SPP24N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPP24N60C3 Package Ordering Code PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 24.3 TC = 100 °C 15.4 Pulsed drain current, tp limited by Tjmax I D puls 72.9 Avalanche energy, single pulse EAS 780 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 24.3 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 240 W Operating and storage temperature T j , T stg -55... +150 °C Reverse diode dv/dt 4) dv/dt Rev. 2.5 Page 1 15 V/ns 2009-12-01 SPP24N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 , ID = 24.3 , Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=24.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.5 RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 VGS=20, VDS =0V - - 100 Ω VGS=10V, ID=15.4A, Tj=25°C - 0.14 0.16 Tj=150°C - 0.34 - f=1MHz, open Drain - 0.66 - Page 2 nA 2009-12-01 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 21.5 - S pF ID=15.4A Input capacitance Ciss V GS=0V, V DS=25V, - 3000 - Output capacitance Coss f=1MHz - 1000 - Reverse transfer capacitance Crss - 60 - - 141 - - 224 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 13 - Rise time tr ID=24.3A, R G=3.3Ω - 21 - Turn-off delay time td(off) - 140 - Fall time tf - 14 - - 12.7 - - 45.8 - - 104.9 135 - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480, ID=24.3A VDD=480V, ID=24.3A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=24.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.5 Page 3 2009-12-01 SPP24N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 24.3 - - 72.9 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , - 600 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 13 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse dirr /dt - 1400 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.006524 R th2 Cth1 0.0004439 0.013 Cth2 0.001662 R th3 0.025 Cth3 0.002268 R th4 0.096 Cth4 0.006183 R th5 0.117 Cth5 0.014 R th6 0.053 Cth6 0.104 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2009-12-01 SPP24N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 260 10 2 SPP24N60C3 W A 220 200 10 1 ID Ptot 180 160 140 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 120 100 80 10 -1 60 40 20 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 0 100 Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 80 Vgs = 6V Vgs = 5.5V 70 Vgs = 5V Vgs = 4.5V 60 Vgs = 4V A K/W ID ZthJC 10 -1 10 -2 50 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 40 30 20 10 10 -4 -7 10 Rev. 2.5 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 4 8 12 16 20 26 V VDS 2009-12-01 3 SPP24N60C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 50 1 Vgs = 20V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 40 Vgs = 5V Vgs = 4.5V 35 Vgs = 4V Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V Ω RDS(on) ID A 30 25 0.8 0.7 0.6 20 0.5 15 0.4 10 0.3 5 0 0 4 8 12 16 20 0.2 0 26 V VDS 5 10 15 20 25 30 35 40 A 50 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 15.4 A, VGS = 10 V parameter: tp = 10 µs 100 Ω A 0.8 80 0.7 70 ID RDS(on) 1 SPP24N60C3 0.6 60 0.5 50 0.4 40 0.3 30 98% 0.2 Tj = 25°C Tj = 150°C 20 typ 0.1 0 -60 10 -20 20 60 100 °C 180 Tj Rev. 2.5 Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2009-12-01 SPP24N60C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 24.3 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP24N60C3 V SPP24N60C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 10 -1 0 140 nC 170 120 0.4 0.8 1.2 1.6 2 2.4 V QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 28 0.9 mJ A 0.7 IAR EAS 20 16 0.6 0.5 Tj(START)=25°C 12 0.4 0.3 8 Tj(START)=125°C 0.2 4 0 -3 10 Rev. 2.5 0.1 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 25 50 75 100 °C 150 Tj 2009-12-01 SPP24N60C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=1mJ 720 SPP24N60C3 1000 V 680 PAR V(BR)DSS W 660 600 640 620 400 600 580 200 560 540 -60 -20 20 60 100 °C 0 3 10 180 10 4 5 10 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 28 pF Ciss Coss Crss 10 4 µJ Eoss C 20 10 3 16 12 10 2 8 10 1 4 10 0 0 100 200 300 400 V 600 VDS Rev. 2.5 0 0 100 200 300 400 V 600 VDS Page 8 2009-12-01 6 SPP24N60C3 Definition of diodes switching characteristics Rev. 2.5 Page 9 2009-12-01 SPP24N60C3 PG-TO-220-3-1 Rev. 2.5 Page 10 2009-12-01 SPP24N60C3 Rev. 2.5 Page 11 2009-12-01