 VDS max 18 12 0.8 VDS max 16 14 VGS ID V 25 °C 150 °C 12 10 8 10 6 8 6 4 4 2 2 0 0 4 8 12 V 20 4 8 12 16 20 24 28 32 nC 38 Q Gate VGS Rev. 2.5 0 0 Page 6 2008-04-10 SPU07N60S5 SPD07N60S5 9 Forward characteristics of body diode 10 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 2 SPU07N60S5 10 8 A A 6 IAR IF 10 1 5 T j(START) =25°C 4 3 10 0 T j(START) =125°C Tj = 25 °C typ 2 Tj = 150 °C typ Tj = 25 °C (98%) 1 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR VSD 11 Avalanche energy 12 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = - A, VDD = 50 V 260 720 mJ SPU07N60S5 V 220 V(BR)DSS EAS 200 180 160 680 660 640 140 120 620 100 600 80 60 580 40 560 20 0 20 40 60 80 100 120 °C 160 Tj Rev. 2.5 540 -60 -20 20 60 100 °C 180 Tj Page 7 2008-04-10 SPU07N60S5 SPD07N60S5 13 Avalanche power losses 14 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz 10 4 300 pF W Ciss 200 C PAR 10 3 10 2 150 Coss 100 10 1 Crss 50 0 4 10 10 5 MHz 10 6 10 0 0 100 200 300 400 V 600 VDS f 15 Typ. Coss stored energy Eoss=f(VDS) 5.5 µJ 4.5 Eoss 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.5 Page 8 2008-04-10 SPU07N60S5 SPD07N60S5 Definition of diodes switching characteristics Rev. 2.5 Page 9 2008-04-10 SPU07N60S5 SPD07N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 2008-04-10 SPU07N60S5 SPD07N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 11 2008-04-10 SPU07N60S5 SPD07N60S5 Rev. 2.5 Page 12 2008-04-10