SPI11N60CFD Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge Type Package Pb-free Marking SPI11N60CFD PG-TO262 Yes 11N60CFD Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A T C = 25 °C 11 T C = 100 °C 7 Pulsed drain current, t p limited by T jmax ID puls 28 Avalanche energy, single pulse EAS 340 Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 11 A, V DD = 50 V 0.6 Avalanche current, repetitive t AR limited by T jmax IAR 11 A Reverse diode dv/dt dv/dt 40 V/ns Gate source voltage VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID = 5.5 A, V DD = 50 V IS=11A, V DS=480V, T j=125°C Rev. 2.6 Page 1 V 2009-04-24 SPI11N60CFD Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 80 V/ns di F/dt 600 A/µs Values Unit V DS = 480 V, ID = 11 A, Tj = 125 °C Maximum diode commutation speed V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering T sold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 600 - - Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=0.25mA Drain-Source avalanche V (BR)DS V GS=0V, I D=11A - 700 - Gate threshold voltage V GS(th) ID=500µΑ, V GS=V DS 3 4 5 Zero gate voltage drain current IDSS V DS=600V, V GS=0V, V breakdown voltage Tj=25°C, - 1.1 - Tj=150°C - 900 - - - 100 Gate-source leakage current IGSS V GS=20V, V DS=0V Drain-source on-state resistance RDS(on) V GS=10V, I D=7A, Gate input resistance Rev. 2.6 RG µA Ω Tj=25°C - 0.38 0.44 Tj=150°C - 1.02 - f=1MHz, open Drain - 0.86 - Page 2 nA 2009-04-24 SPI11N60CFD Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 8.3 - S pF ID=7A Input capacitance Ciss V GS=0V, VDS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,2) Co(er) - 45 - - 85 - energy related Effective output capacitance,3) V GS=0V, pF V DS=0V to 480V Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 34 - Rise time tr ID=11A, RG=6.8Ω - 18 - Turn-off delay time td(off) - 43 - Fall time tf - 7 - - 9 - - 23 - - 48 64 - 7 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, I D=11A V DD=480V, I D=11A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, I D=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS. Rev. 2.6 Page 3 2009-04-24 SPI11N60CFD Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 11 - - 28 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage V SD V GS=0V, IF=I S - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , - 140 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 0.7 - µC Peak reverse recovery current Irrm - 11 - A Peak rate of fall of reverse di rr/dt - 1200 - A/µs recovery current Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.015 Rth2 Cth1 0.0001878 0.03 Cth2 0.0007106 Rth3 0.056 Cth3 0.000988 Rth4 0.197 Cth4 0.002791 Rth5 0.216 Cth5 0.007285 Rth6 0.083 Cth6 0.063 Tj K/W R th1 R th,n T case Ws/K External Heatsink P tot (t) C th1 C th2 C th,n T amb Rev. 2.6 Page 4 2009-04-24 SPI11N60CFD 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( VDS ) parameter : D = 0 , TC=25°C SPP11N60CFD 140 2 10 W A 120 110 10 1 10 0 90 ID P tot 100 80 70 60 50 40 10 -1 10 -2 tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms DC 30 20 10 0 0 20 40 60 80 100 120 °C 160 10 0 10 1 10 2 V 10 VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS parameter: D = t p/T 1 10 40 K/W Vgs = 20V Vgs = 10V Vgs = 9V Vgs = 8.5V Vgs = 8V 30 Vgs = 7.5V Vgs = 7V Vgs = 6.5V 25 Vgs = 6V A 10 0 ID ZthJC 10 -1 20 10 10 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse -2 -3 15 10 5 10 -4 10 -7 Rev. 2.6 10 -6 10 -5 10 -4 10 -3 s tp 10 0 -1 0 Page 5 4 8 12 16 20 V 26 VDS 2009-04-24 3 SPI11N60CFD 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, VGS 2 22 Ω Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 8V Vgs = 8.5V Vgs = 20V 1.8 1.7 R DS(on) ID Vgs = 20V A Vgs = 8.5V Vgs = 8V 18 Vgs = 7.5V Vgs = 7V 16 Vgs = 6.5V Vgs = 6V 14 1.6 1.5 12 1.4 10 1.3 1.2 8 1.1 6 1 4 0.9 2 0.8 0 0 4 8 12 16 20 0.7 V 26 V DS 0 4 8 12 16 A 20 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, V GS = 10 V parameter: tp = 10 µs 2.6 28 ID SPP11N60CFD 40 Ω A 2.2 Tj = 25?C 30 1.8 ID R DS(on) 2 1.6 25 Tj = 150?C 1.4 20 1.2 1 15 0.8 0.6 10 98% 0.4 typ 5 0.2 0 -60 -20 20 60 100 0 °C 180 0 Tj Rev. 2.6 Page 6 2 4 6 8 10 12 14 16 V 20 VGS 2009-04-24 SPI11N60CFD 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (V SD) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs SPP11N60CFD 16 10 V A 0.2 VDS max 12 0.8 VDS max 10 10 1 10 0 IF V GS 2 SPP11N60CFD 8 6 T j = 25 °C typ 4 T j = 150 °C typ T j = 25 °C (98%) 2 T j = 150 °C (98%) 10 0 0 10 20 30 40 nC 50 -1 70 0 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (T j) par.: T j ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 Tj(START) =25°C 150 4 3 100 Tj(START) =125°C 2 50 1 0 -3 10 Rev. 2.6 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 0 20 4 40 60 80 100 120 °C 160 Tj Page 7 2009-04-24 SPI11N60CFD 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR=0.6mJ SPP11N60CFD 300 720 V 680 P AR V (BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (V DS) Eoss=f(V DS) parameter: VGS=0V, f=1 MHz 10 4 7.5 µJ pF Ciss 10 6 3 C E oss 5.5 10 5 4.5 4 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 0 600 0 V DS Rev. 2.6 100 200 300 400 V 600 VDS Page 8 2009-04-24 6 SPI11N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Qrr = f(TJ) parameter: ID = 11A Qrr = f(ID) parameter: di/dt = 100 A/µs 1200 1200 1100 1100 Qrr [nC] Qrr [nC] 1000 1000 Tj = 125°C 900 800 700 900 Tj = 25°C 600 800 500 400 700 300 600 25 50 200 °C 75 125 1 Tj 2 3 4 5 6 7 8 9 A ID 11 19 Typ. reverse recovery charge Qrr = f(di/dt) parameter: ID = 11 A 1600 1500 Tj = 125°C Qrr [nC] 1400 1300 1200 1100 Tj = 25°C 1000 900 800 700 600 100 Rev. 2.6 200 300 400 500 600 700 A/µs 900 di/dt Page 9 2009-04-24 SPI11N60CFD Definition of diodes switching characteristics Rev. 2.6 Page 10 2009-04-24 SPI11N60CFD PG-TO-262-3-1 Rev. 2.6 Page 11 2009-04-24 SPI11N60CFD Rev. 2.6 Page 12 2009-04-24