IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Applications: • Inductive Cooking • Soft Switching Applications VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 25A 1.6V 175°C H25R1202 PG-TO-247-3 Type IHW25N120R2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 75 Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 75 Diode forward current IF A 50 25 TC = 25°C 50 TC = 100°C 25 Diode pulsed current, tp limited by Tjmax IFpuls Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM Gate-emitter voltage VGE Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) 75 50 130 120 ±20 V ±25 365 W Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Power dissipation TC = 25°C Ptot Operating junction temperature 1 260 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.41 K/W RthJCD 0.41 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 25A T j = 25° C - 1.6 1.8 T j = 15 0° C - 1.95 - T j = 17 5° C - 2.0 - T j = 25° C - 1.5 1.75 T j = 15 0° C - 1.75 - T j = 17 5° C - 1.8 - 5.1 5.8 6.4 V G E = 0V, I F = 2 5 A Gate-emitter threshold voltage VGE(th) I C = 0. 58 mA, VCE=VGE Zero gate voltage collector current ICES V C E = 1200V , V G E = 0V µA T j = 25° C - - 4 T j = 17 5° C - - 2500 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 25A - 16.3 - S Integrated gate resistor RGint Power Semiconductors none 2 Rev. 2.3 Ω Nov. 09 IHW25N120R2 Soft Switching Series Dynamic Characteristic Input capacitance Ciss V C E = 25V, - 2342 - Output capacitance Coss V G E = 0V, - 68.7 - Reverse transfer capacitance Crss f= 1 M Hz - 55.5 - Gate charge QGate V C C = 9 60V, I C = 25A - 60.7 - nC - 13 - nH pF V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 324 - - 55.8 - - - - Unit IGBT Characteristic Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 1.59 - Total switching energy Ets - 1.59 - T j = 25° C, V C C = 6 00V, I C = 25A V G E = 0 / 1 5V, R G = 1 0Ω , ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 373 - Unit IGBT Characteristic Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Total switching energy Power Semiconductors T j = 17 5° C V C C = 6 00V, I C = 25A, V G E = 0 / 15 V, R G = 10Ω, - 90.6 - - - - Eoff - 2.54 - Ets - 2.54 - 3 Rev. 2.3 ns mJ Nov. 09 IHW25N120R2 Soft Switching Series tp=1µs 10µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A TC=110°C 40A Ic 20A 20µs 10A 50µs 500µs 1A 5ms 0A 10Hz DC 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 10Ω) 100V 1000V 50A 350W IC, COLLECTOR CURRENT 300W Ptot, DISSIPATED POWER 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 250W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) 4 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series 70A 70A 15V 15V 50A 13V 11V 40A 9V 7V 30A 20A 50A 13V 11V 40A 9V 7V 30A 20A 10A 10A 0A 0A 0V 1V 0V 2V 70A 60A 50A 40A 30A TJ=175°C 20A 25°C 10A 0A 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=20V 60A VGE=20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A IC=50A 2.5V 2.0V IC=25A 1.5V IC=12.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE =15V) 5 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series td(off) 1000ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf 100ns 10ns 0A 10A 20A 30A 40A 50A 60A tf 10Ω 70A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=10Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) tf 100ns 10ns 25°C VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 50°C 75°C 100°C 125°C max. 5V typ. 4V min. 3V 2V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors 6V 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.6mA) 6 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series 4.0mJ Eoff 5.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 6.0mJ Eoff 4.0mJ 3.0mJ 2.0mJ 1.0mJ 2.0mJ 1.0mJ 0.0mJ 0.0mJ 0A 10A 20A 30A 40A 50A 60A 10Ω 70A IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=10Ω, Dynamic test circuit in Figure E) 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) Eoff E, SWITCHING ENERGY LOSSES 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25°C 20Ω Eoff 2.5mJ E, SWITCHING ENERGY LOSSES 3.0mJ 50°C 75°C 1.5mJ 1.0mJ 0.5mJ 0.0mJ 600V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=10Ω, Dynamic test circuit in Figure E) Power Semiconductors 2.0mJ 650V 700V 750V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=20A, RG=10Ω, Dynamic test circuit in Figure E) 7 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series Ciss 240V 1nF 960V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V 10V 5V 0V 100pF Coss Crss 0nC 25nC 50nC 75nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A) ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE -1 0.2 0.1 0.05 R,(K/W) 0.0183 0.1313 0.1358 0.1257 0.02 -2 0.01 10 K/W τ, (s) -2 6.66*10 -2 2.85*10 -3 5.49*10 -4 4.51*10 R1 R2 single pulse C1=τ1/R1 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) D=0.5 10 K/W 10V C2=τ2/R2 D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 R,(K/W) 0.079 0.1708 0.1263 0.035 τ, (s) -2 7.66*10 -2 1.24*10 -4 8.56*10 -5 7.52*10 R1 R2 0.01 C1=τ1/R1 C2=τ2/R2 -2 10 K/W single pulse -3 10 K/W 10µs 100µs 1ms 10ms 10µs 100ms tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T) 8 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series 45A IF=50A 2.0V 35A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 40A 30A 25A TJ=25°C 20A 175°C 15A 10A 25A 1.5V 12.5A 1.0V 0.5V 5A 0A 0.0V 0.5V 1.0V 1.5V 0.0V 2.0V VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature 9 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series PG-TO247-3 Power Semiconductors 10 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tr r tS QS Ir r m tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.3 Nov. 09 IHW25N120R2 Soft Switching Series Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/19/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.3 Nov. 09